SiC wafer's abtract
Waferrada Silicon carbide (SiC) waxay noqdeen substrate-ka doorashada ee tamarta sare, soo noqnoqoshada sare, iyo heerkulka sare ee elektiroonigga guud ahaan baabuurta, tamarta dib loo cusboonaysiin karo, iyo qaybaha hawada. Bootfooliyadayadu waxay dabooshaa noocyada kala duwan ee muhiimka ah iyo qorshayaasha doping-nitrogen-doped 4H (4H-N), saafi-sare semi-insulating (HPSI), nitrogen-doped 3C (3C-N), iyo p-nooca 4H/6H (4H/6H-P) -oo lagu bixiyo saddex darajo oo tayo leh: PRIME (qalab si buuxda loo sifeeyay, MMY si buuxda loo toosiyay tijaabooyinka habsocodka), iyo CILMI-BAARID (Lakabyada epi-caadiga ah iyo profiles-ka doping ee R&D). Dhexroorrada waferku waxay fidsan yihiin 2″, 4″, 6″, 8″, iyo 12″ si ay ugu habboonaadaan agabka dhaxalka ah iyo dharka sare ee labbada. Waxaan sidoo kale bixinaa boules monocrystalline iyo kiristaalo abuur si sax ah u janjeedha si ay u taageeraan korriinka crystal-ka ee guriga.
Wafersyadayada 4H-N waxay ka kooban yihiin cufnaanta sideyaasha laga bilaabo 1 × 10¹⁶ ilaa 1 × 10¹⁹ cm⁻³ iyo iska caabbinta 0.01-10 Ω·cm, oo keenaya dhaqdhaqaaqa elektaroonigga ah iyo meelaha burbursan ee ka sarreeya 2 MV/cm-ku habboon Schottky diodes, MOSFETs. Substrate-yada HPSI waxay ka badan yihiin 1 × 10¹² Ω·cm iska caabin ah oo leh cufnaanta micropipe ee ka hooseeya 0.1 cm⁻², iyada oo hubinaysa daadinta ugu yar ee qalabka RF iyo microwave. Cubic 3C-N, oo lagu heli karo qaabab 2″ iyo 4″ ah, waxa ay awood u siinaysaa heteroepitaxy silikoon oo waxay taageertaa codsiyada photonic iyo MEMS ee cusub. P-nooca 4H/6H-P wafer, oo lagu shubay aluminium ilaa 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, waxay fududaysaa qaab dhismeedka qalabka dhammaystiran.
Waferrada PRIME waxay maraan dhalaalid kiimiko-farsamo ah ilaa <0.2 nm RMS qallafsanaanta, wadarta dhumucda kala duwanaanshaha ka hooseeya 3 µm, iyo qaanso <10 µm. Substrate-yada DUMMY waxay dardargeliyaan isu imaatinka iyo tijaabooyinka baakadaha, halka waferrada CILMI-BAARINTA ay muujinayaan dhumucda lakabka epi-lakabka ee 2-30 µm iyo doping bespoke. Dhammaan badeecooyinka waxaa lagu caddeeyey kala-duwanaanshaha raajada (qallooca ruxay <30 arcsec) iyo Raman spectroscopy, oo leh tijaabooyin koronto-cabbirka Hall-ka, C-V profile, iyo iskaanka micropipe-la hubinta u hoggaansanaanta JEDEC iyo SEMI.
Dhismooyinka ilaa 150 mm dhexroorka ah waxaa lagu beeraa PVT iyo CVD oo leh cufnaanta kala-baxa ee ka hooseeya 1 × 10³ cm⁻² iyo tirooyinka micropipe yar. Kiristaalo abuur waxaa lagu gooyay 0.1° dhidibka c-dhidibka si loo dammaanad qaado korriinka la soo saari karo iyo wax soo saarka jeexjeexyada sare.
Marka la isku daro noocyo badan oo kala duwan, kala duwanaansho doping, darajooyin tayo leh, cabbirrada wafer-ka, iyo gudaha-guriga iyo wax-soo-saarka abuurka-crystal, madalkeena SiC substrate waxay hagaajisaa silsiladaha sahayda waxayna dardargelisaa horumarinta aaladda baabuurta korantada, xariijimaha smart, iyo codsiyada deegaanka adag.
