Qalabka Semiconductor-ka waxa uu u horumaray saddex jiil oo isbeddel ah:
Gen 1-aad (Si/Ge) oo dhidibada u taagay qalabka Electronikada ee casriga ah.
Gen 2nd (GaAs/InP) wuxuu jabiyay caqabadaha indhaha elektiroonigga ah iyo kuwa soo noqnoqonaya si uu u xoojiyo kacaanka macluumaadka,
Gen 3rd (SiC/GaN) hadda waxa uu wax ka qabtaa tamarta iyo caqabadaha deegaanka ee xad dhaafka ah, isaga oo awood u siinaya dhexdhexaadnimada kaarboon iyo waagii 6G.
Horumarkani waxa uu daaha ka qaadayaa isbeddelka wax-ku-oolka ah ee wax-ku-oolka ah una beddelay takhasuska sayniska maadiga.
1. Semiconductors-ka Koowaad: Silikon (Si) iyo Germanium (Ge)
Sooyaalka Taariikheed
Sannadkii 1947-kii, Bell Labs waxa uu ikhtiraacay transistor-ka germanium-ka, isaga oo calaamadinaya waaberiga xilligii semiconductor-ka. Sannadihii 1950-aadkii, Silicon si tartiib tartiib ah ayey u bedeshay germanium oo ah aasaaska wareegyada isku dhafan (ICs) sababtoo ah lakabka oksaydhka deggan (SiO₂) iyo kayd dabiici ah oo badan.
Guryaha Alaabta
ⅠBandgap:
Germanium: 0.67eV (bandhis cidhiidhi ah, u nugul daadinta hadda, waxqabadka heerkul sare oo liita).
Silikoon: 1.12eV (bandgap aan toos ahayn, ku haboon wareegyada macquulka ah laakiin aan awood u lahayn iftiinka iftiinka).
Ⅱ,Faa'iidooyinka Silicon:
Dabiici ahaan waxay samaysaa oksaydh tayo sare leh (SiO₂), oo awood u siinaya MOSFET samaynta.
Qiimaha jaban iyo dhulku waa badan yahay (~ 28% ee ka kooban qolof ah).
Ⅲ,Xaddid:
Dhaqdhaqaaqa elektaroonigga hooseeya (kaliya 1500 cm²/(V·s)), xaddidaya waxqabadka soo noqnoqda sare.
U adkeysiga heerkulka daciifka ah (heerkulka shaqada ugu badan. ~ 150°C).
Codsiyada Muhiimka ah
Ⅰ,Wareegyada Isku dhafan (ICs):
CPU-yada, chips-yada xusuusta (tusaale, DRAM, NAND) waxay ku tiirsan yihiin silikon cufnaanta is dhexgalka sare.
Tusaale: Intel's 4004 (1971), Microprocessor-kii ugu horreeyay ee ganacsi, wuxuu isticmaalay 10μm tignoolajiyada silikon.
Ⅱ,Qalabka Korontada:
Thyristors hore iyo MOSFET-yada korantada yar (tusaale, saadka korantada PC) waxay ahaayeen kuwo silikon ku salaysan.
Caqabadaha & Waayeelnimada
Germanium ayaa meesha ka saaray daadad iyo degenaansho la'aan awgeed. Si kastaba ha ahaatee, xaddidaadda silikon ee optoelectronics iyo codsiyada awoodda sare leh ayaa kiciyay horumarinta semiconductors-ka xiga.
2 Semiconductors-ka labaad: Gallium Arsenide (GaAs) iyo Indium Phosphide (InP)
Asalkii Horumarka
Intii lagu jiray 1970-yadii-1980-meeyadii, meelaha soo ifbaxaya sida isgaarsiinta mobilada, shabakadaha fiber-ka indhaha, iyo tignoolajiyada dayax-gacmeedka ayaa abuuray baahi adag oo loogu talagalay agabka indhaha ee wax ku ool ah oo tayo sare leh. Tani waxay horseedday horumarinta semiconductors bandgap tooska ah sida GaAs iyo InP.
Guryaha Alaabta
Bandgap & Waxqabadka Optoelectronic:
GaAs: 1.42eV (bandhis toos ah, waxay suurtagelisaa qiiqa qiiqa-ku habboon lasers/LEDs).
InP: 1.34eV (ku habboon codsiyada mawjada dheer, tusaale ahaan, 1550nm isgaarsiinta fiber-optic).
Dhaqdhaqaaqa Electron:
GaAs wuxuu gaaraa 8500 cm²/(V·s), silikoon aad uga dheereeya (1500 cm²/(V·s)), taasoo ka dhigaysa mid aad ugu wanagsan habaynta signalada kala duwan ee GHz.
Khasaaro
lSubstrates jajaban: Way adagtahay in la soo saaro silikoon; Waferrada GaAs waxay ku kacayaan 10× ka badan.
lMa jiro oksaydh dhalad ah: Si ka duwan SiO₂ silikoon, GaAs/InP ma laha oksaydh deggan, taas oo caqabad ku ah samaynta cufnaanta sare ee IC.
Codsiyada Muhiimka ah
lDhamaadka hore ee RF:
Cod-weyneyaasha awoodda mobilada (PAs), transceivers dayax-gacmeedka (tusaale, transistor-yada HEMT-ku-saleysan ee GaAs).
lOptoelectronics:
Diodes Laser (CD/DVD drives), LEDs (casaan/infrared), modules fiber-optic (Laysarka InP).
lUnugyada Qorraxda ee Hawada Sare:
Unugyada GaAs waxay gaadhaan waxtarka 30% (marka loo eego ~ 20% silikoon), oo muhiim u ah satalaytka.
lDhalooyinka farsamada
Qiimaha sare wuxuu xaddidaa GaAs/InP ilaa codsiyada dhamaadka-sare ee niche, iyaga oo ka hortagaya inay beddelaan awoodda silikoon ee chips-ka macquulka ah.
