Gallium Nitride oo ku taal Silicon Wafer 4inji 6inji ah oo loogu talagalay Jihaynta Substrate-ka Si, iska caabinta, iyo Ikhtiyaarada Nooca N/P

Sharaxaad Gaaban:

Wafers-keena gaarka ah ee Gallium Nitride ee Silicon (GaN-on-Si) waxaa loogu talagalay inay daboolaan baahiyaha sii kordhaya ee codsiyada elektaroonigga ah ee soo noqnoqda sare iyo kuwa awoodda sare leh. Waxaa laga heli karaa labadaba cabbirrada wafer-ka 4-inji iyo 6-inji, wafers-kani waxay bixiyaan ikhtiyaarro habayn ah oo loogu talagalay jihada substrate-ka Si, iska caabinta, iyo nooca doping-ka (N-nooca/nooca P) si ay ugu habboonaadaan baahiyaha codsiga gaarka ah. Tiknoolajiyadda GaN-on-Si waxay isku daraysaa faa'iidooyinka gallium nitride (GaN) iyo substrate-ka silicon (Si) ee qiimaha jaban, taasoo awood u siinaysa maaraynta kulaylka oo wanaagsan, hufnaan sare, iyo xawaaraha wareejinta oo dhakhso badan. Iyada oo leh bandgap-kooda ballaaran iyo iska caabin koronto oo hooseeya, wafers-kani waxay ku habboon yihiin beddelka awoodda, codsiyada RF, iyo nidaamyada wareejinta xogta xawaaraha sare leh.

Noo soo dir emayl

Astaamaha

●Ballaca Ballaaran:GaN (3.4 eV) waxay bixisaa horumar la taaban karo oo ku saabsan waxqabadka soo noqnoqda sare, awoodda sare, iyo heerkulka sare marka loo eego silicon-ka dhaqameed, taasoo ka dhigaysa mid ku habboon aaladaha korontada iyo amplifiers-ka RF.
● Jihaynta Substrate-ka Si ee la habeyn karo:Ka dooro jihooyinka kala duwan ee Si substrate-ka sida <111>, <100>, iyo kuwa kale si aad ula jaanqaado shuruudaha qalabka gaarka ah.
● Iska caabinta Gaarka ah:Xullo ikhtiyaarrada iska caabinta kala duwan ee Si, laga bilaabo nus-insulating ilaa iska caabin sare iyo iska caabin hoose si loo wanaajiyo waxqabadka qalabka.
● Nooca Daweynta:Waxaa laga heli karaa nooca N-nooca ama nooca P-nooca si loogu waafajiyo shuruudaha aaladaha korontada, transistors-ka RF, ama LED-yada.
● Danab Jaban oo Sare:Wafer-yada GaN-on-Si waxay leeyihiin danab jab sare (ilaa 1200V), taasoo u oggolaanaysa inay maareeyaan codsiyada danab sare leh.
● Xawaaraha Beddelka Degdegga ah:GaN waxay leedahay dhaqdhaqaaq elektaroonig ah oo ka sarreeya iyo khasaarooyin beddelaad oo ka hooseeya silicon, taasoo ka dhigaysa wafers-ka GaN-on-Si mid ku habboon wareegyada xawaaraha sare leh.
● Waxqabadka Kulaylka oo La Kordhiyay:Iyadoo ay jirto koronto-qaadis yar oo silicon ah, GaN-on-Si wali waxay bixisaa xasillooni kuleyl oo heer sare ah, iyadoo leh kuleyl ka wanaagsan aaladaha silicon-ka dhaqameed.

Tilmaamaha Farsamada

Halbeegga	Qiimaha
Cabbirka Wafer-ka	4-inji, 6-inji
Jihaynta Substrate-ka Si	<111>, <100>, gaar ah
Iska caabinta Si	Iska caabin sare, dahaadh nus-dabool ah, iska caabin hoose
Nooca Daweynta	Nooca N, Nooca P
Dhumucda Lakabka GaN	100 nm - 5000 nm (la habeyn karo)
Lakabka Caqabadda AlGaN	24% - 28% Al (caadi ahaan 10-20 nm)
Danabka Burburka	600V – 1200V
Dhaqdhaqaaqa Elektarooniga	2000 cm²/V·s
Soo noqnoqoshada Beddelka	Ilaa 18 GHz
Qalafsanaanta Dusha Wafer-ka	RMS ~0.25 nm (AFM)
Iska caabbinta Xaashida GaN	437.9 Ω·cm²
Wadarta Wafer Warp	< 25 µm (ugu badnaan)
Qaboojinta Kulaylka	1.3 – 2.1 W/cm·K

Codsiyada

Elektarooniga Korontada: GaN-on-Si waa mid ku habboon qalabka elektarooniga korontada sida qalabka korontada, qalabka wax lagu beddelo, iyo qalabka korontada ee loo isticmaalo nidaamyada tamarta la cusboonaysiin karo, gawaarida korontada (EVs), iyo qalabka warshadaha. Danabkeeda burburka sare iyo iska caabinta hoose waxay hubiyaan beddelka korontada oo hufan, xitaa codsiyada awoodda sare leh.

