Wafers Epitaxial ah oo 4H-SiC ah oo loogu talagalay MOSFET-yada Tamarta Aad u Sareysa (100–500 μm, 6 inji)

Wafers Epitaxial ah oo 4H-SiC ah oo loogu talagalay MOSFET-yada Tamarta Sare leh (100–500 μm, 6 inji) Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Kobaca degdegga ah ee gawaarida korontada ku shaqeeya, shabakadaha casriga ah, nidaamyada tamarta la cusboonaysiin karo, iyo qalabka warshadaha ee awoodda sare leh ayaa abuuray baahi degdeg ah oo loo qabo aaladaha semiconductor-ka ee awood u leh inay maareeyaan danab sare, cufnaanta awoodda sare, iyo hufnaan weyn. Ka mid ah semiconductor-yada baaxadda leh,silikoon carbide (SiC)Waxay u taagan tahay farqiga ballaaran ee bandgap-ka, kulaylka sare ee kulaylka, iyo xoogga sare ee goobta korontada ee muhiimka ah.

Noo soo dir emayl

Astaamaha

Jaantus Faahfaahsan

Dulmar Guud oo ku saabsan Badeecada

AnnagaWaferada epitaxial-ka ee 4H-SiCwaxaa si gaar ah loogu farsameeyayCodsiyada MOSFET ee danab aad u sarreeyaIyada oo leh lakabyo epitaxial ah oo u dhexeeya100 μm ilaa 500 μm on Substrate-yo 6-inji ah (150 mm) ah, beryahan waxay bixiyaan gobollada qulqulka dheeraadka ah ee looga baahan yahay aaladaha fasalka kV iyagoo ilaalinaya tayada kirismaalka ee gaarka ah iyo ballaarinta. Dhumucyada caadiga ah waxaa ka mid ah 100 μm, 200 μm, iyo 300 μm, iyadoo la heli karo habayn.

Dhumucda Lakabka Epitaxial

Lakabka epitaxial wuxuu door muhiim ah ka ciyaaraa go'aaminta waxqabadka MOSFET, gaar ahaan dheelitirka u dhexeeyadanab burburayiyoiska caabinta.

100–200 μm: Waxaa loo habeeyay MOSFET-yada danab dhexdhexaad ah ilaa sare, iyagoo bixinaya dheelitirnaan aad u wanaagsan oo hufnaan gudbin iyo xoog xannibaad.
200–500 μm: Ku habboon aaladaha danab-dhalinta aadka u sarreeya (10 kV+), taasoo u suurtagelinaysa gobollada fog ee sifaynta sifada burburka adag.

Guud ahaan baaxadda,Isku-midnimada dhumucda waxaa lagu xakameeyaa gudaha ±2%, hubinta isku dheelitirnaanta laga bilaabo wafer ilaa wafer iyo dufcad ilaa dufcad. Dabacsanaantani waxay u oggolaanaysaa naqshadeeyayaasha inay hagaajiyaan waxqabadka qalabka fasalladooda danab ee bartilmaameedka ah iyagoo ilaalinaya soo-saarista wax soo saarka ballaaran.

Habka Wax Soo Saarka

Wafer-keena waxaa lagu sameeyay iyadoo la isticmaalayoCVD-ga casriga ah (Ka-saarista Uumiga Kiimikada) epitaxy, kaas oo awood u siinaya xakamaynta saxda ah ee dhumucda, dawada, iyo tayada kristalinta, xitaa lakabyada aadka u qaro weyn.

CVD Epitaxy- Gaasaska saafiga ah ee sarreeya iyo xaaladaha la hagaajiyay waxay hubiyaan dusha sare ee siman iyo cufnaanta cilladaha oo hooseeya.
Kobaca Lakabka Qaro weyn- Cuntooyinka habka gaarka ah waxay u oggolaanayaan dhumucda epitaxial ilaa500 μmoo leh isku midnimo aad u fiican.
Xakamaynta Dawooyinka- Xoog-saarid la hagaajin karo oo u dhaxaysa1 × 10¹⁴ – 1 × 10¹⁶ cm⁻³, oo leh isku midnimo ka wanaagsan ±5%.
Diyaarinta Dusha Sare- Wafers-ku way maraanNadiifinta CMPiyo kormeer adag, hubinta in la waafajiyo hababka horumarsan sida oksaydhka albaabka, sawir-qaadista, iyo biraha.

Faa'iidooyinka Muhiimka ah

Awoodda Danab-koronto ee Aad u Sareysa- Lakabyada qaro weyn ee epitaxial (100–500 μm) waxay taageeraan naqshadaha MOSFET ee fasalka kV.
Tayada Crystal-ka ee Gaarka ah- Kala-goysyada hoose iyo cufnaanta cilladaha salka waxay hubiyaan isku halaynta waxayna yareeyaan daadinta.
Substrate-yo waaweyn oo 6-Inji ah- Taageero wax soo saar mug sare leh, kharash yar oo qalabkiiba ah, iyo iswaafajin wanaagsan.
Sifooyinka Kulaylka Sare- Kontoroolka kulaylka sare iyo farqiga ballaaran wuxuu suurtogal ka dhigayaa hawlgal hufan oo leh awood iyo heerkul sare.
Halbeegyada La Habeyn Karo- Dhumucda, dawada, jihada, iyo dhammaystirka dusha sare waxaa loo habeyn karaa shuruudo gaar ah.

Qeexitaannada Caadiga ah

Halbeegga	Faahfaahinta
Nooca Gudbinta	Nooca N (Dawada lagu daweeyay Nitrogen)
Iska caabin	Mid kasta
Xagasha Dhidibka Ka Baxsan	4° ± 0.5° (dhinaca [11-20])
Jihaynta Crystal	(0001) Si-wejiga
Dhumucda	200–300 μm (la habeyn karo 100–500 μm)
Dhammaadka Dusha Sare	Hore: CMP la safeeyey (epi-ready) Dhabarka: la safeeyey ama la safeeyey
TV-ga	≤ 10 μm
Qaanso/Warp	≤ 20 μm

Meelaha Codsiga

Waferada epitaxial-ka ee 4H-SiC ayaa si fiican ugu habboonMOSFET-yada nidaamyada danab-koronto aad u sarreeya, oo ay ku jiraan:

Qalabka korantada ee jiidista gawaarida iyo qaybaha dallacaadda danab sare leh
Qalabka gudbinta shabakadda casriga ah iyo qaybinta
Koronto-dhaliyeyaasha tamarta la cusboonaysiin karo (qorraxda, dabaysha, kaydinta)
Sahayda warshadaha ee awoodda sare leh iyo nidaamyada beddelka

Su'aalaha Badiya La Weydiiyo

S1: Waa maxay nooca conductivity-ga?
A1: Nooca N, oo lagu dahaadhay nitrogen - heerka warshadaha ee MOSFETs iyo aaladaha kale ee korontada.

S2: Waa maxay dhumucda epitaxial-ka ee la heli karo?
A2: 100–500 μm, oo leh ikhtiyaarro caadi ah oo ah 100 μm, 200 μm, iyo 300 μm. Dhumucyo gaar ah ayaa la heli karaa haddii la codsado.

S3: Waa maxay jihada wafer-ka iyo xagasha dhidibka ka baxsan?
A3: (0001) Wajiga Si-wejiga, oo leh 4° ± 0.5° dhidibka ka baxsan jihada [11-20].

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.