HPSI SiC Wafer ≥90% Gudbinta Aragtida ee muraayadaha AI/AR

HPSI SiC Wafer ≥90% Gudbinta Muuqaalka ee muraayadaha AI/AR

Sharaxaad Gaaban:

Halbeegga	Darajo	Substrate 4-inch	Substrate 6-inch
Dhexroorka	Darajada Z/D Darajada	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Nooca Poly-ga ah	Darajada Z/D Darajada	4H	4H
Dhumucda	Darajada Z	500 μm ± 15 μm	500 μm ± 15 μm
Dhumucda	D Darajada	500 μm ± 25 μm	500 μm ± 25 μm
Hanuuninta Wafer	Darajada Z/D Darajada	Dhinaca dhidibka: <0001> ± 0.5°	Dhinaca dhidibka: <0001> ± 0.5°
Cufnaanta Micropipe	Darajada Z	≤ 1 cm²	≤ 1 cm²
Cufnaanta Micropipe	D Darajada	≤ 15 cm²	≤ 15 cm²
iska caabin	Darajada Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
iska caabin	D Darajada	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Email noogu soo dir

Astaamaha

Hordhaca Muhiimka ah: Doorka HPSI SiC Wafers ee muraayadaha AI/AR

HPSI (High-Purity Semi-Insulating) Waferrada Silicon Carbide waa wafers khaas ah oo lagu garto iska caabin sare (> 10⁹ Ω·cm) iyo cufnaanta cilladaha aad u hooseeya. Muraayadaha AI / AR, waxay ugu horreyn u adeegaan sidii agabka aasaasiga ah ee muraayadaha muraayadaha waveguide indhaha, wax ka qabashada cilad-xumada la xiriirta agabka indhaha ee dhaqameed marka loo eego qaababka khafiifka ah iyo iftiinka, kuleylka kuleylka, iyo waxqabadka indhaha. Tusaale ahaan, muraayadaha AR ee isticmaalaya muraayadaha waveguide ee SiC waxay gaari karaan aragti aad u ballaaran (FOV) oo ah 70 ° -80 °, iyadoo yareyneysa dhumucda lakabka lenska kaliya 0.55mm iyo culeyska 2.7g oo keliya, taasoo si weyn kor ugu qaadeysa xirashada raaxada iyo i dhexgalka muuqaalka.

b0968b8d-1b0f-4dfe-8fce-865d38404ba5_副本_副本

Astaamaha Muhiimka ah: Sida Walxaha SiC uu Awood u siiyo Naqshadaynta Muraayadaha AI/AR

Tilmaanta Refractive High iyo Hagaajinta Waxqabadka indhaha

Tusmada dib-u-celinta ee SiC (2.6-2.7) waxay ku dhowdahay 50% inay ka sarreyso dhalada dhaqameed (1.8-2.0). Tani waxay u oggolaaneysaa qaab-dhismeedyada hagaha mawjadaha khafiifka ah oo waxtar leh, si weyn u ballaarinaya FOV. Tusmada dib-u-celinta sare waxay sidoo kale ka caawisaa xakamaynta "saamaynta qaanso-roobaadka" ee caanka ku ah waveguides-ka kala duwan, hagaajinta nadiifnimada sawirka.

Kartida Maareynta Kulaylka Gaarka ah

Iyada oo kuleylku uu aad u sarreeyo sida 490 W / m · K (ku dhow kan naxaasta), SiC waxay si dhakhso ah u baabi'in kartaa kulaylka ay dhaleen moodooyinka bandhiga Micro-LED. Tani waxay ka hortagtaa hoos u dhaca waxqabadka ama gabowga qalabka sababtoo ah heerkulka sare, hubinta nolosha batteriga dheer iyo xasilloonida sare.

Xoogga Makaanikada iyo Joogteynta

SiC waxay leedahay adkaanta Mohs ee 9.5 (labaad kaliya ilaa dheeman), oo bixisa iska caabin xoqan oo gaar ah, taasoo ka dhigaysa mid ku habboon muraayadaha macaamiisha ee inta badan la isticmaalo. Qalafsanaanteeda dusha sare waxaa lagu xakameyn karaa Ra <0.5 nm, iyada oo hubinaysa in luminta hoose iyo mid aad u heersaraysa gudbinta iftiinka mawjadaha.