SiC wafer's abtract
Waferrada Silicon carbide (SiC) waxay noqdeen substrate-ka doorashada ee tamarta sare, soo noqnoqoshada sare, iyo heerkulka sare ee elektiroonigga guud ahaan baabuurta, tamarta dib loo cusboonaysiin karo, iyo qaybaha hawada. Bootfooliyadayadu waxay dabooshaa noocyada kala duwan ee muhiimka ah iyo qorshayaasha doping-nitrogen-doped 4H (4H-N), saafi-sare semi-insulating (HPSI), nitrogen-doped 3C (3C-N), iyo p-nooca 4H/6H (4H/6H-P) -oo lagu bixiyo saddex darajo oo tayo leh: PRIME (qalab si buuxda loo sifeeyay, MMY si buuxda loo toosiyay tijaabooyinka habsocodka), iyo CILMI-BAARID (Lakabyada epi-caadiga ah iyo profiles-ka doping ee R&D). Dhexroorrada waferku waxay fidsan yihiin 2″, 4″, 6″, 8″, iyo 12″ si ay ugu habboonaadaan agabka dhaxalka ah iyo dharka sare ee labbada. Waxaan sidoo kale bixinaa boules monocrystalline iyo kiristaalo abuur si sax ah u janjeedha si ay u taageeraan korriinka crystal-ka ee guriga.
Wafersyadayada 4H-N waxay ka kooban yihiin cufnaanta sideyaasha laga bilaabo 1 × 10¹⁶ ilaa 1 × 10¹⁹ cm⁻³ iyo iska caabbinta 0.01-10 Ω·cm, oo keenaya dhaqdhaqaaqa elektaroonigga ah iyo meelaha burbursan ee ka sarreeya 2 MV/cm-ku habboon Schottky diodes, MOSFETs. Substrate-yada HPSI waxay ka badan yihiin 1 × 10¹² Ω·cm iska caabin ah oo leh cufnaanta micropipe ee ka hooseeya 0.1 cm⁻², iyada oo hubinaysa daadinta ugu yar ee qalabka RF iyo microwave. Cubic 3C-N, oo lagu heli karo qaabab 2″ iyo 4″ ah, waxa ay awood u siinaysaa heteroepitaxy silikoon oo waxay taageertaa codsiyada photonic iyo MEMS ee cusub. P-nooca 4H/6H-P wafer, oo lagu shubay aluminium ilaa 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, waxay fududaysaa qaab dhismeedka qalabka dhammaystiran.
Waferrada PRIME waxay maraan dhalaalid kiimiko-farsamo ah ilaa <0.2 nm RMS qallafsanaanta, wadarta dhumucda kala duwanaanshaha ka hooseeya 3 µm, iyo qaanso <10 µm. Substrate-yada DUMMY waxay dardargeliyaan isu imaatinka iyo tijaabooyinka baakadaha, halka waferrada CILMI-BAARINTA ay muujinayaan dhumucda lakabka epi-lakabka ee 2-30 µm iyo doping bespoke. Dhammaan badeecooyinka waxaa lagu caddeeyey kala-duwanaanshaha raajada (qallooca ruxay <30 arcsec) iyo Raman spectroscopy, oo leh tijaabooyin koronto-cabbirka Hall-ka, C-V profile, iyo iskaanka micropipe-la hubinta u hoggaansanaanta JEDEC iyo SEMI.
Dhismooyinka ilaa 150 mm dhexroorka ah waxaa lagu beeraa PVT iyo CVD oo leh cufnaanta kala-baxa ee ka hooseeya 1 × 10³ cm⁻² iyo tirooyinka micropipe yar. Kiristaalo abuur waxaa lagu gooyay 0.1° dhidibka c-dhidibka si loo dammaanad qaado korriinka la soo saari karo iyo wax soo saarka jeexjeexyada sare.
