12 inji SiC Substrate N Nooca Cabbir weyn Codsiyada RF ee Waxqabadka Sare leh

Sharaxaad Gaaban:

Substrate-ka 12-inji ah ee SiC wuxuu matalaa horumar horumar leh oo ku saabsan teknoolojiyadda walxaha semiconductor-ka, isagoo bixinaya faa'iidooyin isbeddel ah oo loogu talagalay elektaroonigga korontada iyo codsiyada soo noqnoqda sare leh. Maadaama uu yahay qaabka ugu weyn ee warshadaha ee laga heli karo silicon carbide wafer, substrate-ka 12-inji ah ee SiC wuxuu awood u siinayaa dhaqaal aan hore loo arag oo baaxad leh iyadoo la ilaalinayo faa'iidooyinka asalka ah ee walxaha ee sifooyinka bandgap ballaaran iyo sifooyinka kulaylka ee gaarka ah. Marka la barbardhigo buskudka SiC ee caadiga ah ee 6-inji ama ka yar, madal 12-inji ah waxay bixisaa in ka badan 300% aag la isticmaali karo halkii buskud, taasoo si weyn u kordhinaysa wax soo saarka dhimasha iyo yaraynta kharashyada wax soo saarka ee aaladaha korontada. Kala-guurka cabbirkan wuxuu muujinayaa horumarka taariikhiga ah ee buskudka silicon, halkaas oo koror kasta oo dhexroor ah uu keenay hoos u dhac weyn oo kharash ah iyo horumarin waxqabadka. Qaboojinta kulaylka sare ee substrate-ka 12-inji ee SiC (ku dhawaad 3× kan silicon) iyo xoogga goobta burburka muhiimka ah ee muhiimka ah ayaa ka dhigaya mid si gaar ah qiimo u leh nidaamyada baabuurta korontada ee jiilka xiga ee 800V, halkaas oo ay awood u siinayso modules awood oo isku dhafan oo hufan. Kaabayaasha 5G, xawaaraha sare ee buuxinta elektaroonigga ah ee agabka wuxuu u oggolaanayaa aaladaha RF inay ku shaqeeyaan mawjado sare oo leh khasaaro hoose. Iswaafajinta substrate-ka ee qalabka wax soo saarka silicon ee wax laga beddelay ayaa sidoo kale sahlaysa in si habsami leh loo qaato dharka hadda jira, inkastoo loo baahan yahay in si gaar ah loo maareeyo sababtoo ah adkaanta xad dhaafka ah ee SiC (9.5 Mohs). Marka mugga wax soo saarku kordho, substrate-ka 12-inji ah ee SiC ayaa la filayaa inuu noqdo heerka warshadaha ee codsiyada awoodda sare leh, taasoo horseedaysa hal-abuurka dhammaan nidaamyada baabuurta, tamarta la cusboonaysiin karo, iyo nidaamyada beddelka awoodda warshadaha.

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Astaamaha

Xuduudaha farsamada

Qeexitaanka Substrate-ka Silicon Carbide (SiC) ee 12 inji ah
Fasal		Soosaarka ZeroMPD Darajada (Darajada Z)	Waxsoosaarka Caadiga ah Darajada (Darajada P)		Fasalka Madow (D Darajada)
Dhexroorka		3 0 0 mm ~ 1305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Jihaynta Wafer-ka		Dhidibka ka baxsan: 4.0° dhanka <1120 >±0.5° ee 4H-N, Dhidibka saaran: <0001>±0.5° ee 4H-SI
Cufnaanta Tuubooyinka Yaryar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Iska caabin	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Jihada Fidsan ee Aasaasiga ah		{10-10} ±5.0°
Dhererka Fidsan ee Aasaasiga ah	4H-N	Lama Helin
	4H-SI	Qaylo-dhaan
Ka-saarista Cidhifka		3 mm
LTV/TTV/Qaanso/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Boolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Kaarboonka Muuqaalka ah Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro			Dhererka wadarta ≤ 20 mm, dherer hal ah ≤ 2 mm Aagga wadarta ah ≤0.1% Aagga wadajirka ah≤3% Aagga wadarta ah ≤3% Dhererka wadarta ≤1 × dhexroorka wafer
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh		Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm			7 la oggol yahay, ≤1 mm midkiiba
(TSD) Kala-baxa boolal-xidhka		≤500 cm-2		Lama Helin
(BPD) Kala-baxa saldhigga diyaaradda		≤1000 cm-2		Lama Helin
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro
Baakad		Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah
Qoraalo:
1 Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. 2 Xoqashada waa in lagu hubiyaa wejiga Si oo keliya. 3 Xogta kala-baxa waxay ka timid oo keliya wafers-ka KOH ee la xardhay.

