Sapphire waa hal crystal oo aluminium ah, waxaa iska leh nidaamka crystal tripartite, qaab dhismeedka laba geesoodka ah, qaab dhismeedka crystal ka kooban yahay saddex atamka oxygen iyo laba atamka aluminium ee nooca bond covalent, habaysan aad u dhow, oo leh silsilad isku xidhan oo xoog leh iyo tamar tamar, halka ay gudaha crystal ku dhawaad wax nijaas ah ama cillado, sidaas darteed waxa ay leedahay dahaarka koronto aad u fiican, hufnaan, conductivity kaamerada wanaagsan iyo sifooyinka qallafsanaan sare. Si ballaaran loo isticmaalo sida daaqadaha indhaha iyo agabka hoose ee waxqabadka sare. Si kastaba ha ahaatee, qaab-dhismeedka molecular ee safayr waa mid adag oo waxaa jira anisotropy, iyo saamaynta guryaha u dhigma sidoo kale waa mid aad u kala duwan ee processing iyo isticmaalka jihooyinka crystal kala duwan, sidaas darteed isticmaalka sidoo kale waa ka duwan yahay. Guud ahaan, sapphire substrates ayaa laga heli karaa jihooyinka C, R, A iyo M.
Codsiga eeC-diyaarad safayr ah
Gallium nitride (GaN) oo ah semiconductor jiilka seddexaad ee bandgap ballaaran, wuxuu leeyahay faraq ballaaran oo toos ah, dammaanad atomikada xooggan, kuleylka kuleylka sare, xasilloonida kiimikada wanaagsan (ku dhawaad aan daxaleynin asiidh kasta) iyo awood xooggan oo ka-hortagga shucaaca, waxayna leedahay rajooyin ballaaran Codsiga optoelectronics, heerkulka sare iyo qalabka korontada iyo inta jeer ee qalabka microwave sare. Si kastaba ha noqotee, sababtoo ah barta dhalaalaysa sare ee GaN, way adagtahay in la helo maaddooyinka crystal-ka ah ee waaweyn, sidaas darteed habka caadiga ah waa in la sameeyo korriinka heteroepitaxy ee substrates kale, kaas oo leh shuruudo sare oo loogu talagalay alaabta substrate.
Marka la barbardhigosubstrate sapphirewejiyada kale ee crystal, heerka ismaandhaafka joogtada ah ee shabka ee u dhexeeya diyaaradda C-diyaaradda (<0001> hanuuninta) wafer sapphire iyo filimada lagu xareeyay kooxaha Ⅲ-Ⅴ iyo Ⅱ-Ⅵ (sida GaN) waa mid aad u yar, iyo ismaandhaaf joogto ah heerka u dhexeeya labada iyo kufilimada AlNtaas oo loo isticmaali karo sida lakabka kaydinta ayaa xitaa ka sii yar, waxayna buuxisaa shuruudaha iska caabinta heerkulka sare ee geeddi-socodka crystallization GaN. Sidaa darteed, waa maaddo substrate caadi ah oo loogu talagalay koritaanka GaN, kaas oo loo isticmaali karo in lagu sameeyo cad / buluug / cagaar, diodes laser, qalabka infrared iyo wixii la mid ah.
Waxaa mudan in la xuso in filimka GaN ee ku koray substrate C-plane sapphire uu ku korayo dhidibka cirifka, taas oo ah, jihada dhidibka C, taas oo aan ahayn oo kaliya habka koritaanka baaluq iyo habka epitaxy, qiimo jaban, xasilloonida jirka. iyo sifooyinka kiimikaad, laakiin sidoo kale waxqabad ka baaraandegid oo wanaagsan. Atamyada waferka sapphire-ka ee ku jihaysan C waxa ay ku xidhan yihiin habayn O-al-al-o-al-O, halka kiristaalada sapphire-ku jihaysan M-oriented ay ku xidhan yihiin al-O-al-O. Sababtoo ah Al-Al waxa uu leeyahay tamar isku xidhid hoose iyo xidhidh daciif ah marka loo eego Al-O, marka la barbar dhigo kiristaalo M-oriented iyo A-oriented sapphire, farsamaynta ee C-sapphire inta badan waa in la furo furaha Al-Al, taas oo ay fududahay in la farsameeyo. , oo waxay heli kartaa tayada sare ee dusha sare, ka dibna waxay heli kartaa tayada gallium nitride epitaxial oo ka sii fiican, taas oo hagaajin karta tayada iftiinka ultra-sare ee caddaan / buluug. Dhanka kale, filimada lagu koray dhinaca C-axis waxay leeyihiin saameyn iskeed ah iyo piezoelectric polarization, taasoo keentay in koronto gudaha ah oo xoog leh gudaha filimada (lakabka firfircoon ee quantum Wells), kaas oo si weyn u yareynaya waxtarka iftiinka ee filimada GaN.
