Sapphire waa hal crystal oo alumina ah, waxaa iska leh nidaamka crystal tripartite, qaab-dhismeedka laba geesoodka ah, ay qaab-dhismeedka crystal ka kooban yahay saddex atamka oxygen iyo laba atamka aluminium ee nooca bond covalent, habaysan aad u dhow, oo leh silsilad isku xirnaanta xoog iyo tamar dabin, halka ay crystal gudaha ku dhawaad wax wasakh ah ama cillado, sidaas darteed waxa uu leeyahay dahaarka koronto aad u fiican, dabeecadda hufnaanta sare. Si ballaaran loo isticmaalo sida daaqadaha indhaha iyo agabka hoose ee waxqabadka sare. Si kastaba ha ahaatee, qaab-dhismeedka molecular ee safayr waa mid adag oo waxaa jira anisotropy, iyo saamaynta guryaha u dhigma sidoo kale waa mid aad u kala duwan ee processing iyo isticmaalka jihooyinka crystal kala duwan, sidaas darteed isticmaalka sidoo kale waa ka duwan yahay. Guud ahaan, sapphire substrates ayaa laga heli karaa jihooyinka C, R, A iyo M.
Codsiga eeC-diyaarad safayr ah
Gallium nitride (GaN) oo ah semiconductor jiilka saddexaad ee bandgap ballaaran, wuxuu leeyahay farqi toos ah oo toos ah, dammaanad atomikada xooggan, kuleylka kuleylka sare, xasilloonida kiimikada wanaagsan (ku dhawaad aanu daxaleynin aashito kasta) iyo awood xoog leh oo ka-hortagga shucaaca, waxayna leedahay rajo ballaaran oo ku aaddan adeegsiga optoelectronics, heerkulka sare iyo aaladaha awoodda iyo aaladaha microwave ee soo noqnoqda. Si kastaba ha noqotee, sababtoo ah barta dhalaalaysa sare ee GaN, way adagtahay in la helo maaddooyinka crystal-ka ah ee waaweyn, sidaas darteed habka caadiga ah waa in la sameeyo korriinka heteroepitaxy ee substrates kale, kaas oo leh shuruudo sare oo loogu talagalay alaabta substrate.
Marka la barbardhigosubstrate sapphirewejiyada kale ee crystals, heerka ismaandhaafka joogtada ah ee shabka ee u dhexeeya diyaaradda C-diyaarada (<0001> orientation) wafer sapphire iyo filimada lagu xareeyay kooxaha Ⅲ-Ⅴ iyo Ⅱ-Ⅵ (sida GaN) waa mid aad u yar, iyo heerka ismaandhaafka joogtada ah ee u dhexeeya labada iyofilimada AlNtaas oo loo isticmaali karo sida lakabka kaydinta ayaa xitaa ka sii yar, waxayna buuxisaa shuruudaha iska caabinta heerkulka sare ee geeddi-socodka crystallization GaN. Sidaa darteed, waa maaddo substrate caadi ah oo loogu talagalay koritaanka GaN, kaas oo loo isticmaali karo in lagu sameeyo cad / buluug / cagaar, diodes laser, qalabka infrared iyo wixii la mid ah.
