Substrate-ka Silikoon-ka-daboolaya (SiC) Nadiifin Sare oo loogu talagalay Muraayadaha Ar

Substrate-ka Silikoon Carbide (SiC) ee Nuska-daboolaya Nadiif Sare oo loogu talagalay Muraayadaha Ar Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Substrate-ka carbide-ka semi-insulating silicon (SiC) ee saafiga ah waa agab gaar ah oo laga sameeyay carbide-ka silicon, oo si weyn loogu isticmaalo soo saarista qalabka elektarooniga korontada, aaladaha soo noqnoqda raadiyaha (RF), iyo qaybaha semiconductor-ka ee soo noqnoqda, heerkulka sare. Silicon carbide, oo ah walax semiconductor-ka oo ah bandgap ballaaran, waxay bixisaa sifooyin koronto, kuleyl, iyo farsamo oo aad u fiican, taasoo ka dhigaysa mid aad ugu habboon codsiyada jawiga danab-sare, soo noqnoqoshada sare, iyo heerkulka sare.

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Dulmar Guud oo ku saabsan Waferada SiC ee Semi-Insulating-ka ah

Waferada SiC ee Nadiifka ah ee Nusufaysan waxaa loogu talagalay elektaroonigga korontada ee horumarsan, qaybaha RF/mikrowev-ka, iyo codsiyada optoelectronic. Waferadan waxaa laga sameeyay kiristaalo keli ah oo tayo sare leh oo 4H- ama 6H-SiC ah, iyadoo la adeegsanayo hab korriin Fiisikis ah oo lagu safeeyey Gaadiidka Uumiga Jirka (PVT), oo ay ku xigto buuxinta magdhowga heerka qoto dheer. Natiijadu waa wafer leh sifooyinka soo socda ee cajiibka ah:

Iska caabin aad u Sareysa: ≥1×10¹² Ω·cm, si wax ku ool ah u yareynta qulqulka daadashada ee aaladaha beddelka danabka sare leh.
Baaxadda Ballaca Ballaaran (~3.2 eV): Waxay hubisaa waxqabad heer sare ah oo ka jira jawi heerkul sare leh, goob sare leh, iyo jawi shucaac badan leh.
Qaboojinta Kulaylka Gaarka ah: >4.9 W/cm·K, taasoo bixinaysa kala-baxa kulaylka oo hufan marka la adeegsanayo awood sare.
Xoog Farsamo oo Sare: Iyada oo leh adkaanta Mohs oo ah 9.0 (labaad kaliya ka dambeysa dheemanka), ballaarinta kulaylka oo hooseysa, iyo xasilloonida kiimikada oo xooggan.
Dusha sare ee Atomiga ah oo siman: Ra < 0.4 nm iyo cufnaanta cilladaha < 1/cm², oo ku habboon sameynta epitaxy MOCVD/HVPE iyo micro-nano.

Cabbirrada la heli karoCabbirrada caadiga ah waxaa ka mid ah 50, 75, 100, 150, iyo 200 mm (2"–8"), iyadoo dhexroorka gaarka ah la heli karo ilaa 250 mm.
Kala duwanaanshaha dhumucda: 200–1,000 μm, oo leh dulqaad dhan ±5 μm.

Habka Wax Soo Saarka Waferada SiC ee Semi-Insulating

Diyaarinta Budada SiC ee Nadiifka Sare leh

Qalabka BilaabiddaBudada SiC ee heerka 6N, oo lagu nadiifiyay isticmaalka sublimation-ka faakuumka ee marxalado badan leh iyo daaweynta kulaylka, iyadoo la hubinayo wasakhowga birta oo hooseeya (Fe, Cr, Ni < 10 ppb) iyo ku darista polycrystalline-ka oo yar.

Kobaca Hal-Kiristaal ee PVT ee wax laga beddelay

Deegaanka: Ku dhawaad vacuum (10⁻³–10⁻² Torr).
Heerkulka: Graphite crucible oo lagu kululeeyay ~2,500 °C iyadoo heerkulbeeg la xakameeyey oo ΔT ≈ 10–20 °C/cm ah.
Socodka Gaaska & Naqshadeynta GaaskaKala-soocayaasha loo habeeyey ee la shiilay iyo kuwa daloola ayaa hubiya qaybinta uumiga oo isku mid ah waxayna xakameeyaan nucleation-ka aan loo baahnayn.
Quudinta Firfircoon & Wareegga: Dib-u-buuxinta joogtada ah ee budada SiC iyo wareegga usha crystal-rod waxay keentaa cufnaan yar oo kala-goys ah (<3,000 cm⁻²) iyo jiho joogto ah oo 4H/6H ah.

