Wafers Indium Antimonide (InSb) Nooca N Nooca P Epi diyaar u ah oo aan la qallajin Te doped ama Ge doped 2 inji 3 inji dhumucdiisuna tahay 4 inji Indium Antimonide (InSb)
Astaamaha
Xulashooyinka Doping-ka:
1. La'aanta daawada:Wafer-yadan waa kuwo aan lahayn wax daawooyin ah oo ku jira daawada, taasoo ka dhigaysa kuwo ku habboon codsiyada gaarka ah sida koritaanka epitaxial.
2. Nooca N-ga ah ee la duray (Te Doped):Doping Tellurium (Te) waxaa badanaa loo isticmaalaa in lagu abuuro wafer nooca N-ga ah, kuwaas oo ku habboon codsiyada sida dareemayaasha infrared-ka iyo elektarooniga xawaaraha sare leh.
3. Ge Doped (Nooca P):Daawaynta Germanium (Ge) waxaa loo isticmaalaa in lagu abuuro wafers nooca P ah, iyadoo la siinayo dhaqdhaqaaq godad sare ah oo loogu talagalay codsiyada semiconductor-ka ee horumarsan.
Xulashooyinka Cabbirka:
1. Waxaa laga heli karaa dhexroorka 2-inji, 3-inji, iyo 4-inji. Wafer-yadan waxay daboolaan baahiyaha teknoolojiyada ee kala duwan, laga bilaabo cilmi-baarista iyo horumarinta ilaa wax-soo-saarka baaxadda weyn.
2. Dulqaadka dhexroorka saxda ah wuxuu hubiyaa isku dheelitirnaan dhammaan dufcadaha, iyadoo dhexroorkoodu yahay 50.8±0.3mm (wafer 2-inji ah) iyo 76.2±0.3mm (wafer 3-inji ah).
Xakamaynta Dhumucda:
1. Waferada waxaa laga heli karaa dhumucdoodu tahay 500±5μm si loogu isticmaalo waxqabad wanaagsan codsiyada kala duwan.
2. Cabbiraadaha dheeraadka ah sida TTV (Isbeddelka Dhumucda Guud), QOW, iyo Warp si taxaddar leh ayaa loo xakameeyaa si loo hubiyo isku midnimo iyo tayo sare leh.
Tayada Dusha Sare:
1. Waferku wuxuu la socdaa dusha sare oo la safeeyey/la xardhay si loo hagaajiyo waxqabadka indhaha iyo korontada.
2. Dusha sare waxay ku habboon yihiin koritaanka epitaxial, iyagoo bixiya saldhig siman oo loogu talagalay farsamaynta dheeraadka ah ee aaladaha waxqabadka sare leh.
Epi-Ready:
1. Wafer-yada InSb waa kuwo diyaar u ah epi-prepared, taasoo la macno ah in horay loogu daaweeyay hababka dhigista epitaxial. Tani waxay ka dhigaysaa kuwo ku habboon isticmaalka wax soo saarka semiconductor-ka halkaas oo lakabyada epitaxial-ka loo baahan yahay in lagu beero dusha sare ee wafer-ka.
Codsiyada
1. Qalabka Ogaanshaha Infrared-ka:Waferada InSb waxaa si caadi ah loogu isticmaalaa ogaanshaha infrared (IR), gaar ahaan heerka dhexdhexaadka ah ee infrared (MWIR). Waferadani waxay lagama maarmaan u yihiin aragga habeenkii, sawir-qaadista kulaylka, iyo codsiyada spectroscopy-ga infrared-ka.
2. Elektaroonikada Xawaaraha Sare leh:Iyada oo ay ugu wacan tahay dhaqdhaqaaqooda elektarooniga oo sarreeya, wafer-yada InSb waxaa loo isticmaalaa aaladaha elektarooniga ee xawaaraha sare leh sida transistors-ka xawaaraha sare leh, aaladaha ceelka quantum, iyo transistors-ka dhaqdhaqaaqa elektarooniga oo sareeya (HEMTs).
3. Qalabka Ceelka Quantum:Farqiga cidhiidhiga ah iyo dhaqdhaqaaqa elektarooniga ee aadka u fiican ayaa ka dhigaya waferada InSb inay ku habboon yihiin isticmaalka aaladaha ceelka quantum. Qalabkani waa qaybo muhiim ah oo ku jira laysarka, qalabka ogaanshaha, iyo nidaamyada kale ee optoelectronic.
