Qalabka Kobaca Ingot Sapphire Habka Czochralski CZ ee Soo Saarista Waferada Sapphire 2-12 inji ah

Qalabka Kobaca Ingot ee Sapphire Habka Czochralski CZ ee Soo Saarista Waferada Sapphire ee 2-12 inji ah Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Qalabka Kobaca Sapphire Ingot (Habka Czochralski) waa nidaam casri ah oo loogu talagalay koritaanka hal-kiristaal sapphire saafi ah oo hooseeya, cillad yar. Habka Czochralski (CZ) wuxuu suurtogal ka dhigayaa xakamaynta saxda ah ee xawaaraha jiidista kiristaalka abuurka (0.5-5 mm/saacaddii), heerka wareegga (5-30 rpm), iyo heerarka heerkulka ee ku jira isku-darka iridium, isagoo soo saaraya kiristaal axisymmetric ah oo gaaraya 12 inji (300 mm) dhexroor. Qalabkani wuxuu taageeraa xakamaynta jihada kiristaalka C/A-plane, taasoo suurtogalinaysa koritaanka nooca indhaha, nooca elektaroonigga ah, iyo safayr la dahaadhay (tusaale ahaan, safayr Cr³⁺, safayr Ti³⁺).

XKH waxay bixisaa xalal dhammaad-ilaa-dhammaad ah, oo ay ku jiraan habaynta qalabka (soo saarista wafer 2-12-inji ah), hagaajinta habka (cufnaanta cilladaha <100/cm²), iyo tababar farsamo, iyadoo la soo saarayo 5,000+ wafers bishiiba oo loogu talagalay codsiyada sida substrates-ka LED, GaN epitaxy, iyo baakadaha semiconductor-ka.

Noo soo dir emayl

Astaamaha

Mabda'a Shaqada

Habka CZ wuxuu ku shaqeeyaa tallaabooyinka soo socda:
1. Dhalaalidda Agabka Ceeriin: Nadiifnimo sare leh Al₂O₃ (daahirnimo >99.999%) waxaa lagu dhalaaliyaa weel iridium ah heerkul ah 2050–2100°C.
2. Crystal-ka Iniinaha Hordhac: Crystal-ka iniinyaha ayaa hoos loogu dhigaa dhalaalka, ka dibna si degdeg ah ayaa loo jiidayaa si loo sameeyo qoorta (dhexroorka <1 mm) si loo baabi'iyo kala-goysyada.
3. Samaynta Garabka iyo Kobaca Badan: Xawaaraha jiidista waxaa loo dhimay 0.2–1 mm/saacaddii, iyadoo si tartiib tartiib ah loogu ballaarinayo dhexroorka kiristaalka ilaa cabbirka bartilmaameedka (tusaale ahaan, 4–12 inji).
4. Qaboojinta iyo Qaboojinta: Kilaasku wuxuu qaboojiyaa 0.1–0.5°C/daqiiqad si loo yareeyo dillaaca kulaylka ee uu keeno cadaadiska.
5. Noocyada Crystal ee La jaanqaadaya:
Heerka Elektarooniga ah: Substrates-ka Semiconductor-ka (TTV <5 μm)
Heerka Indhaha: Daaqadaha laysarka UV (gudbinta >90% @ 200 nm)
Noocyada la duray: Ruby (Xoogga Cr³⁺ 0.01–0.5 wt.%), tuubo buluug ah oo safayr ah

Qaybaha Nidaamka Aasaasiga ah

1. Nidaamka Dhalmada
Iridium Crucible: Waxay u adkaysataa 2300°C, waxay u adkaysataa daxalka, waxayna la jaan qaadi kartaa dhalaalka waaweyn (100-400 kg).
Foornada Kuleylka Induction: Xakamaynta heerkulka madaxbannaan ee aagag badan (±0.5°C), heerarka kulaylka ee la hagaajiyay.

2. Nidaamka Jiidista iyo Wareegga
Matoorka Servo-ga Saxnaanta Sare leh: Xalka jiidista 0.01 mm/saacaddii, isku-xidhka wareegga <0.01 mm.
Shaabadda Dareeraha Birlabta ah: Gudbinta aan taabashada lahayn si loo helo koritaan joogto ah (> 72 saacadood).

3. Nidaamka Xakamaynta Kulaylka
Xakamaynta Wareegga Xiran ee PID: Hagaajinta awoodda waqtiga-dhabta ah (50-200 kW) si loo xasiliyo goobta kulaylka.
Ilaalinta Gaaska aan firfircoonayn: Isku darka Ar/N₂ (99.999% daahirnimo) si looga hortago oksaydhaynta.

