Ku kobcinta lakabka dheeriga ah ee atamka silikoon ee substrate wafer silikoon waxay leedahay faa'iidooyin dhowr ah:
Nidaamyada silikoon ee CMOS, kobaca epitaxial (EPI) ee substrate-ka waferka waa tallaabo geedi socod muhiim ah.
1. Hagaajinta tayada crystal
Cilladaha substrate-ka hore iyo wasakhda: Inta lagu jiro habka wax soo saarka, substrate wafer waxa laga yaabaa inuu leeyahay cillado iyo wasakhyo gaar ah. Koritaanka lakabka epitaxial wuxuu soo saari karaa lakab silikoon monocrystalline oo tayo sare leh oo leh cillado hooseeya iyo wasakhda substrate-ka, taas oo muhiim u ah samaynta qalabka xiga.
Qaab dhismeedka kareemka lebbiska ah: Kobaca Epitaxial wuxuu xaqiijiyaa qaab dhismeed isku mid ah, taasoo yaraynaysa saamaynta xudduudaha hadhuudhka iyo ciladaha maadada substrate-ka, taasoo kor u qaadaysa tayada guud ee kareemada ee maraqa.
2. hagaajinta waxqabadka korontada.
Hagaajinta sifooyinka qalabka: Iyadoo la kordhinayo lakabka epitaxial ee substrate-ka, xoojinta doping-ka iyo nooca silikon si sax ah ayaa loo xakameyn karaa, kor u qaadista waxqabadka korantada ee qalabka. Tusaale ahaan, doping-ka lakabka epitaxial si fiican ayaa loo hagaajin karaa si loo xakameeyo korantada bilowga MOSFETs iyo xuduudaha kale ee korantada.
Yaraynta qulqulka hadda: Lakabka epitaxial ee tayada sare leh ayaa leh cufnaanta cilladda hoose, taas oo ka caawinaysa yaraynta dareeraha hadda jira ee qalabka, taas oo hagaajinaysa waxqabadka qalabka iyo kalsoonida.
3. hagaajinta waxqabadka korontada.
Yaraynta Cabbirka Feature: Nidaamyada habraaca yar yar (sida 7nm, 5nm), cabbirka sifada qalabku wuu sii yaraanayaa, una baahan agab la safeeyey oo tayo sare leh. Tignoolajiyada kobaca Epitaxial waxay buuxin kartaa shuruudahan, iyadoo taageerta wax soo saarka wareegyada isku dhafan ee waxqabadka sare iyo cufnaanta sare.
Kobcinta Korontada Burburinta: Lakabyada Epitaxial waxaa lagu qaabayn karaa koronto jabin sare leh, taas oo muhiim u ah soo saarista aaladaha awooda sare iyo korantada sare. Tusaale ahaan, aaladaha korantada, lakabyada epitaxial waxay wanaajin karaan korantada burburka aaladda, kordhinta baaxadda hawlgalka ee badbaadada leh.
4. Waafaqsanaanta Habka iyo Qaab-dhismeedka Multilayer
Qaab-dhismeedka Multilayer: Tiknoolajiyada kobaca Epitaxial waxay u oggolaanaysaa korriinka qaababka lakabyada badan ee substrates, oo leh lakabyo kala duwan oo leh uruurin iyo noocyo doping oo kala duwan. Tani aad bay faa'iido ugu leedahay soo saarista qalabyada CMOS ee kakan waxayna awood u siinaysaa is-dhexgalka saddex-geesoodka ah.
Waafaqid: Habka kobaca epitaxial wuxuu si aad ah ula jaan qaadayaa hababka wax soo saarka ee CMOS ee hadda jira, taas oo sahlaysa in lagu dhex daro qulqulka shaqada ee wax soo saarka iyada oo aan loo baahnayn wax ka beddel weyn oo lagu sameeyo khadadka habka.
Soo koobid: Codsiga kobaca epitaxial ee hababka silikoon ee CMOS ayaa ugu horayn ujeedadiisu tahay in kor loo qaado tayada wafer-ka, kor u qaadida waxqabadka korantada, taageer qanjidhada geedi socodka horumarsan, iyo buuxinta baahiyaha wax soo saarka wareegga isku dhafan ee cufnaanta sare leh. Tiknoolajiyada kobaca Epitaxial waxay u oggolaaneysaa in si sax ah loo xakameeyo doping-ka walxaha iyo qaab-dhismeedka, hagaajinta waxqabadka guud iyo isku halaynta aaladaha.
Waqtiga boostada: Oct-16-2024