Iyada oo laga duulayo asalka kacaankii AI, muraayadaha AR ayaa si tartiib tartiib ah u galaya miyirka dadweynaha. Iyada oo ah qaab-dhismeed si aan kala go 'lahayn isugu daraya adduunyada casriga ah iyo kuwa dhabta ah, muraayadaha AR way ka duwan yihiin aaladaha VR iyagoo u oggolaanaya isticmaalayaasha inay si isku mid ah u arkaan sawirrada si dijitaal ah loo saadaaliyay iyo iftiinka deegaanka ee deegaanka. Si loo gaaro shaqadan laba-geesoodka ah - in sawirrada muraayadaha yar yar lagu soo bandhigo indhaha iyadoo la ilaalinayo gudbinta iftiinka dibadda - muraayadaha AR ee ku salaysan heerka indhaha ee silicon carbide (SiC) waxay adeegsadaan qaab-dhismeedka hagaha hirarka (hagaha iftiinka). Naqshaddani waxay ka faa'iidaysanaysaa milicsiga gudaha oo dhan si loo gudbiyo sawirrada, oo la mid ah gudbinta fiber-ka indhaha, sida lagu muujiyay jaantuska jaantuska.
Caadi ahaan, hal substrate oo 6-inji ah oo saafi ah oo nus-dabool ah ayaa soo saari kara 2 lammaane oo galaas ah, halka substrate 8-inji ah uu ku habboon yahay 3-4 lammaane. Qaadashada agabka SiC waxay bixisaa saddex faa'iido oo muhiim ah:
- Tusmada Refractive-ka Gaarka ah (2.7): Waxay awood u siineysaa >80° aragtida midabka buuxa leh (FOV) iyadoo la adeegsanayo hal lakab oo muraayad ah, taasoo meesha ka saareysa farshaxanka qaanso roobaadka ee caadiga ah ee naqshadaha AR-da caadiga ah.
- Hagaha hirarka ee saddex-midab leh (RGB): Wuxuu beddelaa isdulsaarayaasha hagaha hirarka ee lakabka badan leh, isagoo yareynaya cabbirka iyo miisaanka qalabka.
- Gudbinta kulaylka oo sareysa (490 W/m·K): Waxay yareysaa burburka indhaha ee uu keeno ururinta kulaylka.
Faa'iidooyinkan ayaa horseeday baahida suuqa ee xooggan ee muraayadaha AR ee ku salaysan SiC. SiC-ga heerka indhaha ee la isticmaalo wuxuu caadi ahaan ka kooban yahay kiristaalo nus-dabool ah oo saafi ah (HPSI), kuwaas oo shuruudaha diyaarinta adag ay gacan ka geystaan kharashka sare ee hadda jira. Sidaas darteed, horumarinta substrates-ka HPSI SiC waa muhiim.
1. Samaynta Budada SiC ee Nuska-Daboosha
Wax soo saarka baaxadda warshadaha ayaa inta badan isticmaala isku-darka is-fidinta heerkulka sare (SHS), oo ah geedi socod u baahan xakameyn taxaddar leh:
- Alaabta ceeriin: 99.999% budo kaarboon/silikon saafi ah oo cabbirkoodu yahay 10-100 μm.
- Nadiifnimada Crucible: Qaybaha Graphite-ka waxaa la mariyaa nadiifin heerkul sare leh si loo yareeyo faafinta wasakhda birta ah.
- Xakamaynta jawiga: argon-ka 6N-daahirnimada leh (oo leh nadiifiyayaal gudaha ah) wuxuu joojiyaa isku-darka nitrogen; raadadka gaasaska HCl/H₂ ayaa laga yaabaa in la soo bandhigo si loo yareeyo isku-dhafka boron loona yareeyo nitrogen-ka, inkastoo fiirsashada H₂ ay u baahan tahay habayn si looga hortago daxalka garaafka.
- Heerarka qalabka: Foornooyinka isku-dhafka ah waa inay gaaraan faakuumka saldhigga <10⁻⁴ Pa, iyadoo la raacayo habraacyo adag oo hubinaya daadashada.
2. Caqabadaha Kobaca Crystal
Kobaca HPSI SiC wuxuu la wadaagaa shuruudo daahirnimo oo la mid ah:
- Kaydka quudinta: Budada 6N+-daahirnimada SiC oo leh B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O oo ka hooseeya xadka xadka, iyo biraha alkali ee ugu yar (Na/K).
- Nidaamyada Gaaska: Isku darka 6N ee argon/hydrogen waxay xoojiyaan iska caabinta.
- Qalabka: Bamka molecular-ka ayaa hubiya faakiyuum aad u sarreeya (<10⁻⁶ Pa); daaweynta ka hor iyo nadiifinta nitrogen-ka ayaa muhiim ah.
2.1 Hal-abuurrada Habaynta Substrate-ka
Marka la barbardhigo silicon, wareegyada koritaanka ee dheer ee SiC iyo walbahaarka dabiiciga ah (oo sababa dildilaaca/jeexitaanka geeska) waxay u baahan yihiin habayn horumarsan:
- Jarista laysarka: Waxay kordhisaa wax soo saarka laga bilaabo 30 wafer (350 μm, miinshaar silig ah) ilaa >50 wafers halkii 20-mm boule, iyadoo suurtagal ah in 200-μm khafiifin karo. Waqtiga farsamayntu wuxuu hoos uga dhacayaa 10-15 maalmood (miinshaar silig ah) ilaa <20 daqiiqo/wafer kiristaal 8-inji ah.
3. Iskaashiga Warshadaha
Kooxda Orion ee Meta waxay hormuud ka ahayd korsashada mawjadaha SiC ee heerka indhaha, taasoo dhiirrigelisay maalgashiga cilmi-baarista iyo horumarinta. Iskaashiga muhiimka ah waxaa ka mid ah:
- TankeBlue & MUDI Micro: Horumarinta wadajirka ah ee muraayadaha hagaha hirarka ee AR.
- Jingsheng Mech, Longqi Tech, XREAL, iyo Kunyou Optoelectronics: Isbahaysi istaraatiiji ah oo loogu talagalay isdhexgalka silsiladda sahayda AI/AR.
Saadaasha suuqa waxay ku qiyaastay 500,000 oo unug oo AR ah oo ku salaysan SiC sannadkii marka la gaaro 2027, iyagoo isticmaalaya 250,000 oo ah 6-inji (ama 125,000 oo ah 8-inji). Jidkan ayaa hoosta ka xariiqaya doorka isbeddelka ee SiC ee indhaha AR ee jiilka soo socda.
XKH waxay ku takhasustay bixinta substrate-yada 4H-semi-insulating (4H-SEMI) SiC tayo sare leh oo leh dhexroor la beddeli karo oo u dhexeeya 2-inji ilaa 8-inji, oo loogu talagalay inay buuxiyaan shuruudaha codsiga gaarka ah ee RF, elektarooniga awoodda leh, iyo muraayadaha AR/VR. Awoodahayagu waxaa ka mid ah sahay mug oo la isku halleyn karo, habayn sax ah (dhumucda, jihada, dhammaystirka dusha sare), iyo habayn buuxda oo gudaha ah laga bilaabo koritaanka kiristaalka ilaa dhalaalinta. Marka laga soo tago 4H-SEMI, waxaan sidoo kale bixinnaa substrate-yada 4H-N, 4H/6H-P-nooca, iyo 3C-SiC, annagoo taageerna hal-abuurka semiconductor-ka kala duwan iyo optoelectronic-ka.
Waqtiga boostada: Agoosto-08-2025