12 inji SIC substrate silicon carbide dhexroorka heerka ugu sarreeya 300mm cabbir weyn 4H-N Ku habboon kala-baxa kulaylka qalabka awoodda sare leh

12 inji SIC substrate silicon carbide dhexroor heer sare ah 300mm cabbir weyn 4H-N Ku habboon kala firdhinta kulaylka qalabka awoodda sare leh Sawirka la soo bandhigay

Sharaxaad Gaaban:

Substrate silicon carbide ah oo 12-inji ah (SiC substrate) waa substrate cabbir weyn leh oo waxqabad sare leh oo laga sameeyay hal kiristaal oo ah silicon carbide. Silicon carbide (SiC) waa walax semiconductor ah oo leh sifooyin koronto, kuleyl iyo farsamo oo aad u fiican, kaas oo si weyn loogu isticmaalo soo saarista aaladaha elektarooniga ah ee jawiga awoodda sare, soo noqnoqoshada sare iyo heerkulka sare. Substrate-ka 12-inji ah (300mm) waa qeexitaanka horumarsan ee hadda jira ee tignoolajiyada silicon carbide, kaas oo si weyn u hagaajin kara hufnaanta wax soo saarka iyo yaraynta kharashyada.

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Astaamaha

Astaamaha alaabta

1. Gudbinta kulaylka sare: Gudbinta kulaylka ee carbide-ka silicon waxay ka badan tahay 3 jeer ka silicon, taas oo ku habboon kala-baxa kulaylka qalabka awoodda sare leh.

2. Xoogga sare ee goobta burburka: Xoogga goobta burburka waa 10 jeer ka badan silicon, oo ku habboon codsiyada cadaadiska sare leh.

3.Ballaca ballaaran: Balaca ballaaran waa 3.26eV (4H-SiC), oo ku habboon heerkulka sare iyo codsiyada soo noqnoqda sare.

4. Adkaysi sare: Adkaanshaha Mohs waa 9.2, oo kaliya ka dambeysa dheemanka, iska caabin aad u fiican oo xirasho iyo xoog farsamo.

5. Xasillooni kiimiko: iska caabin xoog leh oo daxalka ah, waxqabad deggan heerkulka sare iyo jawiga adag.

6. Cabbir weyn: Substrate 12 inji ah (300mm), waxay hagaajisaa hufnaanta wax soo saarka, waxayna yareysaa kharashka cutubka.

7. Cufnaanta cilladaha hooseeya: tiknoolajiyadda kobaca kiristaalka hal-hal oo tayo sare leh si loo hubiyo cufnaanta cilladaha hooseeya iyo joogteynta sare.

Tilmaamaha codsiga ugu muhiimsan ee badeecada

1. Qalabka elektarooniga ah ee korontada ku shaqeeya:

Mosfets: Waxaa loo isticmaalaa gawaarida korontada ku shaqeeya, darawallada matoorada warshadaha iyo qalabka wax lagu beddelo.

Diodes: sida diodes-ka Schottky (SBD), oo loo isticmaalo sixitaan hufan iyo beddelka sahayda korontada.

2. Qalabka Rf:

Amplifier awood Rf ah: waxaa loo isticmaalaa saldhigyada isgaarsiinta 5G iyo isgaarsiinta dayax-gacmeedka.

Aaladaha Microwave-ka: Ku habboon nidaamyada isgaarsiinta radar iyo wireless-ka.

3. Gawaarida tamarta cusub:

Nidaamyada wadista korontada: kontaroolayaasha matoorka iyo kuwa beddela gawaarida korontada ku shaqeeya.

Tuubada dallacaadda: Module koronto oo loogu talagalay qalabka dallacaadda degdegga ah.

4. Codsiyada warshadaha:

Koronto-beddele sare: loogu talagalay xakamaynta matoorka warshadaha iyo maaraynta tamarta.

Shabakadda casriga ah: Loogu talagalay transformers-ka gudbinta HVDC iyo korontada.

5. Hawada Sare:

Elektarooniga heerkulka sare leh: ku habboon jawiga heerkulka sare ee qalabka hawada sare.

6. Goobta cilmi-baarista:

Cilmi-baarista semiconductor-ka ee baaxadda ballaaran: si loo horumariyo agabka iyo aaladaha semiconductor-ka cusub.

Substrate-ka silicon carbide ee 12-inji ah waa nooc ka mid ah walxaha semiconductor-ka ee waxqabadka sare leh oo leh astaamo aad u fiican sida kulaylka sare, xoogga goobta burburka sare iyo farqiga ballaaran ee band. Waxaa si weyn loogu isticmaalaa qalabka elektaroonigga korontada, aaladaha raadiyaha, gawaarida tamarta cusub, xakamaynta warshadaha iyo hawada sare, waana agab muhiim ah oo lagu horumarinayo horumarinta jiilka xiga ee aaladaha elektaroonigga ah ee hufan oo awoodda sare leh.

