Dia150mm 4H-N 6inch substrate SiC Soo saarista iyo heerka been abuurka ah

Astaamaha ugu muhiimsan ee waferada silicon carbide mosfet ee 6 inji ah waa sidan soo socota;.

Danab sare u adkaysta: Karboode-ka Silicon wuxuu leeyahay garoon koronto oo jaban oo sareeya, sidaa darteed wafer-ka 6 inji ee silicon carbide-ka mosfet wuxuu leeyahay awood u adkaysta danab sare, oo ku habboon xaaladaha isticmaalka danab sare.

Cufnaanta hadda jirta oo sareysa: Kaarboohaydraytka silikoonku wuxuu leeyahay dhaqdhaqaaq elektaroonik ah oo weyn, taasoo ka dhigaysa waferka mosfet ee silikoonka ah ee 6-inji ah inay leeyihiin cufnaan hadda oo weyn si ay u adkaystaan ​​​​current weyn.

Soo noqnoqoshada hawlgalka sare: Kaarboohaydraytka Silicon wuxuu leeyahay dhaqdhaqaaq side oo hooseeya, taasoo ka dhigaysa wafers-ka 6-inji ah ee silicon carbide mosfet inay leeyihiin soo noqnoqosho hawlgal oo sare, oo ku habboon xaaladaha codsiga soo noqnoqoshada sare.

Xasillooni kuleyl oo wanaagsan: Kaarboohaydraytka Silicon wuxuu leeyahay kuleyl gudbin heer sare ah, taasoo ka dhigaysa in wafer-yada mosfet ee silicon carbide ee 6-inji ah ay wali leeyihiin waxqabad wanaagsan oo ku saabsan jawiga heerkulka sare.

Wafers-ka mosfet ee silicon carbide ee 6 inji ah ayaa si weyn loogu isticmaalaa meelaha soo socda: qalabka elektarooniga ah ee korontada, oo ay ku jiraan transformers-ka, rectifiers-ka, inverters-ka, amplifiers-ka korontada, iwm., sida inverters-ka qorraxda, dallacaadda baabuurta tamarta cusub, gaadiidka tareenka, kombaresarada hawada ee xawaaraha sare leh ee unugga shidaalka, beddelaha DC-DC (DCDC), wadista matoorka baabuurta korontada ku shaqeeya iyo isbeddellada dhijitaalka ah ee goobaha xogta iyo meelaha kale ee leh codsiyo badan.

Waxaan bixin karnaa substrate 4H-N 6inch SiC ah, noocyo kala duwan oo ah wafers kayd ah oo substrate ah. Waxaan sidoo kale diyaarin karnaa habayn iyadoo loo eegayo baahiyahaaga. Soo dhawoow weydiimaha!