Soo koobid kooban oo ku saabsan SiC wafer
Wafers-ka silikoon carbide (SiC)waxay noqdeen kuwa ugu muhiimsan ee loo isticmaalo qalabka elektaroonigga ah ee awoodda sare leh, kuwa soo noqnoqda, iyo kuwa heerkulka sare leh ee ku baahsan qaybaha baabuurta, tamarta la cusboonaysiin karo, iyo kuwa hawada sare. Faylalkayagu waxay daboolayaan noocyada muhiimka ah iyo nidaamyada doping-ka - 4H-N oo lagu dahaadhay nitrogen (4H-N), nus-dabool sare (HPSI), 3C-N oo lagu dahaadhay nitrogen (3C-N), iyo nooca p-type 4H/6H (4H/6H-P) - oo lagu bixiyo saddex darajo oo tayo leh: PRIME (si buuxda loo safeeyey, substrate-ka heerka qalabka), DUMMY (lakab la geliyay ama aan la safayn tijaabooyinka habka), iyo RESEARCH (lakabyada epi ee gaarka ah iyo astaamaha doping-ka ee R&D). Dhexroorka waferku wuxuu u dhexeeyaa 2″, 4″, 6″, 8″, iyo 12″ si ay ugu habboonaadaan labada qalab ee dhaxalka ah iyo dharka casriga ah. Waxaan sidoo kale bixinnaa boules monocrystalline ah iyo kiristaalo abuurka oo si sax ah u jihaysan si ay u taageeraan koritaanka kiristaalka gudaha.
Wafer-keena 4H-N wuxuu leeyahay cufnaan side ah oo u dhaxaysa 1×10¹⁶ ilaa 1×10¹⁹ cm⁻³ iyo iska caabin 0.01–10 Ω·cm, taasoo keenaysa dhaqdhaqaaq elektaroonig ah oo heer sare ah iyo goobo burbur ah oo ka sarreeya 2 MV/cm—ku habboon diode-yada Schottky, MOSFET-yada, iyo JFET-yada. Substrates-ka HPSI waxay dhaafaan 1×10¹² Ω·cm iska caabin leh oo leh cufnaanta micropipe ee ka hooseysa 0.1 cm⁻², taasoo hubinaysa daadashada ugu yar ee aaladaha RF iyo microwave-ka. Cubic 3C-N, oo laga heli karo qaabab 2″ iyo 4″ ah, waxay awood u siinaysaa heteroepitaxy oo ku saabsan silicon waxayna taageertaa codsiyada cusub ee photonic iyo MEMS. Wafer-yada P-nooca ah ee 4H/6H-P, oo lagu dahaadhay aluminium ilaa 1×10¹⁶–5×10¹⁸ cm⁻³, waxay fududeeyaan qaab-dhismeedka qalabka ee is-waafajinta.
Wafer-ka SiC, PRIME waxay maraan nadiifin kiimiko-farsamo ilaa <0.2 nm RMS qallafsanaanta dusha sare, kala duwanaanshaha dhumucda guud ee ka yar 3 µm, iyo qaanso <10 µm. Substrates-ka DUMMY waxay dardar geliyaan tijaabooyinka isu-imaatinka iyo baakadaha, halka wafer-ka RESEARCH uu leeyahay dhumucda lakabka epi-lakabka ah ee 2-30 µm iyo doping gaar ah. Dhammaan alaabada waxaa shahaado ka haysta kala-soocidda X-ray (qalooca ruxaya <30 arcsec) iyo Raman spectroscopy, iyadoo la adeegsanayo tijaabooyin koronto - cabbiraadaha hoolka, sawirka C-V, iyo sawirka micropipe - hubinta u hoggaansanaanta JEDEC iyo SEMI.
