100mm 4inch GaN oo ku yaal Sapphire Epi-Layer wafer Gallium nitride epitaxial wafer

(1) Dubi heerkul sare, substrate sapphire ayaa marka hore lagu kululeeyaa 1050 ℃ jawiga hydrogen, ujeedadu waa in la nadiifiyo dusha sare ee substrate;

(2) Marka heerkulku hoos ugu dhaco 510℃, lakabka heerkulka hoose ee GaN/AlN oo leh dhumuc dhan 30nm ayaa lagu shubaa dusha sare ee substrate-ka sapphire;

(3) Heerkulka ayaa kor u kacay ilaa 10 ℃, gaaska falcelinta ammonia, trimethylgallium iyo silane ayaa la isku duraa, siday u kala horreeyaan loo xakameeyo heerka socodka u dhigma, iyo nooca N-silicon-doped GaN ee dhumucda 4um waa la koray;

(4) Gaaska falcelinta ee aluminium trimethyl aluminium iyo trimethyl gallium ayaa loo adeegsaday diyaarinta qaaradaha N-nooca A-Silicon-doped leh dhumucdiisuna tahay 0.15um;

(5) 50nm Zn-doped InGaN waxaa loo diyaariyey iyadoo la isku duro trimethylgallium, trimethylindium, diethylzinc iyo ammonia heerkul ah 8O0℃ iyo xakamaynta heerarka socodka kala duwan siday u kala horreeyaan;

(6) Heerkulka ayaa la kordhiyay ilaa 1020 ℃, trimethylaluminum, trimethylgallium iyo bis (cyclopentadienyl) magnesium ayaa lagu duray si loogu diyaariyo 0.15um Mg doped P-nooca AlGaN iyo 0.5um Mg doped P-nooca G gulukoosta dhiigga;

(7) Tayada sare ee nooca P-nooca GaN Sibuyan filimka waxaa lagu helay by annealing in jawi nitrogen at 700 ℃;

(8) Oogada P-nooca G stasis-ka oogada si loo muujiyo N-nooca G stasis oogada;

(9) Uumi-baxa taarikada xiriirka ee Ni/A ee dusha p-GANI, uumi-baxa