Darajada-aragga Silicon Carbide Waveguide AR Muraayadaha: Diyaarinta Nadiifinta Sare ee Substrate-dahaadhka ah

Ka soo horjeeda gadaasha kacaanka AI, muraayadaha AR ayaa si tartiib tartiib ah u galaya miyirka dadweynaha. Mawduuc si aan kala go 'lahayn isugu daraa adduunyada dhabta ah iyo tan dhabta ah, muraayadaha AR waxay ka duwan yihiin aaladaha VR iyagoo u oggolaanaya isticmaaleyaasha inay isla gartaan labadaba sawirrada dhijitaalka ah ee la saadaaliyay iyo iftiinka deegaanka isku mar. Si loo gaaro shaqadan laba-geesoodka ah—oo ka samaynta muuqaalo muuqaal-yar oo indhaha ah iyadoo la ilaalinayo gudbinta iftiinka dibadda—muraayadaha AR-ku-saleysan ee silikon carbide (SiC) waxay adeegsadaan qaab-dhismeedka waveguide (lightguide). Naqshadani waxay ka faa'iidaysanaysaa wadarta milicsiga gudaha si ay u gudbiso sawirada, oo la mid ah gudbinta fiber indhaha, sida lagu muujiyay jaantuska.

Caadi ahaan, hal 6-inji ah oo saafi ah oo nadiif ah oo badh-daboole ah ayaa soo saari kara 2-labo oo muraayad ah, halka substrate 8-inch ah uu dejiyo 3-4 lammaane. Qaadashada agabka SiC waxa ay siisay saddex faa'iidooyin oo muhiim ah:

1. Tilmaanta refractive-ka ee gaarka ah (2.7): Waxay sahlaysa> 80° muuqaalka muuqaalka midabka buuxa (FOV) oo leh lakabka lens, isaga oo meesha ka saaraya farshaxanimada qaanso-roobaadka ee caanka ku ah naqshadaha AR ee caadiga ah.
2. Isku-dhafan saddex-midab (RGB) waveguide: Beddelida xidhmooyinka mawjadaha lakabka badan, yaraynta cabbirka iyo miisaanka qalabka.
3. Dhaqdhaqaaqa kulaylka sareeyo (490 W/m·K): Waxay yaraynaysaa isu-ururinta kulaylka ee ay keentay hoos u dhaca indhaha.

Mudnaantan ayaa keentay baahida suuqa ee xooggan ee muraayadaha AR-ku-saleysan ee SiC. Heerka indhaha ee SiC ee la isticmaalo caadi ahaan waxa uu ka kooban yahay kiristaalo-daahsoon sare-sare (HPSI), kuwaas oo shuruudaha diyaarinta adag ay gacan ka geystaan kharashyada sare ee hadda jira. Sidaa awgeed, horumarinta HPSI SiC substrates ayaa muhiim u ah.

1. Qalabaynta Semi-Insulating SiC Powder
Wax-soo-saarka-warshadaha inta badan waxa uu adeegsadaa isku-darka is-faafinta heerkulka-sare (SHS), oo ah geeddi-socod dalbanaya in si taxaddar leh loo xakameeyo:

• Walxaha ceeriin: 99.999% budo kaarboon/silikoon saafi ah oo leh qiyaaso qaybo ah 10-100 μm.
• Nadaafad burbursan: Qaybaha garaafyada waxay maraan nadiifin heerkul sare ah si loo yareeyo faafinta wasakhda birta ah.
• Xakamaynta jawiga: 6N-nadiifinta argon (oo leh nadiifiyeyaasha khadka-line) waxay xakameysaa isku-dhafka nitrogen; raad raaca HCl/H₂ gaasaska ayaa laga yaabaa in la soo bandhigo si ay u beddelaan xeryahooda boron oo ay u yareeyaan nitrogen, inkasta oo xoogga saarista H₂ uu u baahan yahay hagaajin si looga hortago daxalka graphite.
• Heerarka qalabka: Foornooyinka synthesis waa inay gaadhaan <10⁻⁻ Pa base vacuum, oo leh borotokool adag oo hubinaya daadinta.

2. Caqabadaha Kobaca Crystal
Kobaca HPSI SiC wuxuu la wadaagaa shuruudaha nadaafadda ee la midka ah:

• Quudinta: 6N+-budada SiC nadiif ah oo leh B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O oo ka hooseeya xadka xadka, iyo biraha alkali ee ugu yar (Na/K).
• Nidaamyada gaaska: 6N argon/hydrogen isku darka waxay xoojiyaan iska caabbinta.
• Qalabka: Matoorada molecular waxay xaqiijinayaan faakuum ultrahigh (<10⁻⁶ Pa); daawaynta ka hor iyo nadiifinta nitrogen waa muhiim.

Hal-abuurka Habaynta Substrate
Marka la barbar dhigo silikoon, wareegyada koritaanka dheer ee SiC iyo walbahaarka soo jireenka ah (sababta dildilaaca / gees-goynta) waxay u baahan tahay habayn horumarsan:

• Jeexitaanka Laser: Waxay kordhisaa wax soo saarka 30 wafer (350 μm, miinshaar silig) ilaa> 50 wafers halkii 20-mm, iyada oo suurtagal ah khafiifinta 200-μm. Wakhtiga habayntu waxa uu hoos uga dhacayaa 10-15 maalmood (khadka fiilada) ilaa <20 min/wafer ee 8-inch crystals.

3. Iskaashiga Warshadaha

Kooxda Meta's Orion ayaa hormuud ka ahaa korsashada heerka-aragga ee SiC waveguide, taasoo dhiirigelisay maalgashiga R&D. Iskaashiga muhiimka ah waxaa ka mid ah:

• TankeBlue & MUDI Micro: Horumarinta wadajirka ah ee muraayadaha waveguide AR kala duwan.
• Jingsheng Mech, Longqi Tech, XREAL, & Kunyou Optoelectronics: Isbahaysiga Istaraatiijiga ah ee isku dhafka silsiladda sahayda AI/AR.

Saadaasha suuqa ayaa qiyaaseysa 500,000 unug AR-ku-saleysan oo SiC ah sanadkii 2027, iyaga oo cunaya 250,000 6-inji (ama 125,000 8-inji). Habkani waxa uu hoosta ka xariiqayaa doorka isbeddelka ee SiC ee jiilka soo socda ee AR optics.

XKH waxay ku takhasustay bixinta 4H-semi-insulating (4H-SEMI) SiC substrates oo leh dhexroor la beddeli karo oo u dhexeeya 2-inch ilaa 8-inch, oo loogu talagalay inay buuxiyaan shuruudaha codsiga gaarka ah ee RF, korontada, iyo AR/VR optics. Awoodeena waxaa ka mid ah sahayda mugga la isku halayn karo, hagaajinta saxda ah ( dhumucdiisuna, jihayn, dhammayn dusha sare ah), iyo habayn buuxda oo guriga dhexdiisa ah laga bilaabo korriinka crystal ilaa dhalaalid. Marka laga soo tago 4H-SEMI, waxaan sidoo kale bixinaa 4H-N-nooca, 4H/6H-P-nooca, iyo 3C-SiC substrates, taageeraya hal-abuurka semiconductor kala duwan iyo optoelectronic.