Baalal ilaa dhexroor 150 mm ah ayaa lagu beeraa PVT iyo CVD iyadoo cufnaanta kala-baxa ay ka hooseyso 1×10³ cm⁻² iyo tirada dhuumaha yar yar. Kiriilada abuurka waxaa lagu jaraa 0.1° dhidibka c si loo hubiyo korriin la soo saari karo iyo wax-soo-saar sare oo la jarjarayo.
Iyada oo la isku darayo noocyo badan oo kala duwan, noocyada kala duwan ee daawada doping-ka, heerarka tayada, cabbirrada wafer-ka SiC, iyo wax soo saarka boule-ka gudaha iyo abuur-kristaalka, madalkeenna substrate-ka SiC wuxuu fududeeyaa silsiladaha saadka wuxuuna dardar geliyaa horumarinta qalabka baabuurta korontada ku shaqeeya, shabakadaha caqliga badan, iyo codsiyada deegaanka ee adag.
Soo koobid kooban oo ku saabsan SiC wafer
Wafers-ka silikoon carbide (SiC)waxay noqdeen qaybta SiC ee la doorto ee elektarooniga korontada sare, soo noqnoqoshada sare, iyo heerkulka sare ee qaybaha baabuurta, tamarta la cusboonaysiin karo, iyo hawada sare. Faylalkayagu waxay daboolayaan noocyada muhiimka ah iyo qorshayaasha daawada - 4H-N-nitrogen-doped, nus-insulating sare (HPSI), 3C-N-nitrogen-doped (3C-N), iyo nooca p-type 4H/6H (4H/6H-P) - oo lagu bixiyo saddex darajo oo tayo leh: SiC waferPRIME (substrate-ka si buuxda loo safeeyey, oo leh heer qalab), DUMMY (lakab ama aan la safayn tijaabooyinka habka), iyo RESEARCH (lakabyada epi ee gaarka ah iyo astaamaha doping-ka ee R&D). Dhexroorka SiC Wafer wuxuu u dhexeeyaa 2″, 4″, 6″, 8″, iyo 12″ si uu ugu habboonaado qalabka dhaxalka ah iyo dharka casriga ah. Waxaan sidoo kale bixinnaa boules monocrystalline ah iyo kiristaalo abuurka oo si sax ah loogu talagalay si loo taageero koritaanka kiristaalka gudaha.
Wafers-keena 4H-N SiC waxay leeyihiin cufnaan side ah oo u dhaxaysa 1×10¹⁶ ilaa 1×10¹⁹ cm⁻³ iyo iska caabin 0.01–10 Ω·cm, taasoo keenaysa dhaqdhaqaaq elektaroonig ah oo heer sare ah iyo goobo burbur ah oo ka sarreeya 2 MV/cm—ku habboon diode-yada Schottky, MOSFETs, iyo JFETs. Substrates-ka HPSI waxay dhaafaan 1×10¹² Ω·cm iska caabin leh oo leh cufnaanta micropipe ee ka hooseysa 0.1 cm⁻², taasoo hubinaysa daadashada ugu yar ee aaladaha RF iyo microwave-ka. Cubic 3C-N, oo laga heli karo qaabab 2″ iyo 4″ ah, waxay awood u siinaysaa heteroepitaxy oo ku saabsan silicon waxayna taageertaa codsiyada cusub ee photonic iyo MEMS. Wafer SiC nooca P-type 4H/6H-P, oo lagu dahaadhay aluminium ilaa 1×10¹⁶–5×10¹⁸ cm⁻³, waxay fududeeyaan qaab-dhismeedka qalabka ee is-waafajinta.
Wafer-ka SiC ee PRIME waxaa lagu sameeyaa nadiifin kiimiko-farsamo ilaa <0.2 nm RMS qallafsanaanta dusha sare, kala duwanaanshaha dhumucda guud ee ka yar 3 µm, iyo qaanso <10 µm. Substrates-ka DUMMY waxay dardar geliyaan tijaabooyinka isu-imaatinka iyo baakadaha, halka wafer-ka RESEARCH uu leeyahay dhumucda lakabka epi-lakabka ah ee 2-30 µm iyo doping gaar ah. Dhammaan alaabada waxaa shahaado ka haysta kala-soocidda X-ray (qalooca ruxaya <30 arcsec) iyo Raman spectroscopy, iyadoo la adeegsanayo tijaabooyin koronto - cabbiraadaha hoolka, sawirka C-V, iyo sawirka micropipe - hubinta u hoggaansanaanta JEDEC iyo SEMI.
