Substrate-ka carbide-ka ee silicon waxaa loo qaybiyaa nooca semi-insulating iyo nooca conductive. Waqtigan xaadirka ah, qeexidda guud ee badeecadaha substrate-ka carbide-ka ee silicon-ka ee semi-insulated waa 4 inji. Suuqa carbide-ka silicon-ka ee conductive-ka ah, qeexidda guud ee badeecada substrate-ka ee caadiga ah ee hadda jira waa 6 inji.
Iyada oo ay ugu wacan tahay codsiyada hoose ee goobta RF, substrates-ka SiC ee nus-daboolan iyo walxaha epitaxial-ka ayaa hoos yimaada xakamaynta dhoofinta ee Waaxda Ganacsiga ee Mareykanka. SiC ee nus-daboolan oo ah substrate-ka ayaa ah walaxda ugu doorbidan GaN heteroepitaxy waxayna leedahay rajooyin codsi oo muhiim ah oo ku saabsan goobta microwave-ka. Marka la barbardhigo isku-dheelitir la'aanta kiristaalka ee safayr 14% iyo Si 16.9%, isku-dheelitir la'aanta kiristaalka ee agabka SiC iyo GaN waa 3.4% oo keliya. Iyadoo lala kaashanayo kulaylka aadka u sarreeya ee SiC, LED-ka waxtarka sare leh ee tamarta sare iyo aaladaha microwave-ka ee GaN ee soo noqnoqda sare iyo awoodda sare leh ee ay diyaarisay waxay leeyihiin faa'iidooyin waaweyn oo ku saabsan radar, qalabka microwave-ka awoodda sare leh iyo nidaamyada isgaarsiinta 5G.
Cilmi-baarista iyo horumarinta substrate-ka SiC ee nus-insulated-ka ah ayaa had iyo jeer diiradda saarta cilmi-baarista iyo horumarinta substrate-ka keli ah ee SiC. Waxaa jira laba dhibaato oo ugu waaweyn oo ku saabsan beerista agabka SiC ee nus-insulated-ka ah:
1) Yaree wasakhda deeq-bixiyaha N ee ay keento graphite crucible, nuugista kulaylka iyo daawada budada ah;
2) Iyadoo la hubinayo tayada iyo sifooyinka korontada ee kiristaalka, xarun heer qoto dheer ah ayaa la soo bandhigayaa si loogu magdhabo wasakhda heerka gacmeed ee harsan iyadoo la adeegsanayo dhaqdhaqaaq koronto.
Waqtigan xaadirka ah, soosaarayaasha leh awoodda wax soo saarka SiC ee nus-daboolan waa inta badan SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Crystal-ka SiC ee gudbiya korontada waxaa lagu gaaraa iyadoo lagu durayo nitrogen jawiga sii kordhaya. Substrate-ka silikoon ee gudbiya korontada waxaa inta badan loo isticmaalaa soo saarista aaladaha korontada, aaladaha korontada silikoon ee silikoon ee leh danab sare, koronto sare, heerkul sare, soo noqnoqosho sare, khasaaro hoose iyo faa'iidooyin kale oo gaar ah, waxay si weyn u horumarin doontaa isticmaalka jira ee aaladaha korontada ku salaysan ee ku salaysan silikoon waxtarka beddelka tamarta, waxay leedahay saameyn weyn oo ballaaran oo ku saabsan goobta beddelka tamarta hufan. Meelaha ugu muhiimsan ee codsiga waa gawaarida korontada ku shaqeeya/tuulooyinka dallacaadda, tamarta cusub ee sawir-qaadista, gaadiidka tareenka, shabakadda casriga ah iyo wixii la mid ah. Sababtoo ah hoos u dhaca alaabada gudbisa korontada ayaa inta badan ah aaladaha korontada ku shaqeeya ee baabuurta korontada ku shaqeeya, qalabka sawir-qaadista iyo meelaha kale, rajada codsigu waa mid ballaaran, soosaarayaashuna way badan yihiin.
Nooca kiristaalka carbide-ka ee silikoon: Qaab-dhismeedka caadiga ah ee ugu fiican ee kaarbeydhka silicon-ka ee 4H waxaa loo qaybin karaa laba qaybood, mid waa nooca kiristaalka carbide-ka ee silikoon cubic ee qaab-dhismeedka sphalerite, oo loo yaqaan 3C-SiC ama β-SiC, kan kalena waa qaab-dhismeedka lix-geesoodka ah ama dheemanka ee qaab-dhismeedka muddada weyn, kaas oo caadi u ah 6H-SiC, 4H-sic, 15R-SiC, iwm., oo si wadajir ah loogu yaqaan α-SiC. 3C-SiC waxay leedahay faa'iidada iska caabinta sare ee qalabka wax soo saarka. Si kastaba ha ahaatee, isku dheelitir la'aanta sare ee u dhaxaysa joogtada shabagga Si iyo SiC iyo isku-dhafka ballaarinta kulaylka waxay horseedi kartaa tiro badan oo cillado ah oo ku jira lakabka epitaxial-ka 3C-SiC. 4H-SiC waxay leedahay awood weyn oo ay ku soo saarto MOSFET-yada, sababtoo ah korriinkeeda kiristaalka iyo hababka koritaanka lakabka epitaxial ayaa aad u fiican, marka la eego dhaqdhaqaaqa elektarooniga, 4H-SiC waxay ka sarraysaa 3C-SiC iyo 6H-SiC, taasoo siinaysa astaamo microwave oo wanaagsan 4H-SiC MOSFETs.
Haddii ay jirto xadgudub, la xiriir tirtir
Waqtiga boostada: Luulyo-16-2024