Maalintii 26-aad, Power Cube Semi wuxuu ku dhawaaqay horumarka guusha leh ee Kuuriyada Koonfureed 2300V SiC (Silicon Carbide) semiconductor MOSFET.
Marka la barbar dhigo Si (Silicon) semiconductors-ku-saleysan, SiC (Silicon Carbide) waxay u adkeysan kartaa koronto sare, markaa waxaa lagu ammaanaa aaladda jiilka soo socda ee hogaaminaya mustaqbalka semiconductors koronto. Waxay u adeegtaa sidii qayb muhiim ah oo looga baahan yahay soo bandhigida tignoolajiyada casriga ah, sida badinta baabuurta korantada iyo ballaarinta xarumaha xogta ee ay wadaan sirdoonka macmal.
Awoodda Cube Semi waa shirkad aan caqli-gal ahayn oo soo saarta aaladaha korantada korantada saddex qaybood oo waaweyn: SiC (Silicon Carbide), Si (Silicon), iyo Ga2O3 (Gallium Oxide). Dhawaan, shirkaddu waxay dalbatay oo iibisay awoodda sare ee Schottky Barrier Diodes (SBDs) shirkad caalami ah oo gawaarida korontada ku shaqeysa oo ku taal Shiinaha, iyada oo heshay aqoonsi naqshadeeda semiconductor iyo tignoolajiyada.
Siideynta 2300V SiC MOSFET ayaa ah mid xusid mudan sidii kiiskii horumarineed ee ugu horreeyay ee Kuuriyada Koonfureed. Infineon, oo ah shirkad semiconductor koronto caalami ah oo fadhigeedu yahay Jarmalka, ayaa sidoo kale ku dhawaaqday bilawga badeecadeeda 2000V bishii Maarso, laakiin iyada oo aan lahayn safka badeecada 2300V.
Infineon's 2000V CoolSiC MOSFET, oo isticmaalaya xirmada TO-247PLUS-4-HCC, waxay buuxisaa baahida kororka cufnaanta ee naqshadeeyayaasha, hubinta isku halaynta nidaamka xitaa iyadoo la adeegsanayo korantada sare ee adag iyo xaaladaha beddelka.
CoolSiC MOSFET waxay bixisaa koronto iskuxiran oo toos ah oo toos ah, taasoo awood u siineysa kororka koronta iyada oo aan la kordhin hadda. Waa aaladda silikoon carbide ee ugu horreysa ee suuqa ku jirta oo leh koronto burbursan oo ah 2000V, iyadoo la adeegsanayo xirmada TO-247PLUS-4-HCC oo leh masaafada gurguurta ee 14mm iyo nadiifinta 5.4mm. Aaladahani waxay ka kooban yihiin khasaare beddelaad hooseeya waxayna ku habboon yihiin codsiyada sida beddelayaasha xadhkaha cadceedda, nidaamyada kaydinta tamarta, iyo dallacaadda baabuurta korontada.
Taxanaha badeecada CoolSiC MOSFET 2000V waxay ku habboon tahay nidaamyada baska korantada sare leh ee DC ilaa 1500V DC. Marka la barbar dhigo 1700V SiC MOSFET, qalabkani waxa uu bixiyaa xad dhaaf ku filan nidaamyada 1500V DC. CoolSiC MOSFET waxay bixisa koronto 4.5V ah waxayna la timaadaa qalabaysan diodes jireed adag oo loogu talagalay socodka adag. Iyada oo la adeegsanayo tignoolajiyada isku xirka .XT, qaybahani waxay bixiyaan wax qabad kulayl oo aad u fiican iyo iska caabin qoyaan xoog leh.
Marka lagu daro 2000V CoolSiC MOSFET, Infineon wuxuu dhowaan bilaabi doonaa isku-dhafan CoolSiC diodes oo lagu baakadeeyay TO-247PLUS 4-pin iyo TO-247-2 rubuci saddexaad ee 2024 iyo rubuca u dambeeya 2024, siday u kala horreeyaan. Diodes-yadani waxay si gaar ah ugu habboon yihiin codsiyada qorraxda. Isku darka alaabada darawalka albaabka ku habboon ayaa sidoo kale la heli karaa.
Taxanaha wax soo saarka CoolSiC MOSFET 2000V ayaa hadda laga heli karaa suuqa. Intaa waxaa dheer, Infineon waxay bixisaa guddiyo qiimeyn ku habboon: EVAL-COOLSIC-2KVHCC. Soo-saarayaashu waxay u isticmaali karaan guddigan sidii madal imtixaan guud oo sax ah si ay u qiimeeyaan dhammaan CoolSiC MOSFETs iyo diodes lagu qiimeeyay 2000V, iyo sidoo kale EiceDRIVER is haysta hal kanaal go'doomin darawalka 1ED31xx taxan alaabada iyada oo loo marayo dual-pulse ama hawlgal PWM joogto ah.
Gung Shin-soo, Madaxa Tignoolajiyada Sare ee Power Cube Semi, ayaa yidhi, "Waxaan awoodnay inaan kordhino khibradeena jirta ee horumarinta iyo wax soo saarka ballaaran ee 1700V SiC MOSFETs ilaa 2300V.
Waqtiga boostada: Apr-08-2024