Baalal ilaa dhexroor 150 mm ah ayaa lagu beeraa PVT iyo CVD iyadoo cufnaanta kala-baxa ay ka hooseyso 1×10³ cm⁻² iyo tirada dhuumaha yar yar. Kiriilada abuurka waxaa lagu jaraa 0.1° dhidibka c si loo hubiyo korriin la soo saari karo iyo wax-soo-saar sare oo la jarjarayo.
Iyada oo la isku darayo noocyo badan oo kala duwan, noocyada kala duwan ee daawada doping-ka, heerarka tayada, cabbirrada wafer-ka SiC, iyo wax soo saarka boule-ka gudaha iyo abuur-kristaalka, madalkeenna substrate-ka SiC wuxuu fududeeyaa silsiladaha saadka wuxuuna dardar geliyaa horumarinta qalabka baabuurta korontada ku shaqeeya, shabakadaha caqliga badan, iyo codsiyada deegaanka ee adag.
Sawirka wafer-ka SiC
Xaashida xogta ee wafer-ka SiC nooca 6-inch ah ee 4H-N
| Xaashida xogta ee wafers-ka SiC ee 6-inch ah | ||||
| Halbeegga | Halbeeg-hoosaad | Heerka Z | Darajada P | Darajada D |
| Dhexroorka | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| Dhumucda | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Dhumucda | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Jihaynta Wafer-ka | Dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhidibka saaran: <0001> ±0.5° (4H-SI) | Dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhidibka saaran: <0001> ±0.5° (4H-SI) | Dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhidibka saaran: <0001> ±0.5° (4H-SI) | |
| Cufnaanta Tuubooyinka Yaryar | 4H‑N | ≤ 0.2 cm⁻² | ≤ 2 cm⁻² | ≤ 15 cm⁻² |
| Cufnaanta Tuubooyinka Yaryar | 4H‑SI | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Iska caabin | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Iska caabin | 4H‑SI | ≥ 1 × 10¹⁰ Ω·cm | ≥ 1 × 10⁵ Ω·cm | |
| Jihada Fidsan ee Aasaasiga ah | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Dhererka Fidsan ee Aasaasiga ah | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Dhererka Fidsan ee Aasaasiga ah | 4H‑SI | Qaylo-dhaan | ||
| Ka-saarista Cidhifka | 3 mm | |||
| Warp/LTV/TTV/Qaanso | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Qalafsanaan | Boolish ah | Ra ≤ 1 nm | ||
| Qalafsanaan | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Dildilaaca Geesaha | Midna ma jiro | Dhererka wadarta ≤ 20 mm, hal ≤ 2 mm | ||
| Taarikada Hex | Aagga wadarta ah ≤ 0.05% | Aagga wadarta ah ≤ 0.1% | Aagga wadarta ≤ 1% | |
| Meelaha Nooca Badan leh | Midna ma jiro | Aagga wadarta ≤ 3% | Aagga wadarta ≤ 3% | |
| Kaarboonka ku jira | Aagga wadarta ah ≤ 0.05% | Aagga wadarta ≤ 3% | ||
| Xoqashada Dusha Sare | Midna ma jiro | Dhererka wadarta ≤ 1 × dhexroorka wafer | ||
| Jajabyada Geesaha | Lama oggola ≥ 0.2 mm ballac iyo qoto dheer | Ilaa 7 jajab, ≤ 1 mm midkiiba | ||
| TSD (Kala-baxa Boorsooyinka Duubista) | ≤ 500 cm⁻² | Lama Helin | ||
| BPD (Kala-baxa Diyaaradda Saldhigga) | ≤ 1000 cm⁻² | Lama Helin | ||
| Wasakhowga Dusha Sare | Midna ma jiro | |||
| Baakad | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | |
Xaashida xogta ee wafer-ka nooca 4H-N ee SiC nooca 4-inch
| Xaashida xogta ee wafer-ka SiC ee 4 inji ah | |||
| Halbeegga | Wax soo saar eber MPD ah | Heerka Wax Soo Saarka Caadiga ah (Darajada P) | Darajada Madow (D Darajada) |
| Dhexroorka | 99.5 mm–100.0 mm | ||
