12 inch Substrate N Nooca SiC Substrate N Nooca Weyn ee Waxqabadka Sare ee Codsiyada RF

12 inji SiC Substrate N Nooca Cabbirka Weyn ee Waxqabadka Sare ee Codsiyada Sawirka leh

Sharaxaad Gaaban:

Substrate-ka 12-inji ee SiC wuxuu ka dhigan yahay horumar la taaban karo oo laga sameeyay teknoolojiyadda agabka semiconductor, oo bixisa faa'iidooyin wax ku ool ah oo loogu talagalay korantada korantada iyo codsiyada soo noqnoqda. Sida qaabka wafer-ka silikoon ee ugu weyn ee ganacsi ahaan loo heli karo, 12-inch substrate SiC waxay awood u siinaysaa dhaqaale aan horay loo arag iyada oo la ilaalinayo faa'iidooyinka maaddada ee sifooyinka faashadda ballaaran iyo guryaha kulaylka ee gaarka ah. Marka la barbar dhigo 6-inch ama waferrada SiC ee ka yar, 12-inji madal waxay bixisaa in ka badan 300% aag la isticmaali karo halkii wafer, taasoo si weyn u kordhinaysa wax-soosaarka dhimista iyo dhimista kharashyada wax soo saarka ee aaladaha korantada. Kala-guurka cabbirkaani wuxuu muraayad u yahay horumarka taariikhiga ah ee wafers silikoon, halkaasoo kororka dhexroor kasta uu keenay hoos u dhac weyn oo kharash ah iyo hagaajinta waxqabadka. 12-inch Substrate SiC substrate's thermal conductivity ka sareeya (ku dhawaad 3× oo ah silikoon) iyo xooga burburka sare ee goobta ayaa ka dhigaya mid qiimo gaar ah u leh nidaamyada gawaarida korantada ee 800V ee soo socda, halkaasoo ay awood u siineyso qaybo awood badan oo is haysta. Kaabayaasha 5G, sheyga xawaaraha sare ee korantada elektaroonigga ah wuxuu u oggolaanayaa aaladaha RF inay ku shaqeeyaan xaddi sare oo khasaare hoose leh. Ku habboonaanta substrate-ka ee qalabka wax soo saarka silikoon ee la beddelay waxa kale oo ay fududaysaa in si fudud loo korsado maryaha jira, in kasta oo maaraynta khaaska ah looga baahan yahay qallafsanaanta xad dhaafka ah ee SiC (9.5 Mohs). Maaddaama mugga wax-soo-saarka uu kordho, 12-inch substrate SiC ayaa la filayaa inuu noqdo heerka warshadaha ee codsiyada awoodda sare leh, wadista hal-abuurka baabuurta, tamarta la cusboonaysiin karo, iyo nidaamyada beddelka awoodda warshadaha.

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Xuduudaha farsamada

12 inch Silicon Carbide (SiC) Tilmaamaha Substrate-ka
Darajo		Wax soo saarka ZeroMPD Darajada (Z Fasalka)	Wax soo saarka caadiga ah Fasalka (P Degree)		Dummy Fasalka (D darajo)
Dhexroorka		3 00 mm ~ 1305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hanuuninta Wafer		Xagasha ka baxsan: 4.0° dhanka <1120>±0.5° ee 4H-N
Cufnaanta Dheef-yar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
iska caabin	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hanuuninta Flat Primary		{10-10} ±5.0°
Dhererka Guriga aasaasiga ah	4H-N	N/A
	4H-SI	Darajo
Ka saarida gees		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare Taarikada Hex By Iftiin Xoogan Sare Meelo Badan Oo Iftiin Xoogan Sare leh Kaarboon Muuqaal ah Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare		Midna Aagga wadarta ≤0.05% Midna Aagga wadarta ≤0.05% Midna			Dhererka isugeynta ≤ 20 mm, hal dherer≤2 mm Aagga isugeynta ≤0.1% Aagga isugeynta≤3% Aagga isugeynta ≤3% Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifyada Iftiinka Xoogga Sare		Midna lama oggola ≥0.2mm ballac iyo qoto dheer			7 waa la oggol yahay, ≤1 mm midkiiba
(TSD) leexashada furka xadhigga		≤500 cm-2		N/A
(BPD) Meesha diyaaradda saldhiga		≤1000 cm-2		N/A
Wasakhda Silikon Dusha Sare ee Iftiinka Xoogan Sare		Midna
Baakadaha		Cassette Multi-wafer ah ama Konteenarka Waferka Keliya
Xusuusin:
1 Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. 2Xaqashada waa in lagu fiiriyaa wajiga Si kaliya. 3 Xogta kala-baxa waxay ka timid oo keliya KOH wafers-ka xardhan.

