2 inch 50.8mm Sapphire Wafer C-Diyaarad M-diyaarad R-diyaarad A-diyaarad
Sharaxaada
crystal Sapphire waxaa si weyn loogu isticmaalaa in semiconductor (MOCVD gallium nitride epitaxy substrate), saacadaha, caafimaadka, isgaarsiinta, laser, infrared, elektarooniga ah, qalabka wax lagu qiyaaso, military iyo hawada iyo kuwo kale oo badan oo goynta- gees-goobo beeraha sare. Shirkadeena waxay soo saartaa wafer sapphire sax ah oo leh dhumucdiisuna tahay ≧0.1mm iyo cabbirka dibadda ≧Φ1" muddo dheer la habeeyey, fadlan la xidhiidh shaqaalahayada iibka.
Cabirka: 2inch, 3inch, 4inch, 6inch, 8inch, 12inch
Dhumucda: 100um, 280um, 300um, 350um, 430um, 500um, 650um, 1mm ama kuwa kale
Hanuuninta: C- dhidibka, M- dhidibka, R- dhidibka, A- dhidibka C qalad A ama kuwa kale
Dusha sare: SSP, DSP, shiida
Sharaxaad: Sapphire waa hal crystal oo aluminium ah, kaas oo ah walxaha labaad ee ugu adag dabeecadda, oo ka xiga dheeman. Sapphire waxay leedahay gudbinta iftiinka wanaagsan, xoogga sare, iska caabinta isku dhaca, xirashada caabbinta, iska caabinta daxalka iyo iska caabinta heerkulka sare iyo cadaadiska, biocompatibility, waxaa loo samayn karaa qaabab kala duwan oo walxo ah. Waa agab substrate ku habboon samaynta aaladaha optoelectronic semiconductor.
Codsiga
Sapphire single crystal waa walxo hawlkar badan oo aad u fiican. Waxaa si weyn loogu isticmaali karaa dhinacyo badan sida warshadaha, difaaca iyo cilmi baarista sayniska (sida daaqada infrared heerkulka u adkaysta oo sarreeya). Isla mar ahaantaana, sidoo kale waa maaddada substrate-ka ah ee si weyn loo isticmaalo. Waa substrate-ka la doorbido ee buluuga, guduudan, iftiinka cad ee iftiinka iftiinka (LED) iyo warshadaha buluuga ah (LD) (waxay u baahan yihiin lakabka filimka epitaxy gallium nitride ee substrate sapphire), iyo sidoo kale substrate filim khafiif ah oo heer sare ah. Marka lagu daro soo saarida taxanaha Y-, La-taxane iyo filimo kale oo heerkul sare leh, waxa kale oo loo isticmaali karaa in lagu beero filimaan cusub oo la taaban karo oo MgB2 ah (magnesium diboride).