Epi-lakab

200mm 8inch GaN oo ku dul yaal sapphire-lakabka wafer substrate-ka
GaN ee muraayadda 4-inch: Ikhtiyaarada muraayada la beddeli karo oo ay ku jiraan JGS1, JGS2, BF33, iyo Quartz caadiga ah
AlN-on-NPSS Wafer: Lakabka Aluminium Nitride Waxqabadka Sare ee Sapphire Substrate-ka aan Toosanayn ee Heerkulka Sare, Awood Sare, iyo Codsiyada RF
Gallium Nitride oo ku yaal Wafer Silicon 4inch 6inch Tailored Si Substrate Orientation, Resistivity, iyo N-nooca/P-nooca Options
GaN-on-SiC Epitaxial Wafers La Habeeyay (100mm, 150mm) - Xulashooyinka Substrate SiC ee Badan (4H-N, HPSI, 4H/6H-P)
GaN-on-Diamond Wafers 4inch 6inj Wadarta dhumucda epi-dhammed (micron) 0.6 ~ 2.5 ama loo habeeyey Codsiyada Soo noqnoqoshada Sare
GaAs awoodda sare ee epitaxial wafer substrate gallium arsenide wafer awood leysarka dhererka hirarka 905nm ee daaweynta laysarka
InGaAs substrate wafer substrate PD Array sawir-qaade ayaa loo isticmaali karaa LiDAR
2inch 3inch 4inch InP epitaxial wafer substrate APD iftiinka isgaarsiinta fiber optic ama LiDAR
Substrate-ka-Insulator Substrate SOI wafer saddex lakab oo ah Microelectronics iyo Soo noqnoqoshada Raadiyaha
SOI wafer insulator on silikoon 8-inch iyo 6-inch SOI (Silicon-On-Insulator) wafers
6inch SiC Epitaxyy wafer N/P nooca aqbal habaysan

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