Buuxinta Magdhawga Heerka Qoto-dheer

Haydarojiin Anal: Waxaa lagu sameeyaa jawiga H₂ heerkul u dhexeeya 600–1,400 °C si loo kiciyo dabinada heerka qoto dheer iyo xasilinta sideyaasha gudaha.
Lama ogola inaad isticmaasho Daawaynta Wadajirka ah (Ikhtiyaar): Ku darista Al (aqbale) iyo N (deeq-bixiye) inta lagu jiro koritaanka ama CVD-ka kadib kobaca si loo sameeyo lammaane deggan oo deeq-bixiye-aqbale ah, taasoo horseedaysa iska caabinta ugu sarreysa.

Gooynta Saxda ah iyo Wareegga Marxaladaha Badan

Goynta Siligga Dheemanka ah: Wafers la jarjaray oo dhumucdiisu tahay 200–1,000 μm, oo leh waxyeello yar iyo dulqaad ±5 μm.
Habka Wareegga: Qallaf-dhagaxyo dheeman ah oo isku xigxiga ayaa ka saaraya dhaawaca miinshaarta, iyagoo diyaarinaya wafer-ka si loo nadiifiyo.

Nadiifinta Farsamada Kiimikada (CMP)

Warbaahinta Nadiifinta: Nano-oxide (SiO₂ ama CeO₂) oo ku jira xal alkaline khafiif ah.
Xakamaynta HabkaNadiifinta cadaadiska hooseeya waxay yareysaa qallafsanaanta, iyadoo la gaarayo qallafsanaanta RMS ee 0.2–0.4 nm iyo baabi'inta xoqidda yaryar.

Nadiifinta iyo Baakaynta Kama Dambeysta ah

Nadiifinta Ultrasonic: Hawsha nadiifinta ee dhowr tallaabo ah (dareeraha dabiiciga ah, daawaynta aashitada/saldhigga, iyo biyo raacinta la dhalaaliyay) ee jawi nadiif ah oo Fasalka 100 ah.
Shaabadeynta iyo Baakaynta: Qallajinta Wafer-ka oo lagu nadiifiyo nitrogen, lagu shaabadeeyay bacaha ilaalinta ee ay ka buuxaan nitrogen-ka oo lagu duubay sanduuqyo dibadda ah oo ka hortagga gariirka, oo qaboojiya gariirka.

Tilmaamaha Wafer-yada SiC ee Semi-insulating-ka ah

Waxqabadka Alaabta	Darajada P	Darajada D
I. Cabbirrada Crystal	I. Cabbirrada Crystal	I. Cabbirrada Crystal
Nooca Crystal Polytype	4H	4H
Tusmada Refractive a	>2.6 @589nm	>2.6 @589nm
Heerka nuugista a	≤0.5% @450-650nm	≤1.5% @450-650nm
Gudbinta MP a (Aan dahaarka lahayn)	≥66.5%	≥66.2%
Haze a	≤0.3%	≤1.5%
Ka mid noqoshada nooca polytype a	Lama oggola	Aagga wadarta ah ≤20%
Cufnaanta dhuumaha yaryar	≤0.5 / cm²	≤2 / cm²
Booska Lix-geesoodka ah a	Lama oggola	Lama Helin
Ka mid noqoshada wajiyada leh a	Lama oggola	Lama Helin
Ku darista Xildhibaan a	Lama oggola	Lama Helin
II. Cabbiraadaha Farsamada	II. Cabbiraadaha Farsamada	II. Cabbiraadaha Farsamada
Dhexroorka	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Jihaynta Dusha Sare	{0001} ±0.3°	{0001} ±0.3°
Dhererka Fidsan ee Aasaasiga ah	Qaylo-dhaan	Qaylo-dhaan
Dhererka Fidsan ee Labaad	Guri labaad ma jiro	Guri labaad ma jiro
Jihaynta Usha	<1-100> ±2°	<1-100> ±2°
Xagasha Kala-goysyada	90° +5° / -1°	90° +5° / -1°
Qoto dheer oo qoto dheer	1 mm laga bilaabo geeska +0.25 mm / -0.0 mm	1 mm laga bilaabo geeska +0.25 mm / -0.0 mm
Daaweynta Dusha Sare	Wajiga C, Si-wajiga: Nadiifinta Kiimikada-Makaanka (CMP)	Wajiga C, Si-wajiga: Nadiifinta Kiimikada-Makaanka (CMP)
Wafer Edge	Chamfered (Goobo leh)	Chamfered (Goobo leh)
Qalafsanaanta Dusha sare (AFM) (5μm x 5μm)	Si-wejiga, C-wejiga: Ra ≤ 0.2 nm	Si-wejiga, C-wejiga: Ra ≤ 0.2 nm
Dhumucda a (Tropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
LTV (Tropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Kala duwanaanshaha Dhumucda Guud (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Qaanso (Qiimaha Dhabta ah) a (Tropel)	≤ 5 μm	≤ 15 μm
Warp a (Tropel)	≤ 15 μm	≤ 30 μm
III. Cabbirrada Dusha sare	III. Cabbirrada Dusha sare	III. Cabbirrada Dusha sare
Jab/Qaylo-dheer	Lama oggola	≤ 2 xabbo, dherer iyo ballac kasta ≤ 1.0 mm
Xoq a (Si-face, CS8520)	Wadarta dhererka ≤ 1 x Dhexroor	Wadarta dhererka ≤ 3 x Dhexroor
Walxaha a (Si-face, CS8520)	≤ 500 xabbo	Lama Helin
Dildilaac	Lama oggola	Lama oggola
Wasakhowga a	Lama oggola	Lama oggola