4. Qalabka Spintronic:InSb sidoo kale waxaa lagu baarayaa codsiyada spintronic, halkaas oo loo isticmaalo wareegga elektarooniga ah ee habaynta macluumaadka. Isku-xidhka wareegga-wareegga hooseeya ee walaxda ayaa ka dhigaya mid ku habboon aaladahaan waxqabadka sare leh.
5. Codsiyada Shucaaca Terahertz (THz):Aaladaha ku salaysan InSb waxaa loo isticmaalaa codsiyada shucaaca THZ, oo ay ku jiraan cilmi-baarista sayniska, sawir-qaadista, iyo astaamaha agabka. Waxay awood u siinayaan teknoolojiyadaha horumarsan sida THZ spectroscopy iyo nidaamyada sawir-qaadista THZ.
6. Qalabka Heerkulka Korontada:Sifooyinka gaarka ah ee InSb waxay ka dhigayaan walxo soo jiidasho leh oo loogu talagalay codsiyada kuleylka, halkaas oo loo isticmaali karo in kulaylka loogu beddelo koronto si hufan, gaar ahaan codsiyada gaarka ah sida tignoolajiyada hawada sare ama korontada laga dhaliyo jawi aad u daran.
Cabbiraadaha Badeecada
| Halbeegga | 2-inji | 3-inji | 4-inji |
| Dhexroorka | 50.8±0.3mm | 76.2±0.3mm | - |
| Dhumucda | 500±5μm | 650±5μm | - |
| Dusha sare | La safeeyey/la xardhay | La safeeyey/la xardhay | La safeeyey/la xardhay |
| Nooca Daweynta | Lama qaadan, Lama qaadan, Lama qaadan (N), Lama qaadan (P) | Lama qaadan, Lama qaadan, Lama qaadan (N), Lama qaadan (P) | Lama qaadan, Lama qaadan, Lama qaadan (N), Lama qaadan (P) |
| Jihaynta | (100) | (100) | (100) |
| Xirmo | Keli ah | Keli ah | Keli ah |
| Epi-Ready | Haa | Haa | Haa |
Halbeegyada Korontada ee Te Doped (N-N):
- Dhaqdhaqaaqa: 2000-5000 cm²/V·s
- Iska caabin: (1-1000) Ω·cm
- EPD (Cufnaanta Cilladaha): ≤2000 cillado/cm²
Cabbirrada Korontada ee Ge Doped (Nooca P):
- Dhaqdhaqaaqa: 4000-8000 cm²/V·s
- Iska caabin: (0.5-5) Ω·cm
- EPD (Cufnaanta Cilladaha): ≤2000 cillado/cm²
Gunaanad
Waferada Indium Antimonide (InSb) waa walxo muhiim u ah codsiyada waxqabadka sare leh ee qaybaha elektarooniga, optoelectronics, iyo teknoolojiyada infrared. Iyada oo leh dhaqdhaqaaq elektaroonig ah oo heer sare ah, isku-xidhka wareegga-wareegga hooseeya, iyo noocyo kala duwan oo ikhtiyaarro doping ah (Te ee nooca N, Ge ee nooca P), Waferada InSb waxay ku habboon yihiin in loo isticmaalo aaladaha sida dareemayaasha infrared-ka, transistors-ka xawaaraha sare leh, aaladaha ceelka quantum, iyo aaladaha spintronic.
Waferada waxaa laga heli karaa cabbirro kala duwan (2-inji, 3-inji, iyo 4-inji), iyadoo la adeegsanayo xakamaynta dhumucda saxda ah iyo dusha sare ee diyaarsan, taasoo hubinaysa inay buuxiyaan baahiyaha adag ee farsamaynta semiconductor-ka casriga ah. Waferadani waxay ku habboon yihiin codsiyada meelaha sida ogaanshaha IR, elektaroonigga xawaaraha sare leh, iyo shucaaca THZ, taasoo awood u siinaysa teknoolojiyadaha horumarsan ee cilmi-baarista, warshadaha, iyo difaaca.
Jaantus Faahfaahsan
