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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch image Featured
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch

Sharaxaad Gaaban:

Waxaan bixinaa xulashooyin kala duwan oo ah buskud SiC (Silicon Carbide) tayo sare leh, iyadoo si gaar ah diiradda loo saarayo buskudyada nooca N-type 4H-N iyo 6H-N, kuwaas oo ku habboon codsiyada optoelectronics-ka horumarsan, aaladaha korontada, iyo jawiga heerkulka sare leh. Buskudyadan nooca N-type waxaa loo yaqaanaa kuleylkooda gaarka ah, xasilloonida korantada ee aadka u fiican, iyo adkeysi cajiib ah, taasoo ka dhigaysa kuwo ku habboon codsiyada waxqabadka sare leh sida qalabka elektarooniga korontada, nidaamyada wadista baabuurta korontada, buskudyada tamarta la cusboonaysiin karo, iyo sahayda korontada warshadaha. Marka lagu daro waxyaabaha aan bixinno nooca N-type, waxaan sidoo kale bixinnaa buskudyada nooca P-type 4H/6H-P iyo 3C SiC ee baahiyaha gaarka ah, oo ay ku jiraan aaladaha soo noqnoqda sare iyo RF, iyo sidoo kale codsiyada photonic. Buskudyadayadu waxay ku diyaar yihiin cabbirro u dhexeeya 2 inji ilaa 8 inji, waxaanan bixinnaa xalal loo habeeyay si loo daboolo shuruudaha gaarka ah ee qaybaha warshadaha kala duwan. Wixii faahfaahin dheeraad ah ama weydiimo ah, fadlan xor u noqo inaad nala soo xiriirto.


Astaamaha

Guryaha

4H-N iyo 6H-N (Wafers-ka SiC ee nooca N-nooca ah)

Codsiga:Waxaa ugu horreyn loo isticmaalaa qalabka elektaroonigga korontada, optoelectronics, iyo codsiyada heerkulka sare.

Kala duwanaanshaha dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:350 μm ± 25 μm, oo leh dhumuc ikhtiyaari ah oo ah 500 μm ± 25 μm.

Iska caabin:Nooca N-ga 4H/6H-P: ≤ 0.1 Ω·cm (H-fasalka), ≤ 0.3 Ω·cm (H-fasalka); Nooca N-ga 3C-N: ≤ 0.8 mΩ·cm (H-fasalka), ≤ 1 mΩ·cm (H-fasalka).

Qalafsanaanta:Ra ≤ 0.2 nm (CMP ama MP).

Cufnaanta Tuubooyinka Yaryar (MPD):< 1 e/cm².

TV-ga: ≤ 10 μm dhammaan dhexroorka.

Duub: ≤ 30 μm (≤ 45 μm ee loogu talagalay buskudka 8-inji ah).

Ka-saarista Cidhifka:3 mm ilaa 6 mm iyadoo ku xiran nooca buskudka.

Baakadaha:Cajalad badan oo wafer ah ama weel wafer ah oo hal mar la isticmaalo.

Oohter cabbirka la heli karo waa 3 inji 4 inji 6 inji 8 inji

Waferada SiC ee Nadiifka Sare leh ee Nusuufka ah (HPSI)

Codsiga:Waxaa loo isticmaalaa aaladaha u baahan iska caabin sare iyo waxqabad deggan, sida aaladaha RF, codsiyada photonic, iyo dareemayaasha.

Kala duwanaanshaha dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:Dhumucda caadiga ah ee 350 μm ± 25 μm oo leh ikhtiyaarro loogu talagalay buskudyo qaro weyn ilaa 500 μm.

Qalafsanaanta:Ra ≤ 0.2 nm.

Cufnaanta Tuubooyinka Yaryar (MPD): ≤ 1 e/cm².

Iska caabin:Iska caabin sare, oo badanaa loo isticmaalo codsiyada semi-insulating.

Duub: ≤ 30 μm (cabbirrada yaryar), ≤ 45 μm dhexroorrada waaweyn.

TV-ga: ≤ 10 μm.

Oohter cabbirka la heli karo waa 3 inji 4 inji 6 inji 8 inji

4H-P、6H-P&3C Wafer SiC ah(Wafers-ka nooca P-SiC)

Codsiga:Ugu horreyn loogu talagalay aaladaha korontada iyo kuwa soo noqnoqda.

Kala duwanaanshaha dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:350 μm ± 25 μm ama ikhtiyaarro gaar ah.

Iska caabin:Nooca P-ga 4H/6H-P: ≤ 0.1 Ω·cm (H-fasalka), ≤ 0.3 Ω·cm (H-fasalka).

Qalafsanaanta:Ra ≤ 0.2 nm (CMP ama MP).

Cufnaanta Tuubooyinka Yaryar (MPD):< 1 e/cm².

TV-ga: ≤ 10 μm.

Ka-saarista Cidhifka:3 mm ilaa 6 mm.

Duub: ≤ 30 μm cabbirrada yaryar, ≤ 45 μm cabbirrada waaweyn.

