Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: Wax isku mid ah oo leh laba masiir oo kala duwan

1. Shuruudaha Nadaafadda Kala Duwan ee Agabka Ceyriinka

 

SiC-ceramik waxay leedahay shuruudo nadiif ah oo dabacsan oo loogu talagalay kaydkeeda budada ah. Caadi ahaan, alaabada heerka ganacsi ee leh 90%-98% daahirsanaantu waxay dabooli karaan baahiyaha dalabka intooda badan, in kastoo ceramics-dhismeedka waxqabadka sare u baahan karo 98%-99.5% daahirnimo (tusaale, falcelinta-ku xidhan SiC waxay u baahan tahay nuxurka silikon lacag la'aan ah). Waxay u dulqaadataa wasakhda qaarkood marmarka qaarkoodna waxay si ula kac ah ugu daraa qalabyada qallafsan sida aluminium oxide (Al₂O₃) ama yttrium oxide (Y₂O₃) si ay u wanaajiso wax qabadka sintering, heerkulka sintering hooseeyo, iyo kor loogu qaado cufnaanta alaabta kama dambaysta ah.

 

Semiconductor-grade SiC waxay u baahan tahay heerar nadiif ah oo kaamil ah. Substrate-class crystal crystal SiC wuxuu u baahan yahay ≥99.9999% (6N) nadiif ah, oo leh qaar ka mid ah codsiyada dhamaadka-sare oo u baahan 7N (99.99999%) daahirnimo. Lakabyada Epitaxial waa in ay joogteeyaan uruurinta wasakhda ka hooseysa 10¹⁶ atamka/cm³ (gaar ahaan ka fogaanshaha wasakhda hoose sida B, Al, iyo V). Xataa wasakhda raadraaca sida birta (Fe), aluminium (Al), ama boron (B) waxay si ba'an u saameyn kartaa guryaha korantada iyagoo keenaya kala firdhinta sideyaasha, hoos u dhigista xoogga goobta burburka, iyo ugu dambeyntii waxyeello u geysata waxqabadka iyo isku halaynta aaladda, taasoo u baahan in si adag loo xakameeyo wasakhda.

 

Qalabka silikon carbide semiconductor

 

2. Qaab-dhismeedyada Crystal Gaarka ah iyo Tayada

 

SiC-shahaadada dhoobada ah ayaa ugu horayn u jirta sida budada polycrystalline ama maydhyo qallafsan oo ka kooban SiC microcrystals si aan kala sooc lahayn u jihaysan. Walaxda waxaa ku jiri kara noocyo badan oo badan (tusaale, α-SiC, β-SiC) iyada oo aan si adag loo koontaroolin noocyo badan oo gaar ah, iyadoo xoogga la saarayo cufnaanta walxaha guud iyo isku midnimada. Qaab dhismeedkeeda guduhu waxa uu leeyahay xaddi badan oo hadhuudh ah iyo daldaloollo yar yar, waxana laga yaabaa inay ka koobnaan karaan aaladaha qallafsan (tusaale, Al₂O₃, Y₂O₃).

 

SiC-semiconductor-ku waa inuu ahaadaa hal-crystal substrates ama lakabyo epitaxial oo leh qaabab crystal aad loo dalbaday. Waxay u baahan tahay noocyo badan oo gaar ah oo lagu helo farsamooyinka korriinka kristal ee saxda ah (tusaale, 4H-SiC, 6H-SiC). Guryaha korantada sida dhaqdhaqaaqa elektarooniga ah iyo bandgap-ka ayaa aad xasaasi ugu ah doorashada nooca badan, taasoo u baahan in la xakameeyo. Waqtigan xaadirka ah, 4H-SiC ayaa xukuma suuqa sababtoo ah astaamihiisa korantada ee sarreeya oo ay ku jiraan dhaqdhaqaaqa side sare iyo burburka xoogga goobta, taasoo ka dhigaysa mid ku habboon aaladaha korantada.

 

3. Isbarbardhigga Nidaamka Kakanaanta

 

SiC-shahaadada dhoobada ah waxay shaqaaleysiisaa hababka wax soo saarka ee fudud (diyaarinta budada → samaynta → sintering), oo la mid ah "leben-samaynta." Nidaamku wuxuu ku lug leeyahay:

 

• Isku-darka budada SiC-ganacsiga ah (sida caadiga ah cabbir yar) oo leh xirmooyin
• Samaynta iyada oo la riixayo
• Heerkulka sare ee sintering (1600-2200 ° C) si loo gaaro cufnaanta iyada oo loo marayo faafinta walxaha
  Codsiyada badankoodu waxay ku qanacsan yihiin> 90% cufnaanta. Geedi socodka oo dhami uma baahna kontorool sax ah oo korriinka kristal ah, iyada oo diiradda la saarayo samaynta iyo isku dheelitirnaanta. Faa'iidooyinka waxaa ka mid ah dabacsanaanta nidaamka ee qaababka kakan, in kasta oo ay leeyihiin shuruudo nadiif ah oo hooseeya.

