2 inji 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Dhumucdiisuna 350um 430um 500um

2 inji 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Dhumucdiisuna 350um 430um 500um Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Sapphire waa walxo isku dhafan oo gaar ah oo ka kooban sifooyin jireed, kiimiko iyo muuqaal ah, kuwaas oo ka dhigaya mid u adkaysta heerkulka sare, shoogga kulaylka, nabaad-guurka biyaha iyo ciidda, iyo xoqidda.

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Astaamaha

Qeexidda jihooyinka kala duwan

Jihaynta	C(0001)-Dhiska		R(1-102)-Dhiska		M(10-10) -Dhidibka	A(11-20)-Dhiska
Hantida jireed	Dhidibka C wuxuu leeyahay iftiin kiristaalo ah, dhidibka kalena wuxuu leeyahay iftiin taban. Diyaaradda C waa mid siman, waxaana la doorbidaa in la jaro.		R-plane wax yar ayay ka adag tahay A.		M plane waa la jaranjaro, ma fududa in la gooyo, si fudud ayaa loo jari karaa.	Adkaanta A-plane waxay si weyn uga sarreysaa tan C-plane, taas oo lagu muujiyo iska caabbinta xirashada, iska caabbinta xoqidda iyo adkaanta sare; Dhinaca A-plane waa diyaarad zigzag ah, oo si fudud loo jari karo;
Codsiyada	Substrates-ka sapphire-ka ee ku saleysan C-da ayaa loo isticmaalaa in lagu beero filimada la keydiyo ee III-V iyo II-VI, sida gallium nitride, kuwaas oo soo saari kara alaabada buluugga ah ee LED-ka, diode-yada laysarka, iyo codsiyada ogaanshaha infrared-ka. Tani waxay ugu horreyn sabab u tahay habka koritaanka kiristaalka safayr ee ku teedsan dhidibka C-ga oo bislaaday, kharashku waa mid hooseeya, sifooyinka jireed iyo kuwa kiimikada ayaa deggan, iyo tiknoolajiyada epitaxy ee ku taal C-plane waa mid bislaaday oo deggan.		Kobaca substrate-ka ee R-oriented ee qaybaha kala duwan ee silicon ee la dhigay, oo loo isticmaalo wareegyada isku dhafan ee microelectronics. Intaa waxaa dheer, wareegyada isku dhafan ee xawaaraha sare leh iyo dareemayaasha cadaadiska ayaa sidoo kale la samayn karaa habka soo saarista filimka koritaanka silikoonka epitaxial. Substrate-ka nooca R-ga ayaa sidoo kale loo isticmaali karaa soo saarista rasaasta, qaybaha kale ee superconducting, iska caabbinta iska caabbinta sare, gallium arsenide.		Waxaa inta badan loo isticmaalaa in lagu beero filimada epitaxial-ka ee aan ahayn kuwa polar/semi-polar GaN si loo hagaajiyo waxtarka iftiinka.	A-ku-saleysan substrate-ka wuxuu soo saaraa ogolaansho/dhexdhexaad isku mid ah, heer sare oo dahaar ah ayaa loo isticmaalaa tignoolajiyada microelectronics-ka isku-dhafan. Superconductors-ka heerkulka sare leh waxaa laga soo saari karaa kiristaalada dhaadheer ee A-base.
Awoodda farsamaynta	Substrate-ka Sapphire-ka Qaabka (PSS): Qaabka Kobaca ama Etching-ka, qaababka qaab-dhismeedka caadiga ah ee nanoscale-ka ayaa loogu talagalay oo laga sameeyaa substrate-ka sapphire-ka si loo xakameeyo qaabka wax soo saarka iftiinka ee LED-ka, loona yareeyo cilladaha kala duwan ee ka dhex jira GaN ee ku koraya substrate-ka sapphire-ka, loo hagaajiyo tayada epitaxy-ga, loona wanaajiyo hufnaanta quantum-ka gudaha ee LED-ka iyo loo kordhiyo hufnaanta soo saarista iftiinka. Intaa waxaa dheer, prism-ka safayr, muraayadda, muraayadda, godka, koonka iyo qaybaha kale ee dhismaha ayaa loo habeyn karaa iyadoo loo eegayo shuruudaha macaamiisha.
Ku dhawaaqida hantida	Cufnaanta	Adkaanta	barta dhalaalaysa	Tusmada Refractive (muuqaalka iyo infrared-ka)	Gudbinta (DSP)	Joogtada Dielectric
Ku dhawaaqida hantida	3.98g/cm3	9 (mohs)	2053℃	1.762~1.770	≥85%	11.58@300K xagasha C (9.4 xagasha A)

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