Oohter cabbirkiisu waa 3 inji 4 inji 6 inji5×5 10×10

Shaxda Qaybaha Xogta

Hantida

2 inji

3 inji

4 inji

6 inji

8 inji

Nooca

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Dhexroorka

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Dhumucda

330 ± 25 um

350 ± 25 um

350 ± 25 um

350 ± 25 um

350 ± 25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

ama loo habeeyey

ama loo habeeyey

ama loo habeeyey

ama loo habeeyey

ama loo habeeyey

Qalafsanaan

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Duub

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TV-ga

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Xoq/Qod

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Qaab

Wareeg, Fidsan 16mm; Dhererka 22mm; Dhererka 30/32.5mm; Dhererka 47.5mm; Foolka; Foolka;

Bevel

45°, Badhtamaha Gaarka ah; Qaab C

 Fasal

Heerka wax soo saarka ee MOS&SBD; Darajada cilmi-baarista; Darajada been abuurka ah, Darajada Wafer-ka Iniinta

Faallooyin

Dhexroorka, Dhumucda, Jihaynta, iyo qeexitaannada kor ku xusan waxaa loo habeyn karaa codsigaaga

 

Codsiyada

·Elektarooniga Korontada

Wafer-yada nooca N SiC ayaa muhiim u ah aaladaha elektaroonigga ah ee korontada ku shaqeeya sababtoo ah awooddooda ay u leeyihiin inay la qabsadaan danab sare iyo koronto sare. Waxaa si caadi ah loogu isticmaalaa qalabka wax lagu beddelo korontada, qalabka wax lagu beddelo, iyo darawallada matoorka ee warshadaha sida tamarta la cusboonaysiin karo, gawaarida korontada ku shaqeeya, iyo otomaatiga warshadaha.

· Qalabka Elektarooniga ah
Alaabada nooca N SiC, gaar ahaan codsiyada optoelectronic, waxaa loo isticmaalaa aaladaha sida diode-yada iftiinka soo saara (LEDs) iyo diode-yada laysarka. Hab-dhaqankooda kulaylka sare iyo farqiga ballaaran ayaa ka dhigaya kuwo ku habboon aaladaha optoelectronic-ka ee waxqabadka sare leh.

·Codsiyada Heerkulka Sare
Wafers-ka 4H-N 6H-N SiC ayaa si fiican ugu habboon deegaannada heerkulka sare, sida dareemayaasha iyo aaladaha korontada ee loo isticmaalo hawada sare, baabuurta, iyo codsiyada warshadaha halkaas oo kala-baxa kulaylka iyo xasilloonida heerkulka sare ay muhiim yihiin.

·Qalabka RF
Wafers-ka 4H-N 6H-N SiC waxaa loo isticmaalaa aaladaha soo noqnoqda raadiyaha (RF) ee ka shaqeeya heerarka soo noqnoqda sare. Waxaa lagu dabaqaa nidaamyada isgaarsiinta, tignoolajiyada radar, iyo isgaarsiinta dayax-gacmeedka, halkaas oo loo baahan yahay hufnaan tamar sare iyo waxqabad.

·Codsiyada Sawirka
Footonikyada, wafer-yada SiC waxaa loo isticmaalaa aaladaha sida sawir-qaadayaasha iyo modulators-ka. Sifooyinka gaarka ah ee walaxdani waxay u oggolaanayaan inay wax ku ool u noqoto soo saarista iftiinka, isbeddelka, iyo ogaanshaha nidaamyada isgaarsiinta indhaha iyo aaladaha sawir-qaadista.

·Dareemayaasha
Wafer-ka SiC waxaa loo isticmaalaa codsiyo kala duwan oo dareemayaal ah, gaar ahaan deegaannada adag ee agabka kale ku fashilmi karo. Kuwaas waxaa ka mid ah heerkulka, cadaadiska, iyo dareemayaasha kiimikada, kuwaas oo lagama maarmaan u ah meelaha sida baabuurta, saliidda iyo gaaska, iyo la socodka deegaanka.

·Nidaamyada Wadista Gawaarida Korontada
Tiknoolajiyadda SiC waxay door muhiim ah ka ciyaartaa gawaarida korontada iyadoo hagaajinaysa hufnaanta iyo waxqabadka nidaamyada wadista. Iyada oo la adeegsanayo semiconductors-ka awoodda SiC, gawaarida korontada ku shaqeeya waxay gaari karaan cimri batari oo wanaagsan, waqtiyo dallacaad oo dhakhso badan, iyo hufnaan tamar oo weyn.

·Dareemayaasha Sare iyo Beddelayaasha Sawirka
Tiknoolajiyada dareemayaasha ee horumarsan, wafers-ka SiC waxaa loo isticmaalaa abuurista dareemayaal sax ah oo heer sare ah oo loogu talagalay codsiyada robotics-ka, aaladaha caafimaadka, iyo la socodka deegaanka. Beddelayaasha photonic-ga, sifooyinka SiC waxaa loo isticmaalaa si loo suurtogeliyo beddelka hufan ee tamarta korontada loogu beddelo calaamadaha indhaha, taas oo muhiim u ah isgaarsiinta iyo kaabayaasha internetka ee xawaaraha sare leh.

S&J

QWaa maxay 4H ee 4H SiC?
A："4H" ee 4H SiC waxaa loola jeedaa qaab-dhismeedka kiristaalka ee silikoon carbide, gaar ahaan qaab lix-geesood ah oo leh afar lakab (H). "H" wuxuu tilmaamayaa nooca laba-geesoodka ah ee laba-geesoodka ah, isagoo ka soocaya noocyada kale ee SiC sida 6H ama 3C.

QWaa maxay conductivity kulaylka ee 4H-SiC?
A: Daawaynta kulaylka ee 4H-SiC (Silicon Carbide) waa qiyaastii 490-500 W/m·K heerkulka qolka. Daawaynta kulaylka sare waxay ka dhigaysaa mid ku habboon isticmaalka elektaroonigga korontada iyo jawiga heerkulka sare, halkaas oo daawaynta kulaylka hufan ay muhiim tahay.

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