 

Semiconductor-grade SiC waxay ku lug leedahay habab aad u adag (diyaarinta budada nadiifka sare ah → kobaca substrate-ka-crystal → dhigista wafer epitaxial → qalabaynta qalabka). Tallaabooyinka muhiimka ah waxaa ka mid ah:

 

• Diyaarinta substrate ugu horrayn iyadoo la adeegsanayo habka uumiga uumiga (PVT).
• Sublimation of SiC budada xaaladaha daran (2200-2400 ° C, faaruq sare)
• Xakamaynta saxda ah ee heerkulbeegyada heerkulka (± 1°C) iyo cabirrada cadaadiska
• Koritaanka lakabka Epitaxial iyada oo loo marayo kaydinta uumiga kiimikada (CVD) si loo abuuro lakabyo dhumuc leh oo isku mid ah (sida caadiga ah dhowr ilaa tobanaan microns)
  Nidaamka oo dhan wuxuu u baahan yahay bay'ad aad u nadiif ah (tusaale, qolalka nadiifka ah ee fasalka 10) si looga hortago faddaraynta. Astaamaha waxaa ka mid ah habka saxda ah ee saxda ah, u baahan in la xakameeyo goobaha kulaylka iyo heerka qulqulka gaaska, oo leh shuruudo adag oo loogu talagalay nadiifinta alaabta ceeriin (> 99.9999%) iyo casriyeynta qalabka.

 

4. Kala duwanaanshaha Qiimaha ee Muhiimka ah iyo Hanuuninta Suuqa

 

Tilmaamaha SiC-seramikada:

• Walxaha ceeriin: budada heerka ganacsiga
• Hababka fudud marka loo eego
• Qiimaha jaban: Kumanaan ilaa tobanaan kun oo RMB halkii ton
• Codsiyada ballaaran: Abrasives, refractories, iyo warshado kale oo qiimo leh

 

SiC-seconductor-fasalka sifooyinka:

• Wareegyada koritaanka substrate dhaadheer
• Xakamaynta cilladda oo caqabad ku ah
• Heerarka waxsoosaarka hooseeya
• Qiimaha sare: Kumanaan USD 6-inch substrate
• Suuqyada diirada la saaray: Qalabka elektiroonigga ah ee waxqabadka sarreeya sida aaladaha korantada iyo qaybaha RF
  Horumarka degdega ah ee baabuurta tamarta cusub iyo isgaarsiinta 5G, baahida suuqa ayaa si aad ah u kordheysa.

 

5. Dhacdooyinka Codsiga Kala Duwan

 

SiC-shahaadada dhoobada ah waxay u adeegtaa sidii "faraska warshadaha" ugu horrayn codsiyada qaabdhismeedka. Ka faa'iidaysiga astaamihiisa farsamo ee aadka u wanaagsan (engegnaanta sare, xidhashada caabbinta) iyo guryaha kulaylka (iska caabinta heerkulka sare, caabbinta oksaydhka), waxay ku fiican tahay:

 

• Abrasives (wax shiida taayirrada, warqad ciid)
• Refractories (dahaarka kilka heerkulkiisu sarreeyo)
• Xiro/daxalka u adkaysta qaybaha ( maydadka bambooyinka, dahaarka tuubooyinka)

 

Qaybaha qaabdhismeedka dhoobada ee Silicon carbide

 

Semiconductor-grade SiC waxay u shaqeysaa sidii “elite eletroonik,” iyadoo adeegsaneysa dhismaheeda semiconductor bandgap ballaaran si ay u muujiso faa'iidooyinka gaarka ah ee aaladaha elektiroonigga ah:

 

• Aaladaha tamarta: rogayaasha EV, beddelayaasha korantada (kor u qaadista waxtarka beddelka awoodda)
• Qalabka RF: Saldhigyada 5G, nidaamyada radar (oo awood u siinaya soo noqnoqoshada hawlgallada sare)
• Optoelectronics: Walxaha substrate ee LED-yada buluuga ah

 

200-milimitir SiC epitaxial wafer

 

Cabirka	SiC-shahaadada dhoobada	Semiconductor-fasalka SiC
Dhismaha Crystal	Polycrystalline, noocyo badan oo badan	Hal crystal, noocyo badan oo si adag loo doortay
Diirada Hawsha	Cufnaanta iyo xakamaynta qaabka	tayada Crystal iyo xakamaynta hantida korantada
Mudnaanta Waxqabadka	Awoodda makaanikada, iska caabinta daxalka, xasilloonida kulaylka	Qalabka korantada (bandgap, goobta burburka, iwm.)
Xaaladaha Codsiga	Qaybaha qaab dhismeedka, qaybo u adkaysta, qaybaha heerkulka sare	Aaladaha awoodda sare leh, aaladaha soo noqnoqda, aaladaha optoelectronic
Kharashka Darawaliinta	Habraaca dabacsanaanta, qiimaha alaabta ceeriin	Heerka kobaca Crystal, saxnaanta qalabka, nadiifinta alaabta ceeriin

 

Marka la soo koobo, farqiga aasaasiga ah wuxuu ka yimid ujeeddooyinkooda shaqo ee kala duwan:-ceram-grade SiC waxay isticmaashaa "qaabka (qaab-dhismeedka)" halka heerka-semiconductor-SiC ay isticmaasho "hanti (koronto)." Kii hore wuxuu daba socdaa wax qabad farsamo / heerkuleed oo kharash-ku-ool ah, halka kan dambe uu ka dhigan yahay meesha ugu sarreysa ee tignoolajiyada diyaarinta walxaha sida nadiif-sare, walxo shaqeynaya hal-crystal. In kasta oo la wadaago asal kiimikaad oo isku mid ah, heerka dhoobada iyo heerka semiconductor-SC waxay muujinayaan kala duwanaansho cad oo xagga nadiifnimada, qaab dhismeedka kristaalka ah, iyo hababka wax soo saarka - haddana labaduba waxay gacan weyn ka geystaan wax soo saarka warshadaha iyo horumarka tignoolajiyada ee goobahooda.