200mm 8inch GaN oo ku dul yaal sapphire-lakabka wafer substrate-ka

200mm 8inch GaN oo saaran sapphire Epi-lakabka wafer substrate Sawirka

Sharaxaad Gaaban:

Habka wax soo saarka ayaa ku lug leh koritaanka epitaxial ee lakabka GaN ee substrate Sapphire iyadoo la adeegsanayo farsamooyin horumarsan sida kaydinta uumiga kiimikada ee birta-organic (MOCVD) ama molecular beam epitaxy (MBE). Dhigista waxaa lagu fuliyaa xaaladaha la xakameeyey si loo hubiyo tayada crystal-sare iyo lebbiska filimka.

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Faahfaahinta Alaabta

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hordhaca alaabta

Substrate-ka 8-inji ee GaN-on-Sapphire waa walxo semiconductor tayo sare leh oo ka kooban lakabka Gallium Nitride (GaN) oo koray substrate Sapphire ah. Qalabkani wuxuu bixiyaa sifooyin gaadiid elektaroonik ah oo heer sare ah wuxuuna ku habboon yahay samaynta aaladaha semiconductor ee awoodda sare leh iyo kuwa soo noqnoqda.

Habka wax-soo-saarka

Codsiyada

Substrate-ka 8-inch ee GaN-on-Sapphire wuxuu ka helaa codsiyo ballaaran dhinacyo kala duwan oo ay ku jiraan isgaarsiinta microwave, radarsystems, tignoolajiyada wireless-ka, iyo optoelectronics. Qaar ka mid ah codsiyada caadiga ah waxaa ka mid ah:

1. amplifiers awoodda RF

2. Warshadaha iftiinka LED

3. Aaladaha isgaadhsiinta ee shabakada wireless-ka

4. Qalabka elektarooniga ah ee jawiga heerkulka sare

5. Oqalabka ptoelectronic

Tilmaamaha Alaabta

-Dimension: Cabbirka substrate-ku waa 8 inji (200 mm) dhexroor.

- Tayada dusha sare: Dusha sare ayaa loo qurxiyay si heer sare ah oo siman waxayna soo bandhigaysaa tayada muraayadda u eg.

- Dhumucda: Dhumucda lakabka GaN waa la habeyn karaa iyadoo lagu saleynayo shuruudo gaar ah.

Baakadaha: Substrate-ka waxaa si taxadar leh loogu baakadeeyay walxo liddi ku ah static si looga hortago burbur inta lagu jiro safarka.

Hanuuninta Flat: Substrate-ku waxa uu leeyahay guri hanuunin gaar ah si uu u caawiyo isku toosinta waferka iyo maaraynta inta lagu jiro geeddi-socodyada qalabaynta.

- Halbeegyada kale: Waxyaabaha gaarka ah ee dhumucda, iska caabinta, iyo feejignaanta dopant waxaa loo qaabayn karaa sida shuruudaha macaamiisha.

Iyada oo leh astaamaheeda agabka sare iyo codsiyada kala duwan, 8-inch GaN-on-Sapphire substrate waa doorasho la isku halayn karo oo loogu talagalay horumarinta aaladaha wax-qabadka sare ee semiconductor ee warshadaha kala duwan.

Marka laga reebo GaN-On-Sapphire, waxaan sidoo kale ku bixin karnaa goobta codsiyada qalabka korontada, qoyska alaabta waxaa ku jira 8-inch AlGaN/GaN-on-Si wafers epitaxial iyo 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. Isla mar ahaantaana, waxaan cusboonaysiinnay adeegsiga tikniyoolajiyadeeda sare ee 8-inch GaN ee tignoolajiyada epitaxy ee beerta microwave, waxaanan soo saarnay 8-inji AlGaN/GAN-on-HR Si wafer ah oo iskudarta waxqabadka sare leh cabbir weyn, qiime jaban. oo la jaanqaadi kara habaynta qalabka caadiga ah ee 8-inch. Marka lagu daro gallium nitride-ku-saleysan silikoon, waxaan sidoo kale haysanaa xariiqa wax soo saarka ee AlGaN/GaN-on-SiC wafers epitaxial si loo daboolo baahiyaha macaamiisha silikoon ku salaysan gallium nitride epitaxial.