Marka la isku daro noocyo badan oo kala duwan, kala duwanaansho doping, darajooyin tayo leh, cabbirrada wafer-ka, iyo gudaha-guriga iyo wax-soo-saarka abuurka-crystal, madalkeena SiC substrate waxay hagaajisaa silsiladaha sahayda waxayna dardargelisaa horumarinta aaladda baabuurta korantada, xariijimaha smart, iyo codsiyada deegaanka adag.
Sawirka wafer ee SiC
6inch 4H-N nooca xaashida xogta wafer ee SiC
| 6 inch xaashida xogta wafers ee SiC | ||||
| Halbeegga | Sub-parameter | Darajada Z | P Darajada | D Darajada |
| Dhexroorka | 149.5-150.0 mm | 149.5-150.0 mm | 149.5-150.0 mm | |
| Dhumucda | 4H-N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Dhumucda | 4H-SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Hanuuninta Wafer | dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhinaca dhidibka: <0001> ± 0.5° (4H-SI) | dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhinaca dhidibka: <0001> ± 0.5° (4H-SI) | dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° (4H-N); Dhinaca dhidibka: <0001> ± 0.5° (4H-SI) | |
| Cufnaanta Dheef-yar | 4H-N | ≤ 0.2cm⁻² | ≤2cm⁻² | ≤15cm⁻² |
| Cufnaanta Dheef-yar | 4H-SI | ≤ 1 cm⁻² | ≤5cm⁻² | ≤15cm⁻² |
| iska caabin | 4H-N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| iska caabin | 4H-SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Hanuuninta Flat Primary | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Dhererka Guriga aasaasiga ah | 4H-N | 47.5 mm ± 2.0 mm | ||
| Dhererka Guriga aasaasiga ah | 4H-SI | Darajo | ||
| Ka saarida gees | 3 mm | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Qalafsanaan | Polish | Ra ≤ 1 nm | ||
| Qalafsanaan | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Dildilaaca cidhifka | Midna | Dhererka isugeynta ≤ 20 mm, hal ≤ 2 mm | ||
| Hex Plates | Aagga isugeynta ≤ 0.05% | Aagga isugeynta ≤ 0.1% | Aagga isugeynta ≤ 1% | |
| Noocyada kala duwan | Midna | Aagga isugeynta ≤ 3% | Aagga isugeynta ≤ 3% | |
| Kaarboon ku darida | Aagga isugeynta ≤ 0.05% | Aagga isugeynta ≤ 3% | ||
| Xoqashada dusha sare | Midna | Dhererka isugeynta ≤ 1 × dhexroor maroodi | ||
| Chips Edge | Midna lama ogola ≥ 0.2 mm ballac & qoto dheer | Ilaa 7 chips, ≤ 1 mm midkiiba | ||
| TSD ( Kala-baxa Xadhkaha Isku-xidhka ah) | ≤500 cm⁻² | N/A | ||
| BPD (Base Plane Meesha) | ≤ 1000 cm⁻² | N/A | ||
| Wasakhaynta Dusha sare | Midna | |||
| Baakadaha | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | |
4inch 4H-N nooca xaashida xogta wafer ee SiC
| 4inch xaashida xogta wafer ee SiC | |||
| Halbeegga | Wax soo saarka MPD eber | Heerka Wax-soo-saarka caadiga ah (P Degree) | Fasalka Dhamaystiran (D Derajada) |
| Dhexroorka | 99.5 mm-100.0 mm | ||
| Dhumucda (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Dhumucda (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Hanuuninta Wafer | dhidibka ka baxsan: 4.0° dhanka <1120> ±0.5° ee 4H-N; Dhinaca dhidibka: <0001> ± 0.5° ee 4H-Si | ||
| Cufnaanta Dheecaan yar (4H-N) | ≤0.2cm⁻² | ≤2cm⁻² | ≤15cm⁻² |
| Cufnaanta Micropipe (4H-Si) | ≤1cm⁻² | ≤5cm⁻² | ≤15cm⁻² |
| Iska caabin (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Iska caabin (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Hanuuninta Flat Primary | [10-10] ± 5.0° | ||
