SiC
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12 inji SIC substrate silicon carbide dhexroorka heerka ugu sarreeya 300mm cabbir weyn 4H-N Ku habboon kala-baxa kulaylka qalabka awoodda sare leh
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8 inji SiC silicon carbide wafer 4H-N nooca 0.5mm heerka wax soo saarka heerka cilmi-baarista substrate gaar ah oo la safeeyey
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Wafer HPSI SiC ah: 3 inji dhumucdiisuna tahay: 350um± 25 µm oo loogu talagalay Korontada Elektarooniga ah
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3 inji Nadiifnimo Sare oo ah Semi-dahaarka (HPSI) Wafer SiC ah oo 350um ah oo ah darajada ugu sarreysa
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Nooca P-nooca SiC substrate SiC wafer Dia2inch badeecad cusub
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8 inji 200mm Silicon Carbide SiC Wafers 4H-N Nooca wax soo saarka 500um dhumucdiisuna waa
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba-laaban oo la safeeyey oo leh Heerka Sare ee Mos
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Wafer 12-Inch ah oo loogu talagalay muraayadaha AR
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Wafer HPSI SiC ≥90% Heerka Gudbinta Indhaha ee Muraayadaha AI/AR
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Substrate-ka Silikoon-ka-daboolaya (SiC) Nadiifin Sare oo loogu talagalay Muraayadaha Ar
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Wafers Epitaxial ah oo 4H-SiC ah oo loogu talagalay MOSFET-yada Tamarta Aad u Sareysa (100–500 μm, 6 inji)
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SICOI (Silicon Carbide oo ku jira Insulator) Wafers SiC Film ON Silicon