3 inji Nadiifnimo Sare oo ah Semi-dahaarka (HPSI) Wafer SiC ah oo 350um ah oo ah darajada ugu sarreysa
Codsiga
Wafer-yada HPSI SiC ayaa muhiim u ah awoodsiinta aaladaha korontada ee jiilka soo socda, kuwaas oo loo isticmaalo codsiyo kala duwan oo waxqabad sare leh:
Nidaamyada Beddelka Korontada: Wafer-yada SiC waxay u adeegaan sidii agabka ugu muhiimsan ee aaladaha korontada sida MOSFET-yada awoodda leh, diode-yada, iyo IGBT-yada, kuwaas oo muhiim u ah beddelka awoodda wax ku oolka ah ee wareegyada korantada. Qaybahan waxaa laga helaa sahayda korontada ee waxtarka sare leh, darawallada matoorka, iyo inverters-yada warshadaha.
Gawaarida Korontada (EVs):Baahida sii kordheysa ee baabuurta korontada ku shaqeeya waxay u baahan tahay isticmaalka elektaroonigga awoodda badan ee hufan, iyo wafer-ka SiC ayaa hormuud ka ah isbeddelkan. Wafer-yada awoodda korontada ku shaqeeya ee EV, wafer-yadani waxay bixiyaan hufnaan sare iyo awoodo beddel degdeg ah, kuwaas oo gacan ka geysta waqtiyada dallacaadda oo dhakhso badan, masaafada dheer, iyo waxqabadka guud ee gaadiidka oo la wanaajiyay.
Tamarta La Cusboonaysiin Karo:Nidaamyada tamarta la cusboonaysiin karo sida tamarta qorraxda iyo dabaysha, wafer-yada SiC waxaa loo isticmaalaa inverters-ka iyo converters-ka kuwaas oo awood u siinaya qabashada iyo qaybinta tamarta oo hufan. Kobcinta kulaylka sare iyo danab jabitaan oo sarreeya oo SiC ah ayaa hubiya in nidaamyadani ay si kalsooni leh u shaqeeyaan, xitaa xaaladaha deegaanka ee aadka u daran.
Otomaatigga Warshadaha iyo Robotics-ka:Qalabka elektaroonigga ah ee awoodda sare leh ee nidaamyada otomaatiga warshadaha iyo robot-yada waxay u baahan yihiin qalab awood u leh inay si dhakhso ah u beddelaan, u maareeyaan culaysyo waaweyn oo koronto, iyo inay ku shaqeeyaan cadaadis sare. Semiconductors-ka ku salaysan SiC waxay buuxiyaan shuruudahan iyagoo bixinaya hufnaan iyo adkeysi sare, xitaa jawiga hawlgalka ee adag.
Nidaamyada Isgaarsiinta:Kaabayaasha isgaarsiinta, halkaas oo isku hallayn sare iyo beddelka tamarta hufan ay muhiim yihiin, wafer-ka SiC waxaa loo isticmaalaa sahayda korontada iyo beddelayaasha DC-DC. Aaladaha SiC waxay gacan ka geystaan yareynta isticmaalka tamarta waxayna kor u qaadaan waxqabadka nidaamka ee xarumaha xogta iyo shabakadaha isgaarsiinta.
Iyada oo bixinaysa aasaas adag oo loogu talagalay codsiyada awoodda sare leh, wafer-ka HPSI SiC wuxuu suurtogal ka dhigayaa horumarinta aaladaha tamarta wax ku oolka ah, isagoo ka caawinaya warshadaha inay u gudbaan xalal cagaaran oo waara.
Guryaha
| hawlgal | Heerka Wax Soo Saarka | Darajada Cilmi-baarista | Fasalka Madow |
| Dhexroorka | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm |
| Dhumucda | 350 µm ± 25 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Jihaynta Wafer-ka | Dhidibka: <0001> ± 0.5° | Dhidibka: <0001> ± 2.0° | Dhidibka: <0001> ± 2.0° |
| Cufnaanta Tuubooyinka Yaryar ee 95% Wafers-ka (MPD) | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Iska caabinta Korontada | ≥ 1E7 Ω·cm | ≥ 1E6 Ω·cm | ≥ 1E5 Ω·cm |
| Dopant | Lama isticmaalin | Lama isticmaalin | Lama isticmaalin |
| Jihada Fidsan ee Aasaasiga ah | {11-20} ± 5.0° | {11-20} ± 5.0° | {11-20} ± 5.0° |
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm |
| Dhererka Fidsan ee Labaad | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Jihada Fidsan ee Labaad | Si wejigeeda kor u jeeda: 90° CW laga bilaabo guriga koowaad ± 5.0° | Si wejigeeda kor u jeeda: 90° CW laga bilaabo guriga koowaad ± 5.0° | Si wejigeeda kor u jeeda: 90° CW laga bilaabo guriga koowaad ± 5.0° |
| Ka-saarista Cidhifka | 3 mm | 3 mm | 3 mm |
| LTV/TTV/Qaanso/Warp | 3 µm / 10 µm / ± 30 µm / 40 µm | 3 µm / 10 µm / ± 30 µm / 40 µm | 5 µm / 15 µm / ± 40 µm / 45 µm |