| Dhererka Guriga aasaasiga ah | 32.5 mm ± 2.0 mm | ||
| Dhererka Guriga Sare | 18.0 mm ± 2.0 mm | ||
| Hanuuninta Guriga Sare | Silikoon wejiga kor ah: 90° CW laga bilaabo guri dabaq ah ± 5.0° | ||
| Ka saarida gees | 3 mm | ||
| LTV/TTV/Warp qaanso | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Qalafsanaan | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Dildilaaca Cidhifyada Iftiinka Xoogan Sare | Midna | Midna | Dhererka isugeynta ≤10 mm; dhererka kaliya ≤2 mm |
| Taarikada Hex By Iftiin Xoogan Sare | Aagga wadarta ≤0.05% | Aagga wadarta ≤0.05% | Aagga isugeynta ≤0.1% |
| Meelo Badan Oo Iftiin Xoogan Sare leh | Midna | Aagga isugeynta ≤3% | |
| Kaarboon Muuqaal ah | Aagga wadarta ≤0.05% | Aagga isugeynta ≤3% | |
| Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare | Midna | Dhererka isugeynta ≤1 dhexroor maroodi | |
| Chips-ka Cidhifyada Iftiinka Xoogga Sare | Midna lama oggola ≥0.2mm ballac iyo qoto dheer | 5 waa la ogol yahay, ≤1 mm midkiiba | |
| Wasakhda Silikon Dusha Sare ee Iftiinka Xoogan Sare | Midna | ||
| Kala leexashada xadhigga dunta | ≤500 cm⁻² | N/A | |
| Baakadaha | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah |
4inch nooca HPSI xaashida xogta wafer ee SiC
| 4inch nooca HPSI xaashida xogta wafer ee SiC | |||
| Halbeegga | Wax-soo-saarka MPD eber (Grade Z) | Heerka Wax-soo-saarka caadiga ah (P Degree) | Fasalka Dhamaystiran (D Derajada) |
| Dhexroorka | 99.5-100.0 mm | ||
| Dhumucda (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Hanuuninta Wafer | dhidibka ka baxsan: 4.0° dhanka <11-20> ±0.5° ee 4H-N; Dhinaca dhidibka: <0001> ± 0.5° ee 4H-Si | ||
| Cufnaanta Micropipe (4H-Si) | ≤1cm⁻² | ≤5cm⁻² | ≤15cm⁻² |
| Iska caabin (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Hanuuninta Flat Primary | (10-10) ±5.0° | ||
| Dhererka Guriga aasaasiga ah | 32.5 mm ± 2.0 mm | ||
| Dhererka Guriga Sare | 18.0 mm ± 2.0 mm | ||
| Hanuuninta Guriga Sare | Silikoon wejiga kor ah: 90° CW laga bilaabo guri dabaq ah ± 5.0° | ||
| Ka saarida gees | 3 mm | ||
| LTV/TTV/Warp qaanso | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| qallafsanaan (C wejiga) | Polish | Ra ≤1 nm | |
| qallafsanaan (Si wejiga) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Dildilaaca Cidhifyada Iftiinka Xoogan Sare | Midna | Dhererka isugeynta ≤10 mm; dhererka kaliya ≤2 mm | |
| Taarikada Hex By Iftiin Xoogan Sare | Aagga wadarta ≤0.05% | Aagga wadarta ≤0.05% | Aagga isugeynta ≤0.1% |
| Meelo Badan Oo Iftiin Xoogan Sare leh | Midna | Aagga isugeynta ≤3% | |
| Kaarboon Muuqaal ah | Aagga wadarta ≤0.05% | Aagga isugeynta ≤3% | |
| Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare | Midna | Dhererka isugeynta ≤1 dhexroor maroodi | |
| Chips-ka Cidhifyada Iftiinka Xoogga Sare | Midna lama oggola ≥0.2mm ballac iyo qoto dheer | 5 waa la ogol yahay, ≤1 mm midkiiba | |
| Wasakhda Silikon Dusha Sare ee Iftiinka Xoogan Sare | Midna | Midna | |
| Kala-baxa Xadhkaha Isku-xidhka | ≤500 cm⁻² | N/A | |
| Baakadaha | Cajalad badan oo wafer ah ama weel kaliya oo canjeero ah | ||
Waqtiga boostada: Juun-30-2025