Codsiyada Muhiimka ah ee Wafers-ka SiC ee Semi-insulating-ka ah

Elektaroonikada Awoodda Sare leh: MOSFET-yada ku salaysan SiC, diode-yada Schottky, iyo modules-yada korontada ee baabuurta korontada ku shaqeeya (EVs) waxay ka faa'iidaystaan awoodaha iska caabinta yar iyo kuwa danab-sare ee SiC.
RF & Microwave: Waxqabadka sare ee soo noqnoqda iyo iska caabbinta shucaaca ee SiC ayaa ku habboon cod-weyneeyayaasha saldhigga 5G, modules-yada radar, iyo isgaarsiinta dayax-gacmeedka.
Optoelectronics: UV-LEDs, diode-yada buluugga ah ee laysarka, iyo sawir-qaadayaasha waxay isticmaalaan substrate-yada SiC ee siman ee atomiga si ay u koraan epitaxial isku mid ah.
Dareenka Deegaanka ee Xad-dhaafka ah: Xasilloonida SiC ee heerkulka sare (>600 °C) waxay ka dhigaysaa mid ku habboon dareemayaasha jawiga adag, oo ay ku jiraan marawaxadaha gaaska iyo qalabka wax lagu ogaado nukliyeerka.
Hawada Sare iyo Difaaca: SiC waxay bixisaa waara elektaroonigga korontada ku shaqeeya ee dayax-gacmeedyada, nidaamyada gantaalada, iyo elektaroonigga duulista.
Cilmi-baaris SareXalalka gaarka ah ee loogu talagalay xisaabinta quantum, micro-optics, iyo codsiyada kale ee cilmi-baarista ee gaarka ah.

Su'aalaha Badiya La Weydiiyo

Maxaa SiC-ga semi-insulating uga sarreeya SiC-ga gudbiya?
SiC-ga nus-dabool ah wuxuu bixiyaa iska caabin aad u sareysa, taasoo yaraynaysa qulqulka daadashada ee aaladaha danab sare iyo kuwa soo noqnoqda sare leh. SiC-ga gudbiyaha ah ayaa ku habboon codsiyada halkaas oo loo baahan yahay koronto-qaadis.
Ma loo isticmaali karaa buskudyadan koritaanka epitaxial-ka?
Haa, buskudyadan waa kuwo diyaar u ah oo loo habeeyay MOCVD, HVPE, ama MBE, iyadoo la adeegsanayo daawaynta dusha sare iyo xakamaynta cilladaha si loo hubiyo tayada lakabka epitaxial ee sare.
Sidee baad u hubisaa nadaafadda wafer-ka?
Habka nadiifinta qolka Class-100, nadiifinta ultrasonic-ka ee dhowr tallaabo ah, iyo baakadaha lagu xiray nitrogen waxay dammaanad qaadayaan in buskudku ay ka xor yihiin wasakhda, haraaga, iyo xoqidda yaryar.
Waa maxay waqtiga hogaanka ee dalabaadka?
Shaybaaradu waxay caadi ahaan soo diraan 7-10 maalmood oo shaqo gudahood, halka dalabaadka wax soo saarka badanaa la keeno 4-6 toddobaad gudahood, iyadoo ku xiran cabbirka wafer-ka gaarka ah iyo sifooyinka gaarka ah.
Ma bixin kartaa qaabab gaar ah?
Haa, waxaan abuuri karnaa substrates gaar ah oo qaabab kala duwan leh sida daaqadaha planar, V-grooves, muraayadaha wareegsan, iyo waxyaabo kaloo badan.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.