Waafaqsanaanta Hantida Korontada

Iska caabbinta HPSI SiC (> 10⁹ Ω·cm) waxay caawisaa ka hortagga faragelinta calaamadaha. Waxa kale oo ay u adeegi kartaa sida qalab awood wax ku ool ah, iyada oo wanaajinaysa modules-ka maareynta awoodda muraayadaha AR.

Tilmaamaha Codsiga Koowaad

Qaybaha indhaha ee muhiimka ah ee muraayadaha AI/ARs

Lenses Waveguide Diffractive: Substrates SiC waxaa loo isticmaalaa in lagu abuuro mowjadaha muraayadaha indhaha ee aadka u dhuuban ee taageeraya FOV weyn iyo baabi'inta saamaynta qaanso-roobaadka.
Taarikada Daaqadaha iyo Prisms:Iyadoo loo marayo goynta iyo turxaan bixinta habaysan, SiC waxa loo habayn karaa daaqadaha ilaaliya ama muraayadaha indhaha ee muraayadaha AR, kor u qaadida gudbinta iftiinka iyo xidhashada caabbinta.

Codsiyada la kordhiyay ee goobaha kale

Korontada Korontada: Waxaa loo istcimaalaa soo noqnoqoshada sare, xaaladaha awoodda sare leh sida rogoyaasha baabuurta tamarta cusub iyo kontaroolada gawaarida warshadaha.
Quantum Optics: Waxay u shaqeysaa sidii xarun u ah xarumaha midabka, oo loo isticmaalo substrates isgaarsiinta tirada iyo aaladaha dareenka.

4 inch & 6 inch HPSI SiC Substrate Barbardhigaan

Halbeegga	Darajo	Substrate 4-inch	Substrate 6-inch
Dhexroorka	Darajada Z/D Darajada	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Nooca Poly-ga ah	Darajada Z/D Darajada	4H	4H
Dhumucda	Darajada Z	500 μm ± 15 μm	500 μm ± 15 μm
Dhumucda	D Darajada	500 μm ± 25 μm	500 μm ± 25 μm
Hanuuninta Wafer	Darajada Z/D Darajada	Dhinaca dhidibka: <0001> ± 0.5°	Dhinaca dhidibka: <0001> ± 0.5°
Cufnaanta Micropipe	Darajada Z	≤ 1 cm²	≤ 1 cm²
Cufnaanta Micropipe	D Darajada	≤ 15 cm²	≤ 15 cm²
iska caabin	Darajada Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
iska caabin	D Darajada	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Hanuuninta Flat Primary	Darajada Z/D Darajada	(10-10) ± 5.0°	(10-10) ± 5.0°
Dhererka Guriga Aasaasiga ah	Darajada Z/D Darajada	32.5 mm ± 2.0 mm	Darajo
Dhererka Guriga Labaad	Darajada Z/D Darajada	18.0 mm ± 2.0 mm	-
Ka saarida Edge	Darajada Z/D Darajada	3 mm	3 mm
LTV / TTV / Qaanso / Warp	Darajada Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Qaanso / Warp	D Darajada	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
qallafsanaan	Darajada Z	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
qallafsanaan	D Darajada	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Dildilaaca Edge	D Darajada	Aagga isugeynta ≤ 0.1%	Dhererka isugeynta ≤ 20 mm, hal ≤ 2 mm
Meelaha Polytype	D Darajada	Aagga isugeynta ≤ 0.3%	Aagga isugeynta ≤ 3%
Kaarboon Muuqaal ah	Darajada Z	Aagga isugeynta ≤ 0.05%	Aagga isugeynta ≤ 0.05%
Kaarboon Muuqaal ah	D Darajada	Aagga isugeynta ≤ 0.3%	Aagga isugeynta ≤ 3%
Xakamaynta dusha sare ee Silicon	D Darajada	5 waa la oggol yahay, mid kasta ≤1mm	Dhererka isugeynta ≤ 1 x dhexroor
Chips-ka Edge	Darajada Z	Midna lama ogola (ballaadhka iyo qoto dheer ≥0.2mm)	Midna lama ogola (ballaadhka iyo qoto dheer ≥0.2mm)
Chips-ka Edge	D Darajada	7 waa la oggol yahay, mid kasta ≤1mm	7 waa la oggol yahay, mid kasta ≤1mm
Kala-baxa Xadhkaha Isku-xidhka	Darajada Z	-	≤ 500 cm²
Baakadaha	Darajada Z/D Darajada	Cassette Multi-wafer ah ama Konteenarka Waferka Keliya	Cassette Multi-wafer ah ama Konteenarka Waferka Keliya