Astaamaha Muhiimka ah

1. Faa'iidada Cabbirka Weyn: Substrate-ka 12-inji ah ee SiC (substrate silicon carbide 12-inji ah) wuxuu bixiyaa aag weyn oo hal-wafer ah, taasoo suurtogalinaysa in jajabyo badan la soo saaro halkii wafer, taasoo yareynaysa kharashyada wax soo saarka iyo kordhinta wax soo saarka.
2. Maaddada Waxqabadka Sare: Iska caabbinta heerkulka sare iyo xoogga goobta burburka sare ee Silicon carbide waxay ka dhigaysaa substrate-ka 12-inji ah mid ku habboon codsiyada danab sare iyo kuwa soo noqnoqda sare, sida EV inverters iyo nidaamyada dallacaadda degdegga ah.
3. Iswaafajinta Habaynta: Iyadoo ay jiraan caqabado adag iyo habayn sare oo SiC ah, substrate-ka 12-inji ah ee SiC wuxuu gaaraa cillado dusha sare ah oo hooseeya iyada oo loo marayo farsamooyinka jarista iyo nadiifinta ee la hagaajiyay, taasoo hagaajinaysa wax soo saarka qalabka.
4. Maareynta Kulaylka Sare: Iyada oo leh hab-dhaqan kuleyl oo ka wanaagsan agabka ku salaysan silicon, substrate-ka 12-inji ah wuxuu si wax ku ool ah wax uga qabtaa kala-baxa kulaylka ee aaladaha awoodda sare leh, isagoo dheereynaya cimriga qalabka.

Codsiyada ugu Muhiimsan

1. Gawaarida Korontada: Substrate-ka 12-inji ah ee SiC (substrate silicon carbide 12-inji ah) waa qayb muhiim ah oo ka mid ah nidaamyada wadista korantada ee jiilka soo socda, taasoo awood u siinaysa inverters-yada waxtarka sare leh ee kor u qaada baaxadda oo yareeya waqtiga dallacaadda.

2. Saldhigyada Saldhigga 5G: Substrates-ka SiC ee cabbirka weyn leh waxay taageeraan aaladaha RF ee soo noqnoqda sare leh, iyagoo daboolaya baahiyaha saldhigyada saldhigga 5G ee awoodda sare iyo khasaaraha hooseeya.

3. Sahayda Korontada Warshadaha: Qalabka korontada ku shaqeeya ee qoraxda iyo shabakadaha casriga ah, substrate-ka 12-inji ah wuxuu u adkeysan karaa danab sare isagoo yareynaya khasaaraha tamarta.

4. Elektarooniga Macaamiisha: Dareeraha degdega ah ee mustaqbalka iyo sahayda korontada ee xarunta xogta ayaa laga yaabaa inay qaataan substrates 12-inch SiC ah si loo gaaro cabbir yar iyo hufnaan sare.

Adeegyada XKH

Waxaan ku takhasusnay adeegyada habaynta ee loo habeeyay substrates-ka SiC ee 12-inji ah (substrates-ka silicon carbide ee 12-inji ah), oo ay ku jiraan:
1. Laalaabidda & Nadiifinta: Waxyeello yar, habayn heer sare ah oo loogu talagalay shuruudaha macaamiisha, taasoo hubinaysa waxqabadka qalabka oo deggan.
2. Taageerada Kobaca Epitaxial: Adeegyada wafer-ka epitaxial tayo sare leh si loo dedejiyo soo saarista jajabka.
3. Samaynta Dufcad yar: Waxay taageertaa xaqiijinta cilmi-baarista iyo horumarinta ee hay'adaha cilmi-baarista iyo shirkadaha, iyadoo gaabinaysa wareegyada horumarinta.
4. La-talin Farsamo: Xalalka dhammaadka ilaa dhammaadka laga bilaabo xulashada agabka ilaa hagaajinta habka, iyadoo ka caawinaysa macaamiisha inay ka gudbaan caqabadaha habaynta SiC.
Hadday tahay wax soo saar ballaaran ama habayn gaar ah, adeegyadayada substrate-ka SiC ee 12-inji ah waxay la jaan qaadayaan baahiyaha mashruucaaga, iyagoo awood siinaya horumarka tignoolajiyada.