Semiconductors-ka Saddexaad (Semiconductors-Bandgap): Silicon Carbide (SiC) iyo Gallium Nitride (GaN)
Darawalada Tignoolajiyada
Kacaanka Tamarta: Baabuurta korantada iyo isku dhafka tamarta la cusboonaysiin karo waxay u baahan yihiin qalab koronto oo waxtar leh.
Baahiyaha Soo noqnoqoshada Sare: Isgaarsiinta 5G iyo nidaamyada radar waxay u baahan yihiin soo noqnoqoshada sare iyo cufnaanta awoodda.
Deegaan aad u daran: Hawada hawada iyo matoorka warshaduhu waxay u baahan yihiin agab awood u leh inay xajiyaan heerkulka ka sarreeya 200°C.
Astaamaha Alaabta
Faa'iidooyinka Bandgap ballaaran:
lSiC: Bandgap of 3.26eV, burburka xoogga beerta koronto 10 × in silikon, awood u adkeysiga danab ka badan 10kV.
lGaN: Bandgap of 3.4eV, dhaqdhaqaaqa elektarooniga ah ee 2200 cm²/(V·s), heer sare ah waxqabadka soo noqnoqda.
Maareynta kulaylka:
Dareenka kulaylka ee SiC wuxuu gaaraa 4.9 W/(cm · K), seddex jeer ka fiican silikoon, taasoo ka dhigaysa mid ku habboon codsiyada awooda sare leh.
Caqabadaha Maaddada
SiC: Kobaca hal-crystal oo tartiib tartiib ah wuxuu u baahan yahay heerkul ka sarreeya 2000 ° C, taasoo keentay cilladaha waferka iyo kharashyada sare (waferka 6-inch SiC waa 20 × ka qaalisan silikon).
GaN: Ma laha substrate-dabiici ah, oo inta badan u baahan heteroepitaxy on sapphire, SiC, ama silikoon substrates, taasoo u horseeda arrimo is-waan-dhaaf ah.
Codsiyada Muhiimka ah
Korantada Korontada:
rogayaasha EV (tusaale, Tesla Model 3 waxa ay isticmaashaa SiC MOSFETs, iyada oo hagaajinaysa waxtarka 5-10%).
Saldhigyada dallacaadda degdega ah/adabiyeyaasha (Aaladaha GaN waxay awood 100W+ ku dallaci degdeg ah iyadoo cabbirka lagu dhimayo 50%).
Qalabka RF:
5G cod-weyneyaal korantada saldhiga saldhiga (GaN-on-SiC PAs waxay taageertaa soo noqnoqoshada mmWave).
Raadaarka militariga (GaN wuxuu bixiyaa 5 × cufnaanta awoodda GaAs).
Optoelectronics:
UV LEDs (Alaabada AlGaN ee loo isticmaalo jeermiska iyo ogaanshaha tayada biyaha).
Xaaladda Warshadaha iyo Muuqaalka Mustaqbalka
SiC ayaa gacanta ku haysa suuqa awoodda sare leh, oo leh qaybo-heer baabuur oo horayba ugu jiray wax soo saar ballaaran, in kasta oo kharashyadu ay yihiin caqabad.
GaN waxay si degdeg ah ugu fidaysaa macaamiisha elektiroonigga ah (dalacsiinta degdegga ah) iyo codsiyada RF, iyaga oo u gudbaya 8-inch wafers.
Qalabka soo baxaya sida gallium oxide (Ga₂O₃, bandgap 4.8eV) iyo dheeman (5.5eV) ayaa laga yaabaa inay sameeyaan "jiilka afraad" ee semiconductors, riixaya xadka korantada ee ka baxsan 20kV.
Wada-noolaanshaha iyo Wada-jirka ee Jiilka Semiconductor
Dhammaystir, Ma Beddelid:
Silikoonku wuxuu weli ku sii badan yahay chips-yada macquulka ah iyo elektiroonigga macaamiisha (95% suuqa semiconductor-ka adduunka).
GaAs iyo InP waxay ku takhasusaan soo noqnoqoshada sare iyo niches indhaha.
SiC/GaN waa kuwo aan lagu bedeli karin tamarta iyo codsiyada warshadaha.
Tusaalooyinka Is-dhexgalka Tignoolajiyada:
GaN-on-Si: Wuxuu ku daraa GaN substrates silikon qiimo jaban oo loogu dallaco degdega ah iyo codsiyada RF.
Qaybaha isku-dhafan ee SiC-IGBT: Hagaajinta waxtarka beddelka shabakadda.
Isbeddellada Mustaqbalka:
Is dhexgalka kala duwan: Isku-darka walxaha (tusaale, Si + GaN) hal jajab si loo dheellitiro waxqabadka iyo qiimaha.
Qalabka bandgap-ballaaran (tusaale, Ga₂O₃, dheeman) waxa laga yaabaa inay suurtageliso codsiyada ultra-high-voltage (>20kV) iyo xisaabinta tirada.
Wax soo saarka la xidhiidha
GaAs laser epitaxial wafer 4 inch 6 inch
12 inch SIC substrate silicon carbide dhexroorka darajada koowaad 300mm cabbir weyn 4H-N Ku habboon daminta kulaylka qalabka sare
Waqtiga boostada: Meey-07-2025