Isgaarsiinta RF iyo MicrowaveGaN-on-Si wafers waxay bixiyaan awoodo soo noqnoqosho sare leh, taasoo ka dhigaysa kuwo ku habboon cod-weyneeyayaasha awoodda RF, isgaarsiinta dayax-gacmeedka, nidaamyada radar, iyo teknoolojiyada 5G. Iyada oo leh xawaare sare oo beddelaad ah iyo awoodda lagu shaqeeyo soo noqnoqoshada sare (ilaa18 GHz), aaladaha GaN waxay bixiyaan waxqabad heer sare ah barnaamijyadan.

Elektaroonikada GawaaridaGaN-on-Si waxaa loo isticmaalaa nidaamyada korontada baabuurta, oo ay ku jiraanDareeraha saaran (OBCs)iyoBeddelayaasha DC-DCAwooddeeda ay ku shaqeyn karto heerkul sare iyo u adkeysiga heerarka danabka sare waxay ka dhigaysaa mid ku habboon codsiyada baabuurta korontada ku shaqeeya ee u baahan beddel awood oo adag.

LED iyo OptoelectronicsGaN waa agabka la door bidayo LED-yada buluugga iyo caddaanka ahWafer-yada GaN-on-Si waxaa loo isticmaalaa in lagu soo saaro nidaamyada nalalka LED-ka ee waxtarka sare leh, iyagoo bixiya waxqabad aad u wanaagsan oo ku saabsan nalalka, teknoolojiyada bandhigga, iyo isgaarsiinta indhaha.

S&J

S1: Waa maxay faa'iidada GaN marka loo eego siliconka aaladaha elektaroonigga ah?

A1:GaN waxay leedahayfarqiga band-ga ballaaran (3.4 eV)marka loo eego silicon (1.1 eV), taas oo u oggolaanaysa inay u adkaysato danab sare iyo heerkul sare. Hantidani waxay u suurtogelinaysaa GaN inay si hufan u maareyso codsiyada awoodda sare leh, iyadoo yareynaysa luminta awoodda iyo kordhinta waxqabadka nidaamka. GaN waxay sidoo kale bixisaa xawaare beddel degdeg ah, kuwaas oo muhiim u ah aaladaha soo noqnoqda sare sida amplifiers-ka RF iyo beddelayaasha awoodda.

S2: Ma habayn karaa jihada substrate-ka Si ee codsigayga?

A2:Haa, waan bixinaaJihooyinka substrate-ka ee la habeyn karosida<111>, <100>, iyo jihooyin kale oo ku xiran shuruudaha qalabkaaga. Jihaynta substrate-ka Si waxay door muhiim ah ka ciyaartaa waxqabadka qalabka, oo ay ku jiraan astaamaha korantada, dhaqanka kulaylka, iyo xasilloonida farsamada.

S3: Waa maxay faa'iidooyinka isticmaalka wafer-yada GaN-on-Si ee loogu talagalay codsiyada soo noqnoqda ee sare?

A3:Waferada GaN-on-Si waxay bixiyaan tayo sare lehbeddelka xawaaraha, taasoo suurtogalinaysa hawlgal degdeg ah oo ku yimaada mawjado sare marka loo eego silicon. Tani waxay ka dhigaysaa kuwo ku habboonRFiyomicrowave-kacodsiyada, iyo sidoo kale soo noqnoqoshada sareaaladaha korontadasidaHEMTs(Transistors-ka Dhaqdhaqaaqa Elektarooniga Sare) iyoXoojiyeyaasha RFDhaqdhaqaaqa elektaroonigga ee sare ee GaN wuxuu sidoo kale keenaa khasaarooyin yar oo beddelaad ah iyo hufnaan wanaagsan.

S4: Waa maxay ikhtiyaarrada daawada lagu daro ee loo heli karo buskudka GaN-on-Si?

A4:Waxaan bixinaa labadabaNooca N-gaiyoNooca P-gafursadaha doping-ka, kuwaas oo badanaa loo isticmaalo noocyada kala duwan ee aaladaha semiconductor-ka.Daweynta nooca N-ga ahwaa ku habboon tahaytransistors-ka awooddaiyoXoojiyeyaasha RF, halkaDaweynta nooca P-ga ahwaxaa badanaa loo isticmaalaa aaladaha optoelectronic sida LED-yada.

Gunaanad

Wafers-keena gaarka ah ee Gallium Nitride ee Silicon (GaN-on-Si) ayaa bixiya xalka ugu habboon ee codsiyada soo noqnoqda sare, awoodda sare, iyo heerkulka sare. Iyada oo la adeegsanayo jihooyinka substrate-ka Si ee la beddeli karo, iska caabinta, iyo doping-ka nooca N-nooca/P, wafers-kan waxaa loogu talagalay inay daboolaan baahiyaha gaarka ah ee warshadaha oo u dhexeeya qalabka elektaroonigga korontada iyo nidaamyada baabuurta ilaa isgaarsiinta RF iyo teknoolojiyada LED. Iyagoo ka faa'iideysanaya sifooyinka sare ee GaN iyo ballaarinta silicon, wafers-kan waxay bixiyaan waxqabad la xoojiyay, hufnaan, iyo difaac mustaqbalka aaladaha jiilka soo socda.