Wafer 3 inji ah 76.2mm 4H-Semi SiC ah oo leh substrate Silicon Carbide Wafers SiC ah oo nus-cay ah
Qeexitaanka Badeecada
Wafers-ka substrate-ka ah ee 3-inji ah ee 4H semi-insulated SiC (silicon carbide) waa walxo semiconductor ah oo si caadi ah loo isticmaalo. 4H waxay muujinaysaa qaab-dhismeedka kiristaalka tetrahexahedral. Semi-insulation macnaheedu waa in substrate-ku uu leeyahay astaamo iska caabin sare leh oo laga sooci karo qulqulka hadda jira.
Wafer-yada noocan oo kale ah waxay leeyihiin astaamaha soo socda: kontoroolka kulaylka sare, luminta gudbinta oo hooseysa, iska caabin heerkul sare oo aad u fiican, iyo xasillooni farsamo iyo kiimiko oo aad u fiican. Sababtoo ah carbide-ka silicon wuxuu leeyahay tamar ballaaran wuxuuna u adkeysan karaa heerkulka sare iyo xaaladaha sare ee goobta korantada, wafer-yada 4H-SiC ee nus-daboolan ayaa si weyn loogu isticmaalaa qalabka elektaroonigga korontada iyo soo noqnoqoshada raadiyaha (RF).
Codsiyada ugu muhiimsan ee 4H-SiC-ga boodhadhka semi-insulated waxaa ka mid ah:
1--Electronikada Awoodda leh: Wafer-yada 4H-SiC waxaa loo isticmaali karaa in lagu soo saaro aaladaha beddelka korontada sida MOSFETs (Transistors-ka Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Transistors-ka Gate Bipolar ee Insulated Gate) iyo diode-yada Schottky. Qalabkani wuxuu leeyahay khasaare gudbin iyo beddelaad oo hooseeya oo ku yimaada danab sare iyo jawi heerkul sare leh waxayna bixiyaan hufnaan iyo isku hallayn sare.
2--Qalabka Soo Noqnoqoshada Raadiyaha (RF): Wafer-yada nus-daboolan ee 4H-SiC waxaa loo isticmaali karaa in lagu sameeyo awood sare, amplifiers-ka awoodda RF ee soo noqnoqda sare, iska caabbinta jajabka, shaandheeyayaasha, iyo aaladaha kale. Silicon carbide waxay leedahay waxqabad soo noqnoqosho sare oo wanaagsan iyo xasillooni kuleyl oo wanaagsan sababtoo ah heerka qulqulka elektaroonigga ee weyn iyo hufnaanta kulaylka oo sareysa.
3--Qalabka Optoelectronic: Wafers-ka nus-insulated 4H-SiC waxaa loo isticmaali karaa in lagu soo saaro diode-yada laysarka awoodda sare leh, qalabka ogaanshaha iftiinka UV iyo wareegyada isku dhafan ee optoelectronic.
Marka laga hadlayo jihada suuqa, baahida loo qabo wafer-ka semi-insulated 4H-SiC ayaa sii kordheysa iyadoo ay sii kordhayaan beeraha korontada, RF iyo optoelectronics. Tani waxay sabab u tahay xaqiiqda ah in silicon carbide uu leeyahay codsiyo kala duwan, oo ay ku jiraan hufnaanta tamarta, gawaarida korontada, tamarta la cusboonaysiin karo iyo isgaarsiinta. Mustaqbalka, suuqa wafer-ka semi-insulated 4H-SiC ayaa weli ah mid aad u rajo leh waxaana la filayaa inuu beddelo agabka silicon-ka caadiga ah ee codsiyada kala duwan.
Jaantus Faahfaahsan




