Substrate-ka silikoon carbide wuxuu u qaybsan yahay nooca dahaadhka ah ee nuska ah iyo nooca korantada. Waqtigan xaadirka ah, qeexitaanka guud ee alaabada substrate-ka silikoon carbide-ka-dahaaran waa 4 inji. Suuqa silikoon carbide ee wax-soo-saarka, qeexida wax soo saarka substrate-ka caadiga ah ee hadda jira waa 6 inji.
Codsiyada hoose ee goobta RF dartiis, substrates-ka SiC-da-dahaaran iyo agabka epitaxial waxa ay hoos imanayaan xakamaynta dhoofinta ee Waaxda Ganacsiga ee Maraykanka. Semi-dahaaran ee SiC sida substrate waa shayga la door biday ee GaN heteroepitaxy wuxuuna leeyahay rajooyin codsi oo muhiim ah goobta mikrowave. Marka la barbar dhigo isku-dheellitir la'aanta kristanta ee sapphire 14% iyo Si 16.9%, is-waafajinta crystal-ka ee agabyada SiC iyo GaN waa 3.4% oo keliya. Iyada oo ay weheliso dhaqdhaqaaqa kuleylka aadka u sarreeya ee SiC, waxtarka tamarta sare ee LED iyo GaN inta jeer ee soo noqnoqda iyo aaladaha microwave ee awoodda sare leh ee ay diyaarisay waxay leedahay faa'iidooyin aad u weyn radar, qalabka microwave awood sare leh iyo nidaamyada isgaarsiinta 5G.
Cilmi-baarista iyo horumarinta substrate-ka-dahaaran ee SiC ayaa had iyo jeer ahaa diiradda cilmi baarista iyo horumarinta substrate-ka SiC. Waxaa jira laba dhibaato oo waaweyn oo ku saabsan korriinka agabka SiC ee dahaaran badhkii:
1) Yaree wasakhda ku-deeqaha N ee ay soo bandhigtay graphite crucible, adsorption kulaylka iyo doping ee budada;
2) Iyadoo la hubinayo tayada iyo sifooyinka korantada ee crystal, xarun heer qoto dheer ayaa la soo bandhigay si loo magdhabo wasakhda heerka hoose ee haraaga ah ee dhaqdhaqaaqa korantada.
Waqtigan xaadirka ah, soosaarayaasha leh awoodda wax-soo-saarka ee SiC-da-dahaaran ayaa inta badan ah SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Karistaanka SiC ee wax-qabadka ah waxaa lagu gaaraa in nitrogen lagu duro jawiga sii kordhaya. Substrate-ka silikoon carbide ee wax-soo-saarka ah waxaa inta badan loo isticmaalaa soo saarista aaladaha korantada, aaladaha korantada silikoon carbide ee leh danab sare, heerkul sare, heerkul sare, khasaare yar iyo faa'iidooyin kale oo gaar ah, waxay si weyn u wanaajin doontaa isticmaalka hadda jira ee aaladaha tamarta silikoon. wax ku oolnimada beddelka, waxay leedahay saamayn weyn oo fog oo ku saabsan berrinkii beddelka tamarta hufan. Meelaha ugu muhiimsan ee laga codsado waa baabuurta koronto ku dallaca, tamar cusub oo sawir qaade ah, tareen tareen, xariijimo smart iyo wixii la mid ah. Sababtoo ah qulqulka hoose ee alaabta korantada ayaa inta badan ah qalabka korontada ku shaqeeya ee baabuurta korontada ku shaqeeya, sawir-qaadista iyo goobaha kale, rajada codsigu waa ka ballaaran tahay, soosaarayaashuna way badan yihiin.
Silicon carbide crystal nooca: Qaab dhismeedka caadiga ah ee ugu fiican ee 4H crystalline carbide silikon carbide waxaa loo qaybin karaa laba qaybood, mid waa kibik silicon carbide crystal nooca qaab dhismeedka sphalerite, oo loo yaqaan 3C-SiC ama β-SiC, iyo kan kale waa saddex geesoodka. ama qaab-dhismeedka dheeman ee qaab-dhismeedka muddada weyn, kaas oo ah nooca 6H-SiC, 4H-sic, 15R-SiC, iwm, oo si wada jir ah loo yaqaan α-SiC. 3C-SiC waxay leedahay faa'iidada iska caabbinta sare ee qalabka wax soo saarka. Si kastaba ha ahaatee, is-waafajinta sare ee u dhaxaysa Si iyo SiC lattice joogto ah iyo isugeynta fidinta kulaylka waxay u horseedi kartaa tiro badan oo cillado ah lakabka epitaxial 3C-SiC. 4H-SiC waxay leedahay karti weyn oo soo saarista MOSFETs, sababtoo ah koritaanka crystal iyo hababka kobaca lakabka epitaxial ayaa aad u fiican, iyo marka la eego dhaqdhaqaaqa elektaroonigga ah, 4H-SiC waxay ka sareysaa 3C-SiC iyo 6H-SiC, oo bixisa sifooyin microwave ka wanaagsan 4H -SiC MOSFETs.
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Waqtiga boostada: Jul-16-2024