In kasta oo walxaha silicon carbide-ka hadda ay leeyihiin codsiyo toos ah oo yar oo ku saabsan qalabka elektaroonigga macaamiisha sida muraayadaha AR, haddana kartidooda maaraynta awoodda wax ku oolka ah iyo qalabka elektaroonigga ah ee yar yar ayaa taageeri kara xalalka korontada ee fudud, waxqabadka sare leh ee aaladaha AR/VR ee mustaqbalka. Waqtigan xaadirka ah, horumarinta ugu weyn ee walxaha silicon carbide-ka waxaa lagu ururiyaa goobaha warshadaha sida gawaarida tamarta cusub, kaabayaasha isgaarsiinta iyo otomaatiga warshadaha, waxayna kor u qaadaysaa warshadaha semiconductor-ka si ay u horumaraan jiho waxtar badan oo la isku halleyn karo.

XKH waxay ka go'an tahay inay bixiso 12 "SIC substrates tayo sare leh oo leh taageero farsamo iyo adeegyo dhammaystiran, oo ay ku jiraan:

1. Wax soo saarka loo habeeyey: Sida laga soo xigtay baahiyaha macaamiisha si ay u bixiyaan iska caabin kala duwan, jihada crystal iyo substrate daaweynta dusha sare.

2. Hagaajinta habka: Sii macaamiisha taageero farsamo oo ku saabsan kobaca epitaxial, soo saarista qalabka iyo habab kale si loo horumariyo waxqabadka badeecada.

3. Tijaabinta iyo shahaadada: Bixi ogaanshaha cilladaha adag iyo shahaadada tayada si loo hubiyo in substrate-ku uu buuxiyo heerarka warshadaha.

4. Iskaashiga R&D: Si wadajir ah ula samee macaamiisha aaladaha cusub ee silicon carbide si kor loogu qaado hal-abuurka teknolojiyadda.

Shaxda xogta

1 2 inji oo Silicon Carbide (SiC) ah oo qeexitaan ah
Fasal		Soosaarka ZeroMPD Darajada (Darajada Z)	Waxsoosaarka Caadiga ah Darajada (Darajada P)		Fasalka Madow (D Darajada)
Dhexroorka		30 0 mm ~ 305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Jihaynta Wafer-ka		Dhidibka ka baxsan: 4.0° dhanka <1120 >±0.5° ee 4H-N, Dhidibka saaran: <0001>±0.5° ee 4H-SI
Cufnaanta Tuubooyinka Yaryar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Iska caabin	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Jihada Fidsan ee Aasaasiga ah		{10-10} ±5.0°
Dhererka Fidsan ee Aasaasiga ah	4H-N	Lama Helin
	4H-SI	Qaylo-dhaan
Ka-saarista Cidhifka		3 mm
LTV/TTV/Qaanso/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Boolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Kaarboonka Muuqaalka ah Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro			Dhererka wadarta ≤ 20 mm, dherer hal ah ≤ 2 mm Aagga wadarta ah ≤0.1% Aagga wadajirka ah≤3% Aagga wadarta ah ≤3% Dhererka wadarta ≤1 × dhexroorka wafer
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh		Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm			7 la oggol yahay, ≤1 mm midkiiba
(TSD) Kala-baxa boolal-xidhka		≤500 cm-2		Lama Helin
(BPD) Kala-baxa saldhigga diyaaradda		≤1000 cm-2		Lama Helin
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro
Baakad		Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah
Qoraalo:
1 Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. 2 Xoqashada waa in lagu hubiyaa wejiga Si oo keliya. 3 Xogta kala-baxa waxay ka timid oo keliya wafers-ka KOH ee la xardhay.

XKH waxay sii wadi doontaa inay maalgashato cilmi-baarista iyo horumarinta si kor loogu qaado horumarka substrate-ka carbide-ka silicon ee 12-inji ah ee cabbirka weyn, cilladaha hooseeya iyo joogteynta sare, halka XKH ay sahaminayso adeegsigeeda meelaha soo koraya sida qalabka elektaroonigga ah ee macaamiisha (sida modules-ka awoodda ee aaladaha AR/VR) iyo xisaabinta quantum. Iyada oo la dhimayo kharashyada iyo kordhinta awoodda, XKH waxay barwaaqo u keeni doontaa warshadaha semiconductor-ka.