4. Otomaatig iyo La Socodsiin
La socodka Dhexroorka CCD: Jawaab celinta waqtiga-dhabta ah (saxnaanta ± 0.01 mm).
Cabbiraadda Infrared-ka: Waxay la socotaa qaab-dhismeedka is-dhexgalka adag-dareere.

Isbarbardhigga Habka CZ iyo KY

Halbeegga	Habka CZ	Habka KY
Cabbirka ugu badan ee Crystal	12 inji (300 mm)	400 mm (qolof qaab-liin ah)
Cufnaanta cilladaha	<100/cm²	<50/cm²
Heerka Kobaca	0.5–5 mm/saacaddii	0.1–2 mm/saacaddii
Isticmaalka Tamarta	50–80 kWh/kg	80–120 kWh/kg
Codsiyada	Substrates-ka LED-ka, GaN epitaxy	Daaqadaha indhaha, qaybo waaweyn
Qiimaha	Dhexdhexaad (maalgashiga qalabka oo sarreeya)	Sare (habraac adag)

Codsiyada Muhiimka ah

1. Warshadaha Semiconductor-ka
Substrates-ka GaN Epitaxial: Wafers 2–8-inji ah (TTV <10 μm) oo loogu talagalay Micro-LEDs iyo diode-yada laysarka.
Wafers-ka SOI: Qalafsanaanta dusha sare <0.2 nm ee jajabyada isku dhafan ee 3D.

2. Elektaroonikada
Daaqadaha Laser-ka UV: Waxay u adkeysan karaan cufnaanta awoodda 200 W/cm² ee muraayadaha indhaha ee lithography.
Qaybaha Infrared-ka: Isku-dhafka nuugista <10⁻³ cm⁻¹ ee sawir-qaadista kulaylka.

3. Elektarooniga Macaamiisha
Daboolka Kamarada Casriga ah: 9, 10× oo ah hagaajinta iska caabbinta xoqidda.
Bandhigyada Saacadaha Casriga ah: Dhumucdiisu waa 0.3–0.5 mm, gudbinta oo ka badan 92%.

4. Difaaca iyo Hawada Sare
Daaqadaha Fal-galka Nukliyeerka: Dulqaadka shucaaca ilaa 10¹⁶ n/cm².
Muraayadaha laysarka ee Awoodda Sare leh: Isbeddelka kulaylka <λ/20@1064 nm.

Adeegyada XKH

1. Habaynta Qalabka
Naqshadeynta Qolka La Cabbiri Karo: Qaabeynta Φ200–400 mm ee wax soo saarka wafer 2-12-inji ah.
Dabacsanaanta Doping-ka: Waxay taageertaa doping-ka dhulka dhifka ah (Er/Yb) iyo transition-metal (Ti/Cr) si loogu isticmaalo sifooyinka optoelectronic ee loogu talagalay.

2. Taageero Dhammaad-ilaa-Dhamaad
Hagaajinta Habka: Cuntooyinka horay loo xaqiijiyay (50+) ee LED, aaladaha RF, iyo qaybaha lagu adkeeyo shucaaca.
Shabakadda Adeegga Caalamiga ah: Baaritaanka fog fog 24/7 iyo dayactirka goobta oo leh damaanad 24 bilood ah.

3. Habaynta Hoos-u-socodka
Samaynta Wafer: Jarjaridda, shiididda, iyo nadiifinta waferada 2-12-inji ah (C/A-plane).
Alaabooyinka Qiimaha lagu daray:
Qaybaha Indhaha: Daaqadaha UV/IR (dhumucdoodu waa 0.5–50 mm).
Qalabka Heerka Dahabka: Ruby Cr³⁺ (shahaadada GIA), safayr Ti³⁺ xiddig.

4. Hoggaanka Farsamada
Shahaadooyinka: Wafers-ka u hoggaansan EMI.
Patent: Patent-yada asaasiga ah ee hal-abuurka habka CZ.

Gunaanad

Qalabka habka CZ wuxuu bixiyaa iswaafajin cabbir weyn, heerarka cilladaha aadka u hooseeya, iyo xasilloonida habka sare, taasoo ka dhigaysa halbeegga warshadaha ee codsiyada LED, semiconductor, iyo difaaca. XKH waxay bixisaa taageero dhammaystiran laga bilaabo keenista qalabka ilaa habaynta kobaca kadib, taasoo u suurtagelinaysa macaamiisha inay gaaraan wax soo saar kiristaal sapphire ah oo kharash-ool ah, oo waxqabad sare leh.