Substrate
-
Substrate-ka Silicon-On-Insulator-ka ah ee SOI wuxuu saddex lakab u yahay Microelectronics-ka iyo Soo noqnoqoshada Raadiyaha.
-
Dahaarka wafer-ka SOI ee silicon-ka ah ee 8-inji iyo 6-inji SOI (Silicon-On-Insulator)
-
6inch SiC Wafer Epitaxiy Nooca N/P waa la aqbalayaa oo la habeeyey
-
Wafer dhoobada ah oo Alumina ah oo 4 inji ah, nadiif ah 99% polycrystalline ah oo u adkaysta xirashada 1mm dhumucdiisuna waa 1mm
-
200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer
-
Wafer Silicon Dioxide ah oo SiO2 ah oo qaro weyn leh, la safeeyey, oo heer sare ah oo tijaabo ah
-
4H-N Dia205mm SiC iniin laga keenay Shiinaha P iyo D heerka Monocrystaline
-
Wafer FZ CZ Si ah oo kayd ah oo 12 inji ah oo ah wafer silicon ah oo Prime ama Test ah
-
Dia150mm 4H-N 6inch substrate SiC Soo saarista iyo heerka been abuurka ah
-
3 inji Dia76.2mm sapphire wafer 0.5mm dhumucdiisuna tahay C-plane SSP
-
8 inji oo ah wafer silikoon ah oo P/N ah (100) 1-100Ω substrate-ka dib-u-soo-celinta been abuurka ah
-
Wafer 4 inji ah oo SiC Epi ah oo loogu talagalay MOS ama SBD