A-diyaarad safayr ahcodsi
Sababtoo ah waxqabadkeeda dhammaystiran ee heer sare ah, gaar ahaan gudbinta ugu fiican, sapphire hal crystal ayaa kor u qaadi karta saamaynta dhexda infrared, oo noqota qalab daaqada dhexe ah oo ku habboon, kaas oo si ballaaran loo isticmaalo qalabka sawir-qaadista ee milatariga. Meesha Sapphire ay tahay diyaarad cirif ah (C diyaarad) oo ku taal jihada caadiga ah ee wejiga, waa dusha sare ee aan cirifka ahayn. Guud ahaan, tayada A-oriented crystal sapphire ayaa ka fiican kan C-oriented crystal, oo leh kala-bax yar, qaab-dhismeedka Mosaic yar iyo qaab-dhismeed crystal ah oo dhamaystiran, sidaas darteed waxay leedahay waxqabadka gudbinta iftiinka. Isla mar ahaantaana, habka isku xidhka atomiiga ee Al-O-Al-O ee diyaaradda a, engegnaanta iyo xidhashada iska caabinta A-oriented sapphire ayaa aad uga sarreeya kan sapphire-ku-jeedsan. Sidaa darteed, chips-jihada A waxaa inta badan loo isticmaalaa sida alaabta daaqadaha; Intaa waxaa dheer, sapphire A waxa kale oo uu leeyahay dielectric joogto ah iyo guryaha dahaarka sare, sidaas darteed waxaa lagu dabaqi karaa in technology hybrid microelectronics, laakiin sidoo kale koritaanka kirishbooyada heer sare ah, sida isticmaalka TlBaCaCuO (TbBaCaCuO), Tl-2212, koritaanka. ee filimada kala duwan ee epitaxial superconducting on cerium oxide (CeO2) sapphire substrate ka kooban. Si kastaba ha ahaatee, sidoo kale sababtoo ah tamarta curaarta weyn ee Al-O, way adagtahay in la habeeyo.
CodsigaR/M diyaarad sapphire wafer
Diyaaradda R-du waa dusha sare ee sapphire-ka, sidaas darteed isbeddelka booska R-diyaarada ee aaladda sapphire waxay siinaysaa qalab kala duwan oo makaanikada, kulaylka, korantada iyo indhaha ah. Guud ahaan, substrate sapphire R-korka ayaa doorbidaya dejinta heteroepitaxial ee silicon, inta badan semiconductor, microwave iyo microelectronics codsiyada wareegga isku dhafan, soo saarista rasaasta, qaybaha kale ee superconducting, iska caabbinta sare ee caabbinta, gallium arsenide sidoo kale waxaa loo isticmaali karaa R- nooca koritaanka substrate. Waqtigan xaadirka ah, oo leh caan ka mid ah taleefannada casriga ah iyo nidaamyada kumbuyuutarrada kumbuyuutarrada, R-face sapphire substrate ayaa beddelay qalabka SAW ee hadda jira ee loo isticmaalo taleefannada casriga ah iyo kombuyuutarrada tablet-ka ah, siinta substrate qalabyada hagaajin kara waxqabadka.
Haddii ay jirto xad-gudub, la xiriir tirtir
Waqtiga boostada: Jul-16-2024