| Dhumuc (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Dhumuc (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Jihaynta Wafer-ka | Dhidibka ka baxsan: 4.0° dhanka <1120> ±0.5° ee 4H-N; Dhidibka saaran: <0001> ±0.5° ee 4H-Si | ||
| Cufnaanta Tuubooyinka Yaryar (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Cufnaanta Tuubooyinka Yaryar (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Iska caabin (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Iska caabin (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Jihada Fidsan ee Aasaasiga ah | [10-10] ±5.0° | ||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ±2.0 mm | ||
| Dhererka Fidsan ee Labaad | 18.0 mm ±2.0 mm | ||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW laga bilaabo heerka ugu sarreeya ±5.0° | ||
| Ka-saarista Cidhifka | 3 mm | ||
| LTV/TTV/Qoos Wareeg | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Qalafsanaan | Ra Boolish ah ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Midna ma jiro | Dhererka wadarta ≤10 mm; dherer hal ≤2 mm |
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% |
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadarta ah ≤3% | |
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ah ≤1 dhexroorka wafer | |
| Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh | Lama oggola ≥0.2 mm ballac iyo qoto dheer | 5 la oggol yahay, ≤1 mm midkiiba | |
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | ||
| Kala-baxa boolal-xidhka | ≤500 cm⁻² | Lama Helin | |
| Baakad | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | Cajalad badan oo wafer ah ama weel wafer ah oo keliya |
Xaashida xogta ee wafer-ka nooca HPSI ee 4 inji ah ee SiC
| Xaashida xogta ee wafer-ka nooca HPSI ee 4 inji ah ee SiC | |||
| Halbeegga | Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) | Heerka Wax Soo Saarka Caadiga ah (Darajada P) | Darajada Madow (D Darajada) |
| Dhexroorka | 99.5–100.0 mm | ||
| Dhumuc (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Jihaynta Wafer-ka | Dhidibka ka baxsan: 4.0° ilaa <11-20> ±0.5° ee 4H-N; Dhidibka saaran: <0001> ±0.5° ee 4H-Si | ||
| Cufnaanta Tuubooyinka Yaryar (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Iska caabin (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Jihada Fidsan ee Aasaasiga ah | (10-10) ±5.0° | ||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ±2.0 mm | ||
| Dhererka Fidsan ee Labaad | 18.0 mm ±2.0 mm | ||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW laga bilaabo heerka ugu sarreeya ±5.0° | ||
| Ka-saarista Cidhifka | 3 mm | ||
| LTV/TTV/Qoos Wareeg | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Qalafsanaan (wajiga C) | Boolish ah | Ra ≤1 nm | |
| Qalafsanaan (Wajiga Si) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Dhererka wadarta ≤10 mm; dherer hal ≤2 mm | |
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% |
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadarta ah ≤3% | |
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ah ≤1 dhexroorka wafer | |
| Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh | Lama oggola ≥0.2 mm ballac iyo qoto dheer | 5 la oggol yahay, ≤1 mm midkiiba | |
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Midna ma jiro | |
