Xarig Dhoobo ah oo Silicon Carbide ah oo loogu talagalay SiC safayr Si GAAs Wafer

Wafer Silicon Carbide ah oo loogu talagalay SiC safayr Si GAAs ah Sawirka Featured

Sharaxaad Gaaban:

Qalabka Ceramic-ka ee Silicon Carbide Chuck waa goob waxqabad sare leh oo loogu talagalay kormeerka semiconductor-ka, sameynta wafer-ka, iyo codsiyada isku xidhka. Waxaa lagu dhisay agabyo dhoobo ah oo horumarsan - oo ay ku jiraan sintered SiC (SSiC), SiC-ga falgalka ku xidhan (RSiC), silicon nitride, iyo aluminium nitride - waxay bixisaa adkaansho sare, ballaarinta kulaylka oo hooseeya, iska caabin aad u fiican oo xirashada, iyo cimri dheer oo adeeg ah.

Noo soo dir emayl

Astaamaha

Jaantus Faahfaahsan

Dulmar guud oo ku saabsan Silicon Carbide (SiC) Ceramic Chuck

TheSilicon Carbide Chuck dhoobadawaa goob waxqabad sare leh oo loogu talagalay kormeerka semiconductor-ka, sameynta wafer-ka, iyo codsiyada isku xidhka. Waxaa lagu dhisay agabyo dhoobo oo horumarsan - oo ay ku jiraanSiC-ga sintered (SSiC), SiC-ga ku xidhan falgalka (RSiC), nitride silikoon ah, iyoNitride aluminium ah- waxay bixisaaadkaansho sare, ballaarinta kulaylka oo hooseeya, iska caabin xirasho oo aad u fiican, iyo cimri dheer oo adeeg ah.

Iyada oo la adeegsanayo injineernimo sax ah iyo nadiifin casri ah, chuck-ku wuxuu bixiyaafidsanaan yar oo micron ah, dusha sare ee tayada muraayadda, iyo xasilloonida cabbirka muddada dheer, taasoo ka dhigaysa xalka ugu habboon ee hababka semiconductor-ka muhiimka ah.

Faa'iidooyinka Muhiimka ah

Saxnaan Sare
Fidsanaan la xakameeyey gudaha0.3–0.5 μm, hubinta xasilloonida wafer-ka iyo saxnaanta habka joogtada ah.
Nadiifinta Muraayadda
GuuloRa 0.02 μmqallafsanaanta dusha sare, yaraynta xoqidda iyo wasakhowga wafer-ka—ku habboon deegaannada aadka u nadiifsan.
Aad u Fudud
Ka xoog badan laakiin ka fudud substrates-ka quartz ama birta, hagaajinta xakamaynta dhaqdhaqaaqa, jawaab celinta, iyo saxnaanta booska.
Qalafsanaan Sare
Modulus-ka Gaarka ah ee Young wuxuu hubiyaa xasilloonida cabbirka marka culeysyo culus iyo hawlgal xawaare sare leh.
Ballaarinta Kulaylka Hoose
CTE waxay si dhow ula jaanqaadaysaa wafers-ka silicon, taasoo yaraynaysa cadaadiska kulaylka waxayna kor u qaadaysaa isku halaynta habka.
Iska caabinta Xidhmada oo Aad u Fiican
Adkaanta xad dhaafka ah waxay ilaalisaa simanaanta iyo saxnaanta xitaa marka la isticmaalo muddada dheer, oo leh soo noqnoqosho sare.

Habka Wax Soo Saarka

Diyaarinta Walxaha Cayriin
Budada SiC oo saafi ah oo leh cabbir walax oo la xakameeyey iyo wasakh aad u hooseysa.
Samaynta & Sintering
Farsamooyinka sidasintering aan cadaadis lahayn (SSiC) or isku xidhka falgalka (RSiC)soo saar substrate-yada dhoobada ah ee cufan oo isku mid ah.
Makiinadaha Sax ah
Shiididda CNC, jarista laysarka, iyo mashiinka saxnaanta aadka u sarreeya waxay gaaraan dulqaad ±0.01 mm iyo isbarbardhig ≤3 μm.
Daaweynta Dusha Sare
Shiidi iyo dhalaalin marxalado badan leh ilaa Ra 0.02 μm; dahaadh ikhtiyaari ah ayaa loo heli karaa iska caabbinta daxalka ama sifooyinka is-jiidjiidka ee la habeeyey.
Kormeerka iyo Xakamaynta Tayada
Mitirayaasha isku-dhafka ah iyo tijaabiyayaasha qallafsanaanta ayaa xaqiijiya u hoggaansanaanta qeexitaannada heerka semiconductor-ka.

Tilmaamaha Farsamada

Halbeegga	Qiimaha	Cutubka
Fidsanaan	≤0.5	μm
Cabbirrada Wafer-ka	6'', 8'', 12'' (gaar ahaan waa la heli karaa)	—
Nooca dusha sare	Nooca biinka / Nooca faraantiga	—
Dhererka biinka	0.05–0.2	mm
Dhexroorka biinka ugu yar	ϕ0.2	mm
Kala fogaanshaha biinka ugu yar	3	mm
Ballaca ugu yar ee giraanta shaabadda	0.7	mm
Qalafsanaanta dusha sare	Ra 0.02	μm
Dulqaad dhumuc leh	±0.01	mm
Dulqaadka dhexroorka	±0.01	mm
Dulqaadka isbarbardhigga	≤3	μm

Codsiyada ugu Muhiimsan

Qalabka kormeerka wafer-ka semiconductor-ka
Nidaamyada farsamaynta iyo wareejinta Wafer-ka
Qalabka xidhitaanka iyo baakadaha Wafer-ka
Wax soo saarka qalabka elektaroonigga ah ee horumarsan
Qalabka saxda ah ee u baahan dusha sare ee aadka u siman, aad u nadiif ah

Q&A – Chuck Dhoobada Silicon Carbide

S1: Sidee baa loo barbar dhigaa jajabyada dhoobada ah ee SiC iyo jajabyada quartz ama birta?
A1: Qalabka SiC waa kuwo fudud, adag, waxayna leeyihiin CTE oo u dhow wafers silicon ah, taasoo yaraynaysa isbeddelka kulaylka. Waxay sidoo kale bixiyaan iska caabin sare oo xirasho iyo cimri dheer.

S2: Waa maxay fidsanaanta la gaari karo?
A2: Gudaha lagu xakameeyey0.3–0.5 μm, iyadoo la daboolayo baahiyaha adag ee wax soo saarka semiconductor-ka.

S3: Dusha sare ma xoqi doontaa buskudka?
A3: Maya—muraayad-lagu safeeyeyRa 0.02 μm, hubinta maaraynta xoq la'aanta iyo yaraynta soo saarista walxaha.

S4: Cabbirrada kee baa la taageeraa?
A4: Cabbirrada caadiga ah6'', 8'', iyo 12'', iyadoo la heli karo habayn.

S5: Sidee u tahay iska caabbinta kulaylka?
A5: Dhoobada SiC waxay bixiyaan waxqabad heerkul sare oo aad u fiican iyadoo la beddelayo qaab-dhismeedka ugu yar marka loo eego wareegga kuleylka.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.