Waxaa xusid mudan in filimka GaN koray on substrate C-diyaaradaha safayr koraan weheliyaan dhidibka cirifka, taas oo ah, jihada of dhidibka C, taas oo ma aha oo kaliya habka koritaanka baaluq iyo habka epitaxy, qiimo jaban, guryaha xasilloon iyo kiimikaad, laakiin sidoo kale waxqabadka processing ka fiican. Atamyada waferka sapphire-ka ee ku jihaysan C waxa ay ku xidhan yihiin habayn O-al-al-o-al-O, halka kiristaalada sapphire-ku jihaysan M-oriented ay ku xidhan yihiin al-O-al-O. Sababtoo ah Al-Al wuxuu leeyahay tamar hoose oo isku xirnaanta iyo isku xirnaanta daciifka ah marka loo eego Al-O, marka la barbardhigo muraayadaha M-oriented iyo A-oriented sapphire, farsamaynta C-sapphire waa inta badan si loo furo furaha Al-Al, taas oo sahlan in la farsameeyo, oo la helo tayada sare ee dusha sare, ka dibna la helo gallium nitride tayo sare leh oo tayo sare leh, taas oo hagaajin karta tayada sare ee iftiinka iftiinka. Dhanka kale, filimada lagu koray dhinaca C-axis waxay leeyihiin saameyn iskeed ah iyo piezoelectric polarization, taasoo keentay in koronto gudaha ah oo xoog leh gudaha filimada (lakabka firfircoon ee quantum Wells), kaas oo si weyn u yareynaya waxtarka iftiinka ee filimada GaN.
A-diyaarad safayr ahcodsi
Sababtoo ah waxqabadkeeda dhammaystiran ee heer sare ah, gaar ahaan gudbinta ugu fiican, sapphire hal crystal ayaa kor u qaadi karta saamaynta dhexda infrared, oo noqota qalab daaqada dhexe ah oo ku habboon, kaas oo si ballaaran loo isticmaalo qalabka sawir-qaadista ee milatariga. Meesha Sapphire ay tahay diyaarad cirif ah (C diyaarad) oo ku taal jihada caadiga ah ee wejiga, waa dusha sare ee aan cirifka ahayn. Guud ahaan, tayada A-oriented crystal sapphire ayaa ka fiican kan C-oriented crystal, oo leh kala-bax yar, qaab-dhismeedka Mosaic yar iyo qaab-dhismeed crystal ah oo dhamaystiran, sidaas darteed waxay leedahay waxqabadka gudbinta iftiinka. Isla mar ahaantaana, habka isku xidhka atomiiga ee Al-O-Al-O ee diyaaradda a, engegnaanta iyo xidhashada iska caabinta A-oriented sapphire ayaa aad uga sarreeya kan sapphire-ku-jeedsan. Sidaa darteed, chips-jihada A waxaa inta badan loo isticmaalaa sida alaabta daaqadaha; Intaa waxaa dheer, sapphire A waxa kale oo uu leeyahay dielectric labis joogto ah iyo guryaha dahaarka sare, sidaas darteed waxaa lagu dabaqi karaa in technology hybrid microelectronics hybrid, laakiin sidoo kale ee koritaanka kirishbooyada heer sare ah, sida isticmaalka TlBaCaCuO (TbBaCaCuO), Tl-2212, koritaanka heterogeneous epitaxial superconducting films cephisite. Si kastaba ha ahaatee, sidoo kale sababtoo ah tamarta curaarta weyn ee Al-O, way adagtahay in la habeeyo.
CodsigaR/M diyaarad sapphire wafer
Diyaaradda R-du waa dusha sare ee sapphire-ka, sidaas darteed isbeddelka booska R-diyaarada ee aaladda sapphire waxay siinaysaa qalab kala duwan oo makaanikada, kulaylka, korantada iyo indhaha ah. Guud ahaan, substrate sapphire R-korka ayaa doorbidaya dejinta heteroepitaxial ee silicon, inta badan semiconductor, microwave iyo microelectronics codsiyada wareegga isku dhafan, ee soo saarista rasaasta, qaybaha kale ee superconducting, iska caabbinta sare, gallium arsenide ayaa sidoo kale loo isticmaali karaa kobaca substrate-ka nooca R. Waqtigan xaadirka ah, oo leh caan ka mid ah taleefannada casriga ah iyo nidaamyada kumbuyuutarrada kumbuyuutarrada, R-face sapphire substrate ayaa beddelay qalabka SAW ee hadda jira ee loo isticmaalo taleefannada casriga ah iyo kombuyuutarrada tablet-ka ah, siinta substrate qalabyada hagaajin kara waxqabadka.
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Waqtiga boostada: Jul-16-2024