Adeegyada XKH: Awoodaha Wax-soo-saarka iyo Wax-soo-saarka Isku-dhafka ah

Shirkadda XKH waxay leedahay awood is dhexgalka tooska ah laga bilaabo alaabta ceeriin ilaa maraqyada la dhammeeyay, oo daboolaya dhammaan silsiladda koritaanka substrate-ka SiC, jeexid, dhalaalid, iyo habayn gaar ah. Faa'iidooyinka adeegga muhiimka ah waxaa ka mid ah:

Kala Duwanaanshaha Agabka:Waxaan bixin karnaa noocyo kala duwan oo wafer ah sida nooca 4H-N, nooca 4H-HPSI, nooca 4H/6H-P, iyo nooca 3C-N. U adkaysiga, dhumucda, iyo hanuuninta waxaa lagu hagaajin karaa iyadoo loo eegayo shuruudaha.
;Habaynta Cabbirka dabacsan:Waxaan taageernaa farsamaynta waferka laga bilaabo 2-inch ilaa 12-inch dhexroor, waxaanan sidoo kale farsameyn karnaa qaabab gaar ah sida qaybo labajibbaaran (tusaale, 5x5mm, 10x10mm) iyo prisms aan caadi ahayn.
Xakamaynta saxda ah ee darajada indhaha:Wafer wadarta dhumucda kala duwanaanshaha (TTV) waxaa lagu ilaalin karaa <1μm, iyo qallafsanaanta dusha sare ee Ra <0.3 nm, oo buuxinaysa shuruudaha fidsanaanta heerka nano ee aaladaha waveguide.
Jawaabta Suuqa Degdegga ah:Qaabka ganacsi ee isku dhafan wuxuu hubinayaa kala-guurka hufan ee R&D ilaa wax soo saarka ballaaran, isagoo taageeraya wax walba laga bilaabo xaqiijinta dufcad yar ilaa shixnadaha mugga weyn (waqtiga hogaaminta sida caadiga ah 15-40 maalmood).

FAQ ee HPSI SiC Wafer

Q1: Waa maxay sababta HPSI SiC loogu tixgalinayo wax ku habboon muraayadaha waveguide AR?
A1: Tilmaanteeda sare ee dib u soo celinta (2.6-2.7) waxay sahlaysa dhuuban, qaab-dhismeedyada hagaha mawjadaha waxtarka leh ee taageera aragti weyn (tusaale, 70°-80°) iyadoo meesha ka saaraysa "saamaynta qaanso-roobaadka".
Q2: Sidee buu HPSI SiC u wanaajiyaa maaraynta kulaylka ee muraayadaha AI/AR?
A2: Iyada oo kuleyliyaha kulaylka ilaa 490 W / m · K (ku dhow naxaas), waxay si hufan u daadisaa kuleylka qaybaha sida Micro-LEDs, hubinta waxqabadka xasilloon iyo cimri dhererka qalabka.
Q3: Waa maxay faa'iidooyinka adkeysiga ay HPSI SiC ku bixiso muraayadaha la xiran karo?
A3: Adaggeeda gaarka ah (Mohs 9.5) waxay bixisaa iska caabin xoqan oo heer sare ah, taasoo ka dhigaysa mid aad u adkeysi leh isticmaalka maalinlaha ah ee muraayadaha AR ee heerka macaamiisha.