Astaamaha Muhiimka ah

1. Faa'iidada Cabbirka Weyn: Substrate-ka SiC ee 12-inji ah (12-inch silicon carbide substrate) wuxuu bixiyaa aag hal-wafer ah oo weyn, taasoo awood u siinaysa jajabyo badan in la soo saaro waferkiiba, taaso hoos u dhigaysa qiimaha wax soo saarka iyo kordhinta wax-soosaarka.
2. Qalabka Waxqabadka Sare: Silicon carbide's heerkulka sare ee caabbinta heerkulka sare iyo xoogga sare ee burburka sare ayaa ka dhigaya substrate 12-inch oo ku habboon codsiyada korantada sare iyo kuwa sarreeya, sida rogaha EV iyo nidaamyada degdegga ah.
3. Habayn Wanaagsanaanta: In kasta oo ay adag tahay iyo caqabadaha habaynta ee SiC, 12-inch substrate SiC waxa ay ku gaadhaa ciladaha dusha hoose iyada oo loo marayo farsamooyin goynta iyo turxaan bixinta la wanaajiyey, hagaajinta dhalidda qalabka.
4. Maaraynta Kulaylka Sare: Iyada oo ka fiican kulaylka kulaylka ka badan qalabka silikoon ku salaysan, substrate 12-inch ayaa si wax ku ool ah wax uga qabta kala-baxa kulaylka ee qalabka awoodda sare leh, kordhinta cimriga qalabka.

Codsiyada ugu muhiimsan

1. Gawaarida Korantada: Substrate-ka SiC ee 12-inch (12-inch silicon carbide substrate) waa qayb muhiim ah oo ka mid ah nidaamyada wadista korantada ee jiilka soo socda, taas oo awood u siinaysa wax ku oolnimada sare ee rogoyaasha kuwaas oo kor u qaadaya kala duwanaanta isla markaana yaraynaysa waqtiga dallacaadda.

2. Saldhigyada Saldhigga 5G: Substrate-yada waaweyn ee SiC waxay taageeraan aaladaha RF-sare ee soo noqnoqda, iyagoo buuxinaya shuruudaha saldhigyada 5G ee awoodda sare iyo luminta hoose.

3.Sahayda Korontada Warshadaha: Inverters qoraxda iyo xadhkaha smart, substrate-ka 12-inji wuxuu u adkeysan karaa koronto sare isagoo yareynaya khasaaraha tamarta.

4.Consumer Electronics: Dameeyayaasha mustaqbalka degdega ah iyo sahayda xarumaha xogta ayaa laga yaabaa inay qaataan 12-inch substrates SiC si loo gaaro cabbir isku dhafan iyo hufnaan sare.

Adeegyada XKH

Waxaan ku takhasusnay adeegyada habaynta ee 12-inch SiC substrates (12-inch silicon carbide substrates), oo ay ku jiraan:
1. Dicing & Polishing: Burbur-hooseeya, farsamaynta substrate-ka-sare ee ku habboon shuruudaha macaamiisha, hubinta waxqabadka qalabka xasilloon.
2. Taageerada Kobaca Epitaxial: Adeegyada waferka epitaxial ee tayada sare leh si loo dardargeliyo wax soo saarka chips.
3. Dufcad-yar-yar: Waxay taageertaa ansixinta R&D ee hay'adaha cilmi-baarista iyo shirkadaha, soo gaabinaysa wareegyada horumarinta.
4. La-talinta Farsamada: Xalka-dhamaadka-ilaa-dhamaadka laga bilaabo xulashada alaabta si loo habeeyo hagaajinta, ka caawinta macaamiisha inay ka gudbaan caqabadaha habka SiC.
Hadday tahay wax-soo-saarka guud ama habaynta gaarka ah, adeegyadeenna 12-inch ee SiC substrate waxay la jaanqaadaan baahiyahaaga mashruuca, taasoo xoojinaysa horumarka tignoolajiyada.