| Kala-baxa Boorsooyinka Xidhmada leh | ≤500 cm⁻² | Lama Helin | |
| Baakad | Cajalad badan oo wafer ah ama weel wafer ah oo keliya | ||
Codsiga wafer-ka SiC
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Modules-ka Awoodda SiC Wafer ee loogu talagalay Beddelayaasha EV
MOSFET-yada iyo diodes-yada ku salaysan SiC wafer-ka ee lagu dhisay substrate-ka SiC wafer-ka tayo sare leh waxay keenaan khasaarooyin aad u hooseeya oo beddel ah. Iyagoo adeegsanaya tignoolajiyada wafer-ka SiC, modules-yadan korontada waxay ku shaqeeyaan danab sare iyo heerkul sare, taasoo awood u siinaysa inverters-yada jiidista oo hufan. Isku-darka wafer-ka SiC wuxuu dhimaa shuruudaha qaboojinta iyo raadadka, isagoo muujinaya awoodda buuxda ee hal-abuurka wafer-ka SiC. -
Aaladaha RF & 5G ee Soo Noqnoqda Sare ee ku shaqeeya SiC Wafer
Amplifiers-ka iyo badhanka RF ee lagu sameeyay goobaha SiC wafer ee nus-insulating-ka ah waxay muujinayaan koronto-qaadis heer sare ah iyo danab jabitaan. Substrate-ka wafer-ka SiC wuxuu yareeyaa khasaaraha dielectric ee mawjadaha GHz, halka xoogga walxaha SiC wafer uu u oggolaanayo hawlgal deggan xaaladaha awoodda sare leh iyo heerkulka sare - taasoo ka dhigaysa wafer-ka SiC substrate-ka doorashada saldhigyada saldhigga 5G ee jiilka xiga iyo nidaamyada radar-ka. -
Substrates-ka Optoelectronic & LED-ka ee ka yimid SiC Wafer
Nalalka buluugga ah iyo kuwa UV ee lagu beero substrate-ka SiC waxay ka faa'iidaystaan iswaafajinta shaatiyada iyo kala-baxa kulaylka. Isticmaalka wafer-ka C-face ee la safeeyey ee SiC wuxuu hubiyaa lakabyo epitaxial ah oo isku mid ah, halka adkaanta asalka ah ee wafer-ka SiC ay suurtogal ka dhigto khafiifinta wafer-ka wanaagsan iyo baakadaha qalabka lagu kalsoonaan karo. Tani waxay ka dhigaysaa wafer-ka SiC mid aad loogu talagalay codsiyada LED-ka ee awoodda sare leh, cimri dheer.
Su'aalaha iyo Jawaabaha ee SiC wafer-ka
1. S: Sidee loo sameeyaa buskudka SiC?
A:
Wafer-ka SiC ee la sameeyayTallaabooyin Faahfaahsan
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Waferada SiCDiyaarinta Walxaha Cayriin
- Isticmaal budada SiC ee heerka ≥5N (wasakhda ≤1 ppm).
- Shaandhee oo hore u dub si aad uga saarto isku-dhafka kaarboon ama nitrogen ee haray.
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SiCDiyaarinta Biyo-dhalada abuurka
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Qaado gabal kiristaal ah oo 4H-SiC ah, jarjar jihada 〈0001〉 ilaa ~10 × 10 mm².
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Nadiifin sax ah oo loo sameeyay Ra ≤0.1 nm iyo calaamadaynta jihada kiristaalka.
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SiCKobaca PVT (Gaadiidka Uumiga Jirka)
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Ku shub graphite crucible: salka ku dar budada SiC, dusha sare ku dar kiristaal iniin ah.
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U daadi 10⁻³–10⁻⁵ Qulqul ama dib u buuxi adigoo isticmaalaya helium saafi ah oo heer sare ah 1 atm.
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Kuleyli aagga isha ilaa 2100-2300 ℃, ku hay aagga abuurka 100-150 ℃ qabow.
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Xakamee heerka koritaanka 1–5 mm/saacaddii si aad isugu dheellitirto tayada iyo wax soo saarka.
