Lakabka Epitaxial
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200mm 8inch GaN oo ku dul taal sapphire Epi-lakab wafer substrate
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Substrate Heer Sare ah oo loogu talagalay Qalabka Codka ee RF (LNOSiC)
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GaN oo ku jira Muraayadaha 4-Inji: Xulashooyinka Muraayadaha ee la habeyn karo oo ay ku jiraan JGS1, JGS2, BF33, iyo Quartz Caadi ah
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Wafer AlN-on-NPSS: Lakab Aluminium Nitride ah oo Waxqabad Sare leh oo ku yaal Substrate Sapphire ah oo aan la safayn oo loogu talagalay Codsiyada Heerkulka Sare, Awoodda Sare, iyo RF
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Wafers Epitaxial ah oo GaN-on-SiC ah oo loo habeeyey (100mm, 150mm) – Xulashooyinka Substrate-ka SiC ee Badan (4H-N, HPSI, 4H/6H-P)
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Wafers GaN-on-Diamond ah 4 inji 6 inji Wadarta dhumucda epi (micron) 0.6 ~ 2.5 ama loo habeeyey Codsiyada Soo Noqnoqoshada Sare leh
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GaAs substrate-ka wafer-ka ee awoodda sare leh ee gallium arsenide wafer-ka awoodda leh ee laysarka hirarka 905nm ee daaweynta caafimaadka laysarka
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Qalabka sawir-qaadaha ee loo yaqaan 'PD Array photodetector' ee loo yaqaan 'Epitaxial wafer substrate' ee InGaAs ayaa loo isticmaali karaa LiDAR.
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2inji 3inji 4inji InP epitaxial wafer substrate APD light detector oo loogu talagalay isgaarsiinta fiber optic ama LiDAR
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6inch SiC Wafer Epitaxiy Nooca N/P waa la aqbalayaa oo la habeeyey
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Wafer 4 inji ah oo SiC Epi ah oo loogu talagalay MOS ama SBD
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Substrate-ka Silicon-On-Insulator-ka ah ee SOI wuxuu saddex lakab u yahay Microelectronics-ka iyo Soo noqnoqoshada Raadiyaha.