200mm 8inch GaN oo ku dul taal sapphire Epi-lakab wafer substrate
Soo bandhigida badeecada
Substrate-ka GaN-on-Sapphire ee 8-inji ah waa walax semiconductor tayo sare leh oo ka samaysan lakab Gallium Nitride (GaN) ah oo lagu beeray substrate Sapphire ah. Maaddadani waxay bixisaa sifooyin gaadiid elektaroonik ah oo aad u fiican waxayna ku habboon tahay soo saarista aaladaha semiconductor-ka ee awoodda sare leh iyo kuwa soo noqnoqda sare leh.
Habka Wax Soo Saarka
Habka wax soo saarku wuxuu ku lug leeyahay koritaanka epitaxial ee lakabka GaN ee ku yaal substrate Sapphire iyadoo la adeegsanayo farsamooyin horumarsan sida dhigista uumiga kiimikada birta-dabiiciga ah (MOCVD) ama epitaxy-ka molecular beam epitaxy (MBE). Dhigista waxaa lagu sameeyaa xaalado la xakameeyey si loo hubiyo tayada sare ee kiristaalka iyo isku mid ahaanshaha filimka.
Codsiyada
Substrate-ka GaN-on-Sapphire ee 8-inji ah wuxuu helaa codsiyo ballaaran oo ku saabsan dhinacyo kala duwan oo ay ku jiraan isgaarsiinta microwave-ka, nidaamyada radar-ka, tignoolajiyada wireless-ka, iyo optoelectronics-ka. Qaar ka mid ah codsiyada caadiga ah waxaa ka mid ah:
1. Qalabka kor u qaada awoodda RF
2. Warshadaha nalalka LED-ka
3. Aaladaha isgaarsiinta shabakadda bilaa-waayirka ah
4. Aaladaha elektarooniga ah ee loogu talagalay deegaannada heerkulka sare leh
5. Oaaladaha elektaroonigga ah
Qeexitaannada Badeecada
-Cabbirka: Cabbirka substrate-ka waa 8 inji (200 mm) dhexroor ahaan.
- Tayada Dusha Sare: Dusha sare waxaa loo sifeeyay si siman heer sare ah waxayna muujineysaa tayo aad u fiican oo u eg muraayad.
- Dhumuc: Dhumucda lakabka GaN waxaa loo habeyn karaa iyadoo lagu saleynayo shuruudo gaar ah.
- Baakad: Substrate-ka si taxaddar leh ayaa loogu duubay walxo ka hortag ah si looga hortago waxyeelada inta lagu jiro gaadiidka.
- Jihaynta Fidsan: Substrate-ku wuxuu leeyahay qaab gaar ah oo jiho ah si uu uga caawiyo isku-dubaridka iyo maaraynta wafer-ka inta lagu jiro hababka farsamaynta qalabka.
- Xuduudo kale: Tilmaamaha dhumucda, iska caabinta, iyo fiirsashada daawada waxaa loo habeyn karaa iyadoo loo eegayo shuruudaha macaamiisha.
Iyada oo leh sifooyinkeeda agabka sare iyo codsiyada kala duwan, substrate-ka GaN-on-Sapphire ee 8-inji ah waa doorasho lagu kalsoonaan karo oo loogu talagalay horumarinta aaladaha semiconductor-ka waxqabadka sare leh ee warshadaha kala duwan.
Marka laga reebo GaN-On-Sapphire, waxaan sidoo kale ku bixin karnaa goobta codsiyada qalabka korontada, qoyska wax soo saarka waxaa ka mid ah 8-inch AlGaN/GaN-on-Si epitaxial wafers iyo 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. Isla mar ahaantaana, waxaan cusboonaysiinay adeegsiga tignoolajiyada GaN epitaxy ee horumarsan ee 8-inch ee garoonka microwave-ka, waxaanan horumarinay 8-inch AlGaN/GAN-on-HR Si epitaxy wafer oo isku daraysa waxqabad sare oo leh cabbir weyn, kharash yar iyo la jaan qaada habka caadiga ah ee qalabka 8-inch. Marka lagu daro gallium nitride ee ku salaysan silicon, waxaan sidoo kale haysannaa khad wax soo saar ah oo ah wafers epitaxial AlGaN/GaN-on-SiC si loo daboolo baahiyaha macaamiisha ee agabka epitaxial gallium nitride ee ku salaysan silicon.
Jaantus Faahfaahsan
