SiC
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12 inch SIC substrate silicon carbide dhexroorka darajada koowaad 300mm cabbir weyn 4H-N Ku habboon daminta kulaylka qalabka sare
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8 inch SiC silicon carbide wafer 4H-N nooca 0.5mm wax soo saarka darajada cilmi baarista substrate caadadii
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HPSI SiC wafer dia: dhumucdiisuna tahay 3inch:350um± 25 µm ee Korantada Korontada
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3inch Nadiifin Sare Semi-Insulating (HPSI) SiC wafer 350um Dummy fasalka koowaad
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Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub
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8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucdiisuna tahay
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba jeer oo La Sifeeyay oo La Sifeeyay Fasalka Koowaad
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HPSI SiC Wafer ≥90% Gudbinta Aragtida ee muraayadaha AI/AR
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Silicon Carbide (SiC) Substrate-dahaaran-sare ee muraayadaha Ar
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4H-SiC Epitaxial Wafers ee MOSFET-yada Korantada aadka u Sareeya (100-500 μm, 6 inch)
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SICOI (Silicon Carbide on Insulator) Wafers SiC Film on Silicon
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Silicon Carbide (SiC) Substrate Single-Crystal - 10 × 10mm Wafer