Badeecadaha
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AlN oo ku taal FSS 2 inji 4 inji NPSS/FSS Qaabka AlN ee aagga semiconductor-ka
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Gallium Nitride (GaN) Epitaxial oo lagu beeray Sapphire Wafers 4 inji 6 inji ah oo loogu talagalay MEMS
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Gallium Nitride oo ku taal Silicon Wafer 4inji 6inji ah oo loogu talagalay Jihaynta Substrate-ka Si, iska caabinta, iyo Ikhtiyaarada Nooca N/P
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Wafers Epitaxial ah oo GaN-on-SiC ah oo loo habeeyey (100mm, 150mm) – Xulashooyinka Substrate-ka SiC ee Badan (4H-N, HPSI, 4H/6H-P)
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Wafers GaN-on-Diamond ah 4 inji 6 inji Wadarta dhumucda epi (micron) 0.6 ~ 2.5 ama loo habeeyey Codsiyada Soo Noqnoqoshada Sare leh
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Sanduuqa side-qaadaha FOSB 25 meelood oo loogu talagalay wafer 12 inji ah Meel u dhaxaysa saxda ah ee hawlgallada otomaatiga ah Agab aad u nadiif ah
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12 inji (300mm) Sanduuqa rarista hore ee furitaanka sanduuqa rarista wafer-ka FOSB 25 xabbo oo loogu talagalay maaraynta iyo rarista Wafer-ka Hawlgallada otomaatiga ah
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Muraayadaha Silikoonka (Si) ee Sax ah - Cabbirrada iyo Dahaarka Gaarka ah ee loogu talagalay Optoelectronics iyo Sawir-qaadista Infrared
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Muraayadaha Silikoonka Keli ah ee Nadiifka Sare leh ee loo habeeyey - Cabbirrada iyo Dahaarka loogu talagalay Codsiyada Infrared iyo THZ (1.2-7µm, 8-12µm)
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Daaqadda Aragga ee Sapphire ee Nooca Tallaabada ah, Al2O3 Keli ah, Nadiifin Sare, Dhexroor 45mm, Dhumucdiisuna 10mm, La jaray oo la safeeyey
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Daaqadda Tallaabada Sapphire ee Waxqabadka Sare leh, Al2O3 Keli ah oo Crystal ah, Dahaar Daahsan, Qaabab iyo Cabbirro Gaar ah oo loogu talagalay Codsiyada Indhaha ee Saxda ah
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Biinanka Qaadista Sapphire-ka ee Waxqabadka Sare leh, Keli Al2O3 ah oo saafi ah oo loogu talagalay Nidaamyada Wafer-ka - Cabbirrada Gaarka ah, Waara Sare ee Codsiyada Sax ah