| Qalafsanaanta Dusha sare | Wajiga C: La safeeyey, Si-waji: CMP | Wajiga C: La safeeyey, Si-waji: CMP | Wajiga C: La safeeyey, Si-waji: CMP |
| Dildilaacyo (oo lagu baaro iftiin xooggan) | Midna ma jiro | Midna ma jiro | Midna ma jiro |
| Taarikada Hex (oo lagu baaro iftiin xooggan) | Midna ma jiro | Midna ma jiro | Aagga guud 10% |
| Meelaha Nooca Badan leh (oo lagu baaro iftiin xooggan) | Aagga wadarta 5% | Aagga wadarta 5% | Aagga guud 10% |
| Xoqitaan (oo lagu baaro iftiin xooggan) | ≤ 5 xoqan, dhererka wadarta ≤ 150 mm | ≤ 10 xoqan, dhererka wadarta ≤ 200 mm | ≤ 10 xoqan, dhererka wadarta ≤ 200 mm |
| Jabinta geeska | Lama oggola ≥ 0.5 mm ballac iyo qoto dheer | 2 la oggol yahay, ≤ 1 mm ballac iyo qoto dheer | 5 la oggol yahay, ≤ 5 mm ballac iyo qoto dheer |
| Wasakhowga Dusha Sare (oo lagu baaro iftiin xooggan) | Midna ma jiro | Midna ma jiro | Midna ma jiro |
Faa'iidooyinka Muhiimka ah
Waxqabadka Heerkulka Sare: Hab-dhaqanka kulaylka sare ee SiC wuxuu hubiyaa kala-baxa kulaylka hufan ee aaladaha korontada, taasoo u oggolaanaysa inay ku shaqeeyaan heerar koronto oo sarreeya iyo mawjado iyada oo aan la kululayn. Tani waxay u tarjumeysaa nidaamyo yaryar, hufan iyo cimri hawlgal oo dheer.
Danab Jaban oo Sare: Iyada oo leh faa'iido ballaaran marka loo eego silicon, wafers-ka SiC waxay taageeraan codsiyada danab sare, taasoo ka dhigaysa kuwo ku habboon qaybaha elektaroonigga ah ee awoodda u leh inay u adkeystaan danab jaban oo sare, sida baabuurta korontada, nidaamyada korontada, iyo nidaamyada tamarta la cusboonaysiin karo.
Hoos u dhaca Awoodda: Xawaaraha iska caabbinta yar iyo xawaaraha wareejinta degdegga ah ee aaladaha SiC waxay keenaan hoos u dhaca tamarta inta lagu jiro hawlgalka. Tani ma aha oo kaliya inay hagaajiso hufnaanta laakiin sidoo kale waxay kor u qaadaysaa keydinta tamarta guud ee nidaamyada lagu rakibay.
Kalsoonida La Kordhiyay ee Deegaannada Adag: Astaamaha agabka adag ee SiC waxay u oggolaanayaan inay ku shaqeyso xaalado aad u daran, sida heerkulka sare (ilaa 600°C), danab sare, iyo mawjado sare. Tani waxay ka dhigaysaa wafer-ka SiC mid ku habboon codsiyada warshadaha, baabuurta, iyo tamarta ee adag.
Waxtarka Tamarta: Qalabka SiC waxay bixiyaan cufnaan koronto oo ka sarreysa aaladaha dhaqameed ee ku salaysan silikoon, iyagoo yareynaya cabbirka iyo miisaanka nidaamyada elektaroonigga ah ee awoodda leh iyagoo hagaajinaya waxtarkooda guud. Tani waxay keenaysaa keydin kharash iyo raad yar oo deegaan ah oo ku saabsan codsiyada sida tamarta la cusboonaysiin karo iyo gawaarida korontada.
Cabbiraadda: Dhexroorka 3-inji iyo dulqaadka saxda ah ee wax soo saarka ee wafer-ka HPSI SiC wuxuu hubiyaa in la miisaami karo wax soo saarka ballaaran, isagoo buuxinaya shuruudaha cilmi-baarista iyo wax soo saarka ganacsiga labadaba.
Gunaanad
Wafer-ka HPSI SiC, oo leh dhexroor 3-inji ah iyo dhumucdiisuna tahay 350 µm ± 25 µm, waa agabka ugu habboon jiilka soo socda ee aaladaha elektaroonigga ah ee awoodda sare leh. Isku-darka gaarka ah ee gudbinta kulaylka, danab jab sare, luminta tamarta oo hooseysa, iyo isku halaynta xaaladaha daran ayaa ka dhigaya qayb muhiim ah oo loogu talagalay codsiyada kala duwan ee beddelka korontada, tamarta la cusboonaysiin karo, gawaarida korontada, nidaamyada warshadaha, iyo isgaarsiinta.
Wafer-kan SiC wuxuu si gaar ah ugu habboon yahay warshadaha doonaya inay gaaraan hufnaan sare, keydin tamar oo weyn, iyo isku halaynta nidaamka oo la hagaajiyay. Maadaama tignoolajiyada elektaroonigga korontada ay sii socoto inay horumarto, wafer-ka HPSI SiC wuxuu bixiyaa aasaaska horumarinta xalalka tamarta ee jiilka soo socda, taasoo horseedaysa u gudubka mustaqbal waara oo kaarboon yar.
Jaantus Faahfaahsan
