SiC silikon carbideAaladu waxa ay tilmaamaysaa agabka ka samaysan silikoon carbide sida alaabta ceeriin.
Marka loo eego sifooyinka iska caabbinta ee kala duwan, waxay u qaybsan tahay aaladaha korantada ee silikoon carbide iyosilikoon carbide ah oo nus-dahaaran ahQalabka RF.
Foomamka aaladda ugu muhiimsan iyo codsiyada carbide silicon
Faa'iidooyinka ugu muhiimsan ee SiC way dhaaftaySi qalabkawaa:
SiC waxay leedahay farqi u dhexeeya 3 jeer ka Si, kaas oo yarayn kara daadinta oo kordhin karta dulqaadka heerkulka.
SiC waxay leedahay 10 jeer xoogga goobta burburka ee Si, waxay hagaajin kartaa cufnaanta hadda jirta, inta jeer ee hawlgalka, u adkeysiga awoodda korantada waxayna yareyneysaa luminta-off, aad ugu habboon codsiyada korantada sare.
SiC waxay leedahay laba jeer xawaaraha qulqulka qulqulka korantada elektaroonigga ah ee Si, markaa waxay ku shaqayn kartaa soo noqnoqoshada sare.
SiC waxay leedahay 3 jeer heerkulka kulaylka ee Si, waxqabadka kulaylka wanaagsan ee kuleylka, waxay taageeri kartaa cufnaanta awoodda sare waxayna yareyn kartaa shuruudaha kuleylka kuleylka, samaynta qalabka fudud.
Substrate wax qabad
Substrate Conductive: Adiga oo ka saaraya wasakhyada kala duwan ee crystal, gaar ahaan wasakhda heerka gacmeed, si loo gaaro caabbinta sare ee gudaha ee crystal.
WaxqabadSilicon carbide substrateSiC wafer
Qalabka korontada silikoon ee wax-qabadka leh waa iyada oo loo marayo koritaanka lakabka silikoon carbide epitaxial on substrate conductive, xaashida silikoon carbide epitaxial xaashida silikon carbide waa la sii farsameeyaa, oo ay ku jiraan wax soo saarka Schottky diodes, MOSFET, IGBT, iwm, inta badan loo isticmaalo baabuurta korontada, awoodda photovoltaic. jiilka, gaadiidka tareenka, xarunta xogta, dallacaadda iyo kaabayaasha kale. Faa'iidooyinka waxqabadku waa sida soo socota:
Tilmaamaha cadaadiska sare ee la xoojiyay. Burburka xoogga goobta korantada ee silikoon carbide waa in ka badan 10 jeer ka silikoon, taas oo ka dhigaysa iska caabbinta cadaadiska sare ee aaladaha silikoon carbide si aad ah uga sarreeya qalabka silikoon u dhigma.
Sifooyin heerkul sare oo ka wanaagsan. Silikoon carbide waxa uu leeyahay kulaylka ka sareeya silikoon, taas oo ka dhigaysa kulaylka qalabka si fudud iyo xad heerkulka hawlgalka sare. Iska caabbinta heerkulka sare waxay u horseedi kartaa koror weyn oo cufnaanta awoodda, iyadoo la yareynayo shuruudaha nidaamka qaboojinta, si terminalku u noqdo mid fudud oo yar.
Isticmaalka tamarta hoose. ① Qalabka Silicon carbide wuxuu leeyahay iska caabin aad u hooseeya iyo khasaare hoose; (2) Qulqulka hadda jira ee aaladaha silikoon carbide si aad ah ayaa loo dhimay marka loo eego aaladaha silikoon, taas oo hoos u dhigaysa khasaaraha korontada; ③ Ma jirto wax ifafaale ah oo dabada hadda jirta oo ku jirta habka daminta aaladaha silikoon carbide, luminta beddelashaduna waa yar tahay, taas oo aad u wanaajisa inta jeer ee beddelka codsiyada la taaban karo.
Substrate-ka SiC-da-dahaaran: N doping waxaa loo isticmaalaa in si sax ah loo xakameeyo iska caabbinta alaabta wax-qabadka iyadoo la cabbirayo xiriirka u dhigma ee ka dhexeeya xoojinta doping nitrogen, heerka korriinka iyo iska caabbinta crystal.
Waxyaalaha substrate-dahaarka ah oo nadiif ah oo sarreeya
Aaladaha RF-ga ee silikoon-ku-saleysan ee-kaarboon-ku-saleysan waxaa sidoo kale lagu sameeyay kororka gallium nitride epitaxial Layer on substrate silicon carbide substrate si loo diyaariyo xaashida silikoon nitride epitaxial, oo ay ku jiraan HEMT iyo aaladaha kale ee gallium nitride RF, inta badan loo isticmaalo isgaarsiinta 5G, isgaarsiinta gaadiidka, codsiyada difaaca, gudbinta xogta, hawada sare.
Heerka qulqulka korantada ee korantada ee silikoon carbide iyo agabyada gallium nitride waa 2.0 iyo 2.5 jeer silikoon siday u kala horreeyaan, markaa inta jeer ee hawlgalka ee silikoon carbide iyo aaladaha gallium nitride way ka weyn yihiin kuwa aaladaha silikon dhaqameed. Si kastaba ha ahaatee, maaddada gallium nitride waxay leedahay faa'iido darrooyinka iska caabinta kulaylka liidata, halka silikoon carbide uu leeyahay iska caabin kulayl wanaagsan iyo kulaylka kulaylka, kaas oo ka dhigi kara caabbinta kulaylka liidata ee aaladaha gallium nitride, sidaa darteed warshaduhu waxay qaataan silikoon carbide semi-dahaaran sida substrate-ka. , iyo gan epitaxial lakabka ayaa ku koray substrate silikoon carbide si loo soo saaro qalabka RF.
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Waqtiga boostada: Jul-16-2024