Alaabta muhiimka ah ee ceeriin ee wax soo saarka semiconductor: Noocyada Wafer Substrates

Wafer Substrates sida Walxaha Muhiimka ah ee Qalabka Semiconductor

Substrates-ka Waferku waa sidayaasha jireed ee aaladaha semiconductor, iyo agabkooda agabka ayaa si toos ah u go'aamiya waxqabadka aaladda, qiimaha, iyo goobaha codsiga. Hoos waxaa ah noocyada ugu muhiimsan ee substrates wafer oo ay la socdaan faa'iidooyinkooda iyo faa'iidooyinkooda:

1.Silikoon (Si)

• Wadaagga Suuqa:Waxay ku xisaabtamaan in ka badan 95% ee suuqa semiconductor ee caalamiga ah.

• Faa'iidooyinka:

  • Qiimaha jaban:Qalab cayriin ah oo badan (silicon dioxide), hababka wax soo saarka ee qaan-gaadhka ah, iyo dhaqaalaha xooggan ee miisaanka.

  • Waafaqid habsocodka sare:Tignoolajiyada CMOS aad bay u bislaaday, taageerta noodhka horumarsan (tusaale, 3nm).

  • Tayada crystal heer sare ah:Waferrada dhexroorka waaweyn (badanaa 12-inch, 18-inch oo horumarsan) oo leh cufnaanta cilladaysan waa la kori karaa.

  • Guryaha farsamada ee deggan:Fudud in la gooyo, la xiirto, oo la qabto.

• Khasaaraha:

  • Xajmiga dhuuban (1.12 eV):Diidista sare ee heerkulka sare, xaddidaya waxtarka qalabka korontada.

  • bandheynta aan tooska ahayn:Waxtarka iftiinka iftiinka oo aad u hooseeya, oo aan ku habboonayn aaladaha optoelectronic sida LEDs iyo lasers.

  • Dhaqdhaqaaqa elektarooniga ah ee xaddidan:Waxqabadka soo noqnoqda sare ee hooseeya marka loo eego semiconductors-ka kooban.
    

2.Gallium Arsenide (GaAs)

• Codsiyada:Aaladaha RF-ga-sare ee soo noqnoqda (5G/6G), aaladaha optoelectronic (laser, unugyada cadceedda).

• Faa'iidooyinka:

  • Dhaqdhaqaaqa elektarooniga ah ee sarreeya (5-6× kan silikoon):Ku haboon codsiyada xawaaraha sare leh sida isgaadhsiinta milimitirka.

  • Xajmiga tooska ah (1.42 eV):Beddelka sawir-qaadista ee waxtarka sare leh, aasaaska leysarka infrared iyo LEDs.

  • heerkulka sare iyo caabbinta shucaaca:Ku haboon hawada hawada iyo jawiga adag.

• Khasaaraha:

  • Qiimaha sare:Walxaha yar yar, korriinka crystal adag (u nugul meel la'aanta), cabbirka waferka oo xaddidan (badanaa 6-inch).

  • Makaanikada jaban:U nugul jabka, taasoo keenta dhalidda ka shaqaynta oo hoosaysa.

  • Sunta:Arsenic waxay u baahan tahay maarayn adag iyo kontorool deegaan.

3. Silicon Carbide (SiC)

• Codsiyada:Heerkulka sare iyo aaladaha tamarta korantada sare (EV inverters, charging stations), hawada sare.

• Faa'iidooyinka:

  • Xajmiga ballaaran (3.26 eV):Xooga jabinta sare (10x ee silikoon), dulqaad heerkul sare ah (heerkulka hawlgalka>200 °C).

  • Dhaqdhaqaaqa kulaylka sare (≈3× silicon):Kala daadinta kulaylka ugu fiican, awood u siinaya cufnaanta nidaamka sare.

  • Luminta beddelka hooseeya:Waxay wanaajisaa waxtarka beddelka awoodda.

• Khasaaraha:

  • Diyaarinta substrate-ka adag:Koritaanka kristanta oo gaabis ah (> 1 toddobaad), xakamaynta cilladaha adag (micropipes, dislocations), kharash aad u sarreeya (5-10 × silicon).

  • Cabbir yar oo wafer ah:Inta badan 4-6 inch; 8-inch oo weli ku hoos jira horumarinta.

  • Way adag tahay in la habeeyo:Aad u adag (Mohs 9.5), samaynta goynta iyo nadiifinta waqti-qaadasho.

4. Gallium Nitride (GAN)

• Codsiyada:Aaladaha awooda badan ee soo noqnoqda (ku dallaca degdega ah, saldhigyada 5G), LEDs/laysarka buluuga ah.

• Faa'iidooyinka:

  • Dhaqdhaqaaqa elektarooniga ah ee aadka u sarreeya + xadhig ballaadhan (3.4 eV):Wuxuu isku daraa soo noqnoqoshada sare (> 100 GHz) iyo waxqabadka korantada sare.

  • Iska caabin hooseeya:Waxay yaraynaysaa khasaaraha qalabka

  • Heteroepitaxy waafaqi:Sida caadiga ah lagu beero silikoon, sapphire, ama substrates SiC, hoos u dhigida qiimaha.

• Khasaaraha:

  • Kobaca hal-crystal-ka badan oo adag:Heteroepitaxy waa mid guud, laakiin isku-dheeli-tir la'aanta lattice waxay soo bandhigtaa cillado.

  • Qiimaha sare:Substrate-ka asalka ah ee GaN waa mid aad qaali u ah (waferka 2-inch wuxuu ku kici karaa dhowr kun oo USD).

  • Caqabadaha la isku halleyn karo:Dhacdooyinka sida burburka hadda jira waxay u baahan yihiin hagaajin.

5. Indium Fosfide (InP)

• Codsiyada:Isgaadhsiinta indhaha ee xawaaraha sare leh (laysers, photodetectors), aaladaha terahertz.

• Faa'iidooyinka:

  • Dhaqdhaqaaqa elektarooniga ah ee aadka u sarreeya:Waxay taageertaa> 100 GHz hawlgalka, oo ka sarreeya GaAs.

  • Bandhi toos ah oo leh mawjadda dhererka dhererka:Qalabka muhiimka ah ee 1.3-1.55 μm isgaarsiinta fiber indhaha.

• Khasaaraha:

  • Jilicsan oo aad qaali u ah:Qiimaha substrate-ka ayaa ka badan 100x silikoon, cabirrada waferka xaddidan (4-6 inch).

6. Sapphire (Al₂O₃)

• Codsiyada:Iftiinka LED (GaN epitaxial substrate), qalabka elektarooniga ah ee macaamiisha ayaa daboolaya muraayadda.

• Faa'iidooyinka:

  • Qiimaha jaban:Aad uga jaban substrates SiC/GaN

  • Degganaanshiyo kiimikaad oo heer sare ah:Daxalka u adkaysta, aad u dahaaran.

  • Hufnaan:Ku habboon qaab-dhismeedka LED-ka toosan.

• Khasaaraha:

  • Is-waafajin la'aanta shafka weyn ee GaN (> 13%):Waxay keentaa cufnaanta cilad sare, oo u baahan lakabyo kayd ah.

  • Dhaqdhaqaaqa kulaylka oo liita (~ 1/20 ee silikoon):Waxay xaddidaysaa waxqabadka LED-yada awoodda sare leh.

7. Substrate-ka dhoobada ah (AlN, BeO, iwm.)

• Codsiyada:Kuleyliyaha kuleyliyaha cutubyada awooda sare leh.

• Faa'iidooyinka:

  • Dahaarka + kulaylka sare ee hawada (AlN: 170-230 W/m·K):Ku habboon baakadaha cufnaanta sare leh.

• Khasaaraha:

  • Aan-hal-crystal:Si toos ah uma taageeri karo kobaca aaladda, oo loo isticmaalo oo kaliya sida baakadaha substrates.

8. Substrates gaar ah

• SOI (Silicon on Insulator):

  • Qaab dhismeedka:Silikoon/SiO₂/ sandwich silikoon.

  • Faa'iidooyinka:Waxay yaraynaysaa awoodda dulin, shucaaca qallafsan, xakamaynta daadinta (loo isticmaalo RF, MEMS).

  • Khasaaraha:30-50% ka qaalisan silikoon badan.

• Quartz (SiO₂):Loo isticmaalo sawir-qaadista iyo MEMS; iska caabin heerkul sare ah laakiin aad u jajaban.

• Dheeman:Substrate-ka kulaylka ugu sarreeya (> 2000 W/m·K), oo hoos yimaada R&D ee kala-baxa kulaylka aadka u daran.

Shaxda Kooban ee Isbarbardhigga

Qodobbada Muhiimka ah ee Xulashada Substrate-ka

• Shuruudaha waxqabadka:GaAs/InP ee soo noqnoqoshada sare; SiC loogu talagalay koronto-sare, heerkul sare; GaAs/InP/GaN ee optoelectronics.

• Caqabadaha qiimaha:Elektrooniga macaamiishu waxay jecel yihiin silikoon; meelaha-dhamaadka sare waxay xaq u yeelan karaan khidmadaha SiC/GaN.

• Kakanaanta isdhexgalka:Silikoonku waa mid aan lagu bedeli karin waafaqid CMOS.

• Maamulka kulaylka:Codsiyada awoodda sare leh waxay door bidaan SiC ama dheeman-ku-saleysan GaN.

• biseylka silsiladda sahayda:Si> Sapphire> GaAs> SiC> GaN> InP.

Isbeddelka Mustaqbalka

Is dhexgalka kala duwan (tusaale, GaN-on-Si, GaN-on-SiC) waxay isku dheellitiraysaa waxqabadka iyo qiimaha, horumarka wadista 5G, baabuurta korantada, iyo xisaabinta tirada.