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SiCIngot Annealing
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Ku rid ingot-ka SiC ee koray heerkul ah 1600–1800 ℃ muddo 4–8 saacadood ah.
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Ujeeddo: yaree cadaadiska kulaylka iyo yaree cufnaanta kala-baxa.
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SiCGooynta Wafer-ka
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Isticmaal miinshaar dheeman ah si aad u jarjarto buskudka oo u kala gooysa buskudyo dhumucdoodu tahay 0.5–1 mm.
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Yaree gariirka iyo xoogga dhinaca si aad uga fogaato dildilaaca yar yar.
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SiCWaferShiidida iyo Nadiifinta
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Shiidi adagsi looga saaro dhaawaca jarista (qafiifnimada ~ 10–30 µm).
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Shiidi fiicansi loo gaaro fidsanaan ≤5 µm.
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Nadiifinta Kiimikada-Farsamada (CMP)si loo gaaro dhammaystir muraayad u eg (Ra ≤0.2 nm).
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SiCWaferNadiifinta iyo Kormeerka
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Nadiifinta Ultrasonic-kaxalka Piranha (H₂SO₄: H₂O₂), biyaha DI, ka dibna IPA.
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XRD/Raman spectroscopysi loo xaqiijiyo nooca polytype (4H, 6H, 3C).
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Interferometrysi loo cabbiro fidsanaanta (<5 µm) iyo wareegga (<20 µm).
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Baaritaan afar-dhibcood ahsi loo tijaabiyo iska caabinta (tusaale ahaan HPSI ≥10⁹ Ω·cm).
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Kormeerka cilladahaiyadoo la adeegsanayo mikroskoobo iftiin oo kala fog iyo tijaabiye xoqan.
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SiCWaferKala-soocidda & Kala-soocidda
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Kala sooc bufadaha nooca polytype iyo nooca korontada:
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Nooca N-4H-SiC (4H-N): Xoojinta side-qaadaha 10¹⁶–10¹⁸ cm⁻³
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4H-SiC Nadiif Sare oo Badh-dabool ah (4H-HPSI): iska caabin ≥10⁹ Ω·cm
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Nooca N-6H-SiC (6H-N)
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Kuwa kale: 3C-SiC, nooca P, iwm.
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SiCWaferBaakadaha iyo Rarista
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Ku rid sanduuqyo nadiif ah oo aan boor lahayn.
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Sanduuq kasta ku calaamadee dhexroorka, dhumucda, nooca polytype-ka, heerka iska caabinta, iyo lambarka dufcadda.
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2. S: Waa maxay faa'iidooyinka ugu muhiimsan ee waferka SiC marka loo eego waferka silikoon?
A: Marka la barbardhigo wafers-ka silicon, wafers-ka SiC waxay awood u leeyihiin:
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Hawlgalka danab sare(>1,200 V) oo leh iska caabin hoose.
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Xasillooni heerkul sare(>300 °C) iyo maaraynta kulaylka oo la hagaajiyay.
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Xawaaraha beddelka degdega ahiyadoo ay yar tahay khasaaraha beddelka, yareynta qaboojinta heerka nidaamka iyo cabbirka beddelka korontada.
4. S: Waa maxay cilladaha caadiga ah ee saameeya wax soo saarka iyo waxqabadka SiC wafer?
A: Cilladaha ugu muhiimsan ee wafer-ka SiC waxaa ka mid ah micropipes, kala-goysyada basal plane (BPDs), iyo xoqidda dusha sare. Micropipes-ku waxay sababi karaan cillad qalab oo masiibo ah; BPDs waxay kordhiyaan iska caabbinta waqti ka dib; xoqidda dusha sarena waxay horseeddaa jabitaan wafer ah ama korriin liidata oo epitaxial ah. Sidaa darteed, kormeer adag iyo yareynta cilladaha ayaa lagama maarmaan u ah kor u qaadista wax soo saarka wafer-ka SiC